Silicon Devices and Process Integration

Badih El-Kareh

ISBN 10: 0387367985 / ISBN 13: 9780387367989

Verlag: Springer, 2009

Beschreibung

pp. 624.

Bestandsnummer des Verkäufers 26438425

Bibliografische Details

• Titel: Silicon Devices and Process Integration
• Verlag: Springer
• Erscheinungsjahr: 2009
• Sprache: Englisch
• ISBN-10: 0387367985
• ISBN-13: 9780387367989
• Einband: Hardcover
• Zustand: New

Über diesen Titel

Inhaltsangabe

Silicon Devices and Process Integration covers state-of-the-art silicon devices, their characteristics, and their interactions with process parameters. It serves as a comprehensive guide which addresses both the theoretical and practical aspects of modern silicon devices and the relationship between their electrical properties and processing conditions. The book is compiled from the author's industrial and academic lecture notes and reflects years of experience in the development of silicon devices.

Features include:

• A review of silicon properties which provides a foundation for understanding the device properties discussion, including mobility-enhancement by straining silicon;
• State-of-the-art technologies on high-K gate dielectrics, low-K dielectrics, Cu interconnects, and SiGe BiCMOS;
• CMOS-only applications, such as subthreshold current and parasitic latch-up;
• Advanced Enabling processes and process integration.

This book is written for engineers and scientists in semiconductor research, development and manufacturing. The problems at the end of each chapter and the numerous charts, figures and tables also make it appropriate for use as a text in graduate and advanced undergraduate courses in electrical engineering and materials science.

Von der hinteren Coverseite

Silicon Devices and Process Integration is compiled from industrial and academic lecture notes and reflects years of experience in the development of silicon devices. It is prepared specifically for engineers and scientists in semiconductor research, development and manufacturing. It is also suitable for a one-semester course in electrical engineering and materials science at the upper undergraduate or lower graduate level. The book covers both the theoretical and practical aspects of modern silicon devices and the relationship between their electrical properties and processing conditions.

Topics covered include: MOS structure, parameter extraction - Short and narrow-channel effects - CMOS mobility enhancement techniques - High-K gate dielectrics, advanced gate stacks - Low-K dielectrics and Cu interconnects - Analog devices and passive components - CMOS and BiCMOS process integration - DRAM, SRAM and NVM cell structures.

The book covers state-of-the-art silicon devices and integrated process technologies. It represents a comprehensive discussion of modern silicon devices, their characteristics, and interactions with process parameters.