Methods of Measurement for Semiconductor Materials, Process Control, and Devices : Quarterly Report, October 1 to December 31, 1968 (Classic Reprint)

W. Murray Bullis

ISBN 10: 0428804152 / ISBN 13: 9780428804152

Verlag: Forgotten Books, 2018

Beschreibung

Zustand: Sehr gut | Sprache: Englisch | Produktart: Bücher.

Bestandsnummer des Verkäufers 30889318/2

Bibliografische Details

• Titel: Methods of Measurement for Semiconductor Materials, Process Control, and Devices : Quarterly Report, October 1 to December 31, 1968 (Classic Reprint)
• Verlag: Forgotten Books
• Erscheinungsjahr: 2018
• Sprache: Englisch
• ISBN-10: 0428804152
• ISBN-13: 9780428804152
• Einband: Hardcover
• Zustand: Sehr gut

Über diesen Titel

Inhaltsangabe

Excerpt from Methods of Measurement for Semiconductor Materials, Process Control, and Devices: Quarterly Report, October 1 to December 31, 1968

The objective of the task on Infrared Methods has been broadened to include work on detection of certain impurities in silicon and germanium by infrared absorption. This work is in support of American Society for Testing and Materials Committee F - l on Materials for Electron Devices and Microelectronics which is developing standards for such measurements.

Efforts on the task on Wire Bond Evaluation have been substantially increased during this quarter. The tasks on Metallization Evaluation and Die Attachment Evaluation were established, in part, because of the importance of the overall bond failure problem. Program staff members participated in several briefings related to various aspects of this problem and Dr. J. A. Coleman attended the fact-finding Conference on Radiation Effects in Semiconductor Devices (sponsored by the Defense Electronics Supply Center) at General Electric, Syracuse, New York, on November 19, 1968 and the Symposium on Transient Radiation Effects and Techniques for Circuit Hardening (sponsored by the Defense Atomic Sup port Agency) at the Naval Research Laboratory, Washington, D. C on December 9 - 13, 1968.

Considerable committee work was carried on during this period in addition to items specifically mentioned in connection with various tasks. Although there were no meetings of astm Committee F-l, four documents were reviewed editorially for the committee, six were reviewed editorially for various subcommittees, and four were reviewed informally. Revisions were prepared for both methods for determining crystallographic perfection of silicon by etching to extend the method to larger diameter crystals. A manuscript on Measurement Standards for Integrated Circuit Processing was prepared together with the chairman of astm Committee F-l for submission to a special issue of the Proceedings of'the ieee.

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