MOS Interface Physics, Process and Characterization

Shengkai Wang (u. a.)

ISBN 10: 103210628X / ISBN 13: 9781032106281

Verlag: CRC Press, 2024

MOS Interface Physics, Process and Characterization | Shengkai Wang (u. a.) | Taschenbuch | Einband - flex.(Paperback) | Englisch | 2024 | CRC Press | EAN 9781032106281 | Verantwortliche Person für die EU: Libri GmbH, Europaallee 1, 36244 Bad Hersfeld, gpsr[at]libri[dot]de | Anbieter: preigu Print on Demand. Bestandsnummer des Verkäufers 128484426

Inhaltsangabe:

The electronic device based on Metal Oxide Semiconductor (MOS) structure is the most important component of a large-scale integrated circuit and the key to achieving high performance devices. This book contains experimental examples focusing on MOS and will be a reference for academics and postgraduates in the field of microelectronics.

Über die Autorin bzw. den Autor:

Shengkai Wang is a professor in the Institute of Microelectronics, Chinese Academy of Sciences. He received Ph.D. from the University of Tokyo in 2011 and has been engaged in Ge, III-V, SiC in MOS technology. He has published more than 100 papers and authorized 40+ patents.

Xiaolei Wang is a professor in the Institute of Microelectronics, Chinese Academy of Sciences. He received Ph.D. from the Institute of Microelectronics, Chinese Academy of Sciences in 2013 and has been engaged in Si/Ge based MOS technology. He has published more than 100 papers.

Bibliografische Details

Titel: MOS Interface Physics, Process and ...
Verlag: CRC Press
Erscheinungsdatum: 2024
Einband: Taschenbuch
Zustand: Neu