Microwave Field-Effect Transistors: Theory Design and Application

Pengelly, Raymond S.

ISBN 10: 1884932509 / ISBN 13: 9781884932502

Verlag: Noble Publishing, Atlanta, 1995

Beschreibung

No DJ.

Bestandsnummer des Verkäufers 279105

Bibliografische Details

• Titel: Microwave Field-Effect Transistors: Theory Design and Application
• Verlag: Noble Publishing, Atlanta
• Erscheinungsjahr: 1995
• Sprache: Englisch
• ISBN-10: 1884932509
• ISBN-13: 9781884932502
• Einband: Hardbound
• Zustand: Good
• Zustand des Schutzumschlags: No Dust Jacket

Über diesen Titel

Inhaltsangabe

This book covers the use of devices in microwave circuits and includes such topics as semiconductor theory and transistor performance, CAD considerations, intermodulation, noise figure, signal handling, S-parameter mapping, narrow- and broadband techniques, packaging and thermal considerations. Perhaps the most comprehensive text on GaAs FET technology and its practical application. It covers the use of MESFET devices in microwave circuits, such as low-noise amplifiers, mixers, oscillators, power amplifiers, switches and multipliers. This text is a classic reference for all engineers involved in the development of solid state microwave devices.