Nanostructure Physics and Fabrication: Proceedings of the International Symposium, College Station, Texas, March 13-15, 1989

Reed, Mark A.

ISBN 10: 012585000X / ISBN 13: 9780125850001

Verlag: St Louis, Missouri, U.S.A.: Academic Pr, 1989

Beschreibung

hardcover in near fine condition.

Bestandsnummer des Verkäufers 81093

Bibliografische Details

• Titel: Nanostructure Physics and Fabrication: Proceedings of the International Symposium, College Station, Texas, March 13-15, 1989
• Verlag: St Louis, Missouri, U.S.A.: Academic Pr
• Erscheinungsjahr: 1989
• Sprache: Englisch
• ISBN-10: 012585000X
• ISBN-13: 9780125850001
• Einband: Hardcover
• Zustand: Fine
• Verkäuferkataloge:
  • Science

Über diesen Titel

Inhaltsangabe

Nanostructure Physics and Fabrication contains the contributions of an interdisciplinary group of specialists in nanometer scale fabrication, physics of mesoscopic systems, electronic transport, and materials science brought together to discuss the current status of nanometer scale electronic structures. These articles provide the most current assessment of this active and growing area of interest. The introductory chapter provides comments and background material for those somewhat unfamiliar with this new area of research and serves as a condensed overview and summary of the contributions that follow.

Reseña del editor

Nanostructure Physics and Fabrication contains the contributions of an interdisciplinary group of specialists in nanometer scale fabrication, physics of mesoscopic systems, electronic transport, and materials science brought together to discuss the current status of nanometer scale electronic structures. These articles provide the most current assessment of this active and growing area of interest. The introductory chapter provides comments and background material for those somewhat unfamiliar with this new area of research and serves as a condensed overview and summary of the contributions that follow.

• Most current assessment of the field
• Articles by experts in the field
• Results presented here will impact the future of microelectronics