Operation and Modeling of the MOS Transistor

Tsividis, Yannis

ISBN 10: 0195170148 / ISBN 13: 9780195170146

Verlag: Oxford University Press, NY, 1999

A nice, bright copy. ; 9.8 X 7.6 X 1.5 inches; 620 pages. Bestandsnummer des Verkäufers 278905

Inhaltsangabe:

Extensively revised and updated, this, the second edition of the highly praised textOperation and Modeling of The MOS Transistor, has become a standard in academia and industry. The book provides a thorough treatment of the MOS transistor-the key element of most modern microelectronic chips.

KEY FEATURES


·Unified, careful treatment. The book covers in depth the development of many important models, ranging from the simple to the sophisticated, with the connection between models clearly identified. Many aspects of modeling are covered, including: dc, ac, small-signal, large-signal transient, quasi-static, nonquasi-static, and noise.


·Expanded coverage. New material is included on a number of topics, including charge sheet models, small-dimension effects, noise, and modeling for RF applications.


·New chapter on modeling for CAD. A completely new chapter discusses the context, considerations, and pitfalls associated with the development of models for computer-aided design, and describes ways to evaluate them.


·Extensive Bibliography. A thoroughly updated, greatly expanded bibliography is provided.

Bibliografische Details

Titel: Operation and Modeling of the MOS Transistor
Verlag: Oxford University Press, NY
Erscheinungsdatum: 1999
Einband: Hardcover
Zustand: Near Fine
Zustand des Schutzumschlags: No Dust Jacket
Auflage: Second Edition.