Brand New, Unread Copy in Perfect Condition. A+ Customer Service! Summary: Preface Chapter 1 Epitaxial growth of high-quality silicon carbide - Fundamentals and recent progress - -- T. Kimoto and H. Matsunami* (Kyoto University) (1) Introduction (2) Step-controlled Epitaxy of SiC 2.1 Chemical vapor deposition 2.2 Step-controlled epitaxy 2.3 Surface morphology (3) Growth mechanism of step-controlled epitaxy 3.1 Rate-determining process 3.2 Off-angle dependence of growth rate 3.3 Temperature dependence of growth rate 3.4 Prediction of step-flow growth condition 3.4.1 Surface diffusion model 3.4.2 Desorption flux 3.4.3 Critical supersaturation ratio 3.4.4 Critical growth conditions 3.4.5 Surface diffusion length 3.4.6 Prediction of growth mode (4) Behaviors of steps in SiC epitaxy 4.1 Nucleation and step motion 4.2 Step bunching (5) Characterization of epitaxial layers 5.1 Structural characterization 5.2 Optical characterization 5.3 Electrical characterization (6) Doping of impurities 6.1 Donor doping 6.2 Acceptor doping (7) Recent progress 7.1 Practical epitaxial growth 7.2 Epitaxial growth on (11-20) (8) Concludions References Chapter 2 Surface characterization of 6H-SiC reconstructions -- Kian-Ping LOH, Eng-Soon TOK, and Andrew T. S. WEE* (National University of Singapore) 1. INTRODUCTION 2. Sample preparation methods for characterization of surface reconstruction 3. Reflection High Energy Electron Diffraction (RHEED) 3.1 RHEED system set-up 3.2 RHEED analysis of surface reconstruction on 6H-SiC (0001) 3.3 6H-SiC (0001)-(11) reconstruction 3.4 6H-SiC (0001)-(33) reconstruction 3.5 6H-SiC(0001)-(66) reconstruction 3.6 6H-SiC(0001)-(33R ) reconstruction 3.7 11 graphite-R on 11 SiC 3.8 RHEED Rocking beam analysis 4. Scanning Tunneling Microscopy (STM) 4.1 Surface Morphological Evolution of 6H-SiC(0001) 4.2 6H-SiC (0001)-(33) reconstruction 4.3 6H-SiC (0001)-(66) reconstruction 5. X-ray Photoelectron Spectroscopy (XPS) 6. Auger electron spectroscopy (AES) 7. Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS) 8. Conclusions Acknowledgements References Chap ter 3 Exciton and defect photoluminescence from SiC -- T. Egilsson, I.G. Ivanov, N.T. Son, A. Henry, J.P. Bergman, and E. Janzn* (Linkping University) 1. Introduction 2. Experimental techniques 3. Some properties of sic 4. Electronic structure 4.1. Excitons 4.2. Internal transitions at impurity ions 5. Free excitons 6. Bound excitons 6.1. D-and A-BEs 6.2. I-BEs 7. Internal transitions References Chapter 4 DEEP LEVEL DEFECTS IN SiC MATERIALS AND DEVICES -- A. A. Lebedev* (A. F. Ioffe Physics & Technology Institute) Introduction. 1. Parameters of deep centers in SiC. 1.1. Major doping impurities in SiC 1.2. Other types of impurity centers in SiC 1.3. Intrinsic defects in silicon carbide 1.4. Radiation doping of SiC 2. Influence of impurities on the growth of epitaxial SiC layers 2.1. Heteropolytype SiC epitaxy 2.2. Site-competition epitaxy of SiC 3. Deep centers and recombination processes in SiC. 3.1. A deep centers and radiates recombination in 6H- and 4H-SiC p-n structures. 3.2. Influence of deep centers on the diffusion length and lifetime in 6H-SiC p-n structures 3.3. Deep centers and the negative temperature coefficient for the breakdown voltage in SiC p-n-structures Conclusions References Chapter 5 Ion-implantation in SiC -- Mulpuri V. Rao (George Mason University) (1) Introduction (2) Implant Profile Range Statistics (3) Surface Morphology of Annealed Material (4) Thermal Stability of Implant Depth Profiles (5) Lattice Quality - Rutherford Back-scattering (RBS) (6) Electrical Activation of Donor Implants (7) Electrical Activation of Acceptor Implants (. Buchnummer des Verkäufers
Inhaltsangabe: This book will provide useful information to material growers and evaluators, device design and processing engineers as well as potential users of SiC technologies. This book will help identify remaining challenging issues to stimulate further investigation to realize the full potential of wide band gap SiC for optoelectronic and microelectronic applications.
Über den Autor:
Dr. Zhe Chuan Feng received his Ph.D. from the University of Pittsburgh. He has worked both within academia and industry on semiconductor growth, process, characterization, semiconductor devices, and lasers. He is currently a Senior Research Scientist at the School of Electrical & Computer Engineering at the Georgia Institute of Technology, focusing on widegap III-Nitrides, SiC and other compound semiconductors.
Dr. Jian H. Zhao received his Ph.D. in Electrical Engineering from Carnegie Mellon University in 1988 and joined Rutgers University in the same year. He is Professor and Director of SiCLAB and his research results have been summarized in more than 110 refereed papers and over 140 conference papers and presentations, as well as four book chapters and a book titled Optical Filter Design and Analysis: A Signal Processing Approach. He holds five patents.
Buchbeschreibung CRC Press. Hardcover. Buchzustand: Very Good. Buchnummer des Verkäufers HBS-00075812-B
Buchbeschreibung CRC Press, 2003. Hardcover. Buchzustand: New. 1. Buchnummer des Verkäufers DADAX1591690234
Buchbeschreibung CRC Press, 2003. HRD. Buchzustand: New. New Book. Shipped from UK in 4 to 14 days. Established seller since 2000. Buchnummer des Verkäufers F9-9781591690238
Buchbeschreibung CRC Press, 2003. Hardcover. Buchzustand: New. book. Buchnummer des Verkäufers 1591690234
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Buchbeschreibung CRC Press, 2017. Hardback. Buchzustand: NEW. 9781591690238 This listing is a new book, a title currently in-print which we order directly and immediately from the publisher. Print on Demand title, produced to the highest standard, and there would be a delay in dispatch of around 10 working days. Buchnummer des Verkäufers HTANDREE0251832
Buchbeschreibung 2003. Hardcover. Buchzustand: New. 1st. 152mm x 229mm x 237mm. Hardcover. This book will provide useful information to material growers and evaluators, device design and processing engineers as well as potential users of SiC technologies. This book will help ide.Shipping may be from multiple locations in the US or from the UK, depending on stock availability. 416 pages. 0.703. Buchnummer des Verkäufers 9781591690238
Buchbeschreibung 2003. Hardcover. Buchzustand: New. 1st. 152mm x 229mm x 237mm. Hardcover. This book will provide useful information to material growers and evaluators, device design and processing engineers as well as potential users of SiC technologies. This book .Shipping may be from our Sydney, NSW warehouse or from our UK or US warehouse, depending on stock availability. 416 pages. 0.703. Buchnummer des Verkäufers 9781591690238
Buchbeschreibung Taylor and Francis, 2003. HRD. Buchzustand: New. New Book. Shipped from US within 10 to 14 business days. Established seller since 2000. Buchnummer des Verkäufers VT-9781591690238
Buchbeschreibung Routledge, 2003. Hardcover. Buchzustand: Brand New. 1st edition. 416 pages. 9.00x6.25x1.00 inches. In Stock. Buchnummer des Verkäufers __1591690234