Silicon Devices and Process Integration

El-Kareh Badih

ISBN 10: 1441942246 / ISBN 13: 9781441942241

Verlag: Springer, 2010

Beschreibung

Print on Demand pp. 624 49:B&W 6.14 x 9.21 in or 234 x 156 mm (Royal 8vo) Perfect Bound on White w/Gloss Lam.

Bestandsnummer des Verkäufers 5863191

Bibliografische Details

• Titel: Silicon Devices and Process Integration
• Verlag: Springer
• Erscheinungsjahr: 2010
• Sprache: Englisch
• ISBN-10: 1441942246
• ISBN-13: 9781441942241
• Einband: Softcover
• Zustand: New

Über diesen Titel

Inhaltsangabe

This book includes discussion of silicon materials and electrical engineering properties as used in the design of analog components. Due to the author's background at Texas Instruments, the book will have an emphasis on newer process integration techniques and technology to help professional engineers in the field understand and develop electrical components.

Von der hinteren Coverseite

Silicon Devices and Process Integration is compiled from industrial and academic lecture notes and reflects years of experience in the development of silicon devices. It is prepared specifically for engineers and scientists in semiconductor research, development and manufacturing. It is also suitable for a one-semester course in electrical engineering and materials science at the upper undergraduate or lower graduate level. The book covers both the theoretical and practical aspects of modern silicon devices and the relationship between their electrical properties and processing conditions.

Topics covered include: MOS structure, parameter extraction - Short and narrow-channel effects - CMOS mobility enhancement techniques - High-K gate dielectrics, advanced gate stacks - Low-K dielectrics and Cu interconnects - Analog devices and passive components - CMOS and BiCMOS process integration - DRAM, SRAM and NVM cell structures.

The book covers state-of-the-art silicon devices and integrated process technologies. It represents a comprehensive discussion of modern silicon devices, their characteristics, and interactions with process parameters.