STRUCTURE AND ELECTRONIC PROPERTIES OF ULTRATHIN DIELECTRIC FILMS ON SILICON AND RELATED STRUCTURES

D. A. BUCHANAN, IBM T J WATSON RESEARCH CENTER, NEW YORKARTHUR H. EDWARDS, AIR FORCE RESEARCH LABORATORY, U.S.A.H. J. VON BARDELEBEN, UNIVERSITÃ DE PARIS VI (PIERRE ET MARIE CURIE)T. HATTORI, MUSASHI INSTITUTE OF TECHNOLOGY, JAPAN

ISBN 10: 1558995005 / ISBN 13: 9781558995000

Verlag: Cambridge University Press, 2000

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Inhaltsangabe:

The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. This volume was first published in 2000.

Reseña del editor: With the ever-decreasing dimension, laterally and vertically, in CMOS and DRAM technology, the understanding of thin insulators and their interfaces with silicon have become of critical importance. As a result of this scaling of semiconductor devices, an increased interest from industrial, government, and university laboratories has become evident in this field of study. The book, first published in 2000, includes detailed theoretical studies of the nature of SiO2 and its interface with silicon, electron paramagnetic resonance for the study of defects, electron tunneling, and band alignment among others. There are also studies developing new techniques and advancing our understanding of these dielectrics and interfaces, including addressing the issue of dielectric breakdown. Aside from the work addressing SiO2, there are a number of papers regarding the application of the so-called 'high-k' dielectrics. The high-k materials addressed in the volume include such films as Ta2O5, HfO2, Bi2Ti2O7, CeO2, and ZrO2.

Bibliografische Details

Titel: STRUCTURE AND ELECTRONIC PROPERTIES OF ...
Verlag: Cambridge University Press
Erscheinungsdatum: 2000
Einband: Hardcover
Zustand: Brand New