Simulation of Semiconductor Devices and Processes: Volume 6 (Simulation of Semiconductor Devices & Processes)

ISBN 10: 3211827366 / ISBN 13: 9783211827369

Verlag: Springer, 1995

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Bibliografische Details

• Titel: Simulation of Semiconductor Devices and Processes: Volume 6 (Simulation of Semiconductor Devices & Processes)
• Verlag: Springer
• Erscheinungsjahr: 1995
• Sprache: Englisch
• ISBN-10: 3211827366
• ISBN-13: 9783211827369
• Einband: Hardcover
• Zustand: New

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Inhaltsangabe

Numerical Modelling and Materials Characterisation for Integrated Micro Electro Mechanical Systems.- Fast and Accurate Aerial Imaging Simulation for Layout Printability Optimization.- Efficient and Rigorous 3D Model for Optical Lithography Simulation.- Application of the Two-dimensional Numerical Simulation for the Description of Semiconductor Gas Sensors.- Analysis of Piezoresistive Effects in Silicon Structures Using Multidimensional Process and Device Simulation.- Modeling of Magnetic-Field-Sensitive GaAs Devices Using 3D Monte Carlo Simulation.- Quasi Three-Dimensional Simulation of Heat Transport in Thermal-Based Microsensors.- Simulating Deep Sub-Micron Technologies: An Industrial Perspective.- An Improved Calibration Methodology for Modeling Advanced Isolation Technologies.- Algorithms for the Reduction of Surface Evolution Discretization Error.- Polygonal Geometry Reconstruction after Cellular Etching or Deposition Simulation.- A Data-Model for a Technology and Simulation Archive.- A Programmable Tool for Interactive Wafer-State Level Data Processing.- Layout Design Rule Generation with TCAD Tools for Manufacturing.- ALAMODE: A Layered Model Development Environment.- TCAD Optimization Based on Task-Level Framework Services.- Cellular Automata Simulation of GaAs-IMPATT-Diodes.- Two-Dimensional Simulation of Deep-Trap Effects in GaAs MESFETs with Different Types of Surface States.- An Efficient Numerical Method to Solve the Time-Dependent Semiconductor Equations Including Trapped Charge.- Advances in Numerical Methods for Convective Hydrodynamic Model of Semiconductor Devices.- An Advanced Cellular Automaton Method with Interpolated Flux Scheme and its Application to Modeling of Gate Currents in Si MOSFETs.- Piezoresistance and the Drift-Diffusion Model in Strained Silicon.- A Novel Approach to HF-Noise Characterization of Heterojunction Bipolar Transistors.- Ge Profile for Minimum Neutral Base Transit Time in Si/Si1-yGey Heteroj unction Bipolar Transistors.- Performance Optimization in Si/SiGe Heterostructure FETs.- On the Integral Representations of Electrical Characteristics in Si Devices.- Large Signal Frequency Domain Device Analysis Via the Harmonic Balance Technique.- A Method for Extracting the Threshold Voltage of MOSFETs Based on Current Components.- 2-D MOSFET Simulation by Self-Consistent Solution of the Boltzmann and Poisson Equations Using a Generalized Spherical Harmonic Expansion.- Ultra High Performance, Low Power 0.2 µm CMOS Microprocessor Technology and TCAD Requirements.- Viscoelastic Modeling of Titanium Silicidation.- Multidimensional Nonlinear Viscoelastic Oxidation Modeling.- Three-Dimensional Integrated Process Simulator: 3D-MIPS.- Effect of Process-Induced Mechanical Stress on Circuit Layout.- The Simulation System for Three-Dimensional Capacitance and Current Density Calculation with a User Friendly GUI.- Numerical and Analytical Modelling of Head Resistances of Diffused Resistors.- New Spreading Resistance Effect for Sub-0.50µm MOSFETs: Model and Simulation.- The Role of SEMATECH in Enabling Global TCAD Collaboration.- Three Dimensional Simulation for Sputter Deposition Equipment and Processes.- Comprehensive Reactor, Plasma, and Profile Simulator for Plasma Etch Processes.- Modeling the Wafer Temperature in a LPCVD Furnace.- Determination of Electronic States in Low Dimensional Heterostructure and Quantum Wire Devices.- An Exponentially Fitted Finite Element Scheme for Diffusion Process Simulation on Coarse Grids.- Achievement of Quantitatively Accurate Simulation of Ion-Irradiated Bipolar Power Devices.- Modeling of Substrate Bias Effect in Bulk and SOI SiGe-channel p-MOSFETs.- A Very Fast Three-Dimensional Impurity Profile Simulation Incorporating An Accumulated Diffusion Lenght and its Application to the Design of Power MOSFETs.- Recovery of Vectorial Fields and Currents in Multidimensional Simulation.- An Efficient Approach to Solving The Boltzmann Transport Equation in Ultra-fast Trans

Reseña del editor

SISDEP ’95 provides an international forum for the presentation of state-of-the-art research and development results in the area of numerical process and device simulation. Continuously shrinking device dimensions, the use of new materials, and advanced processing steps in the manufacturing of semiconductor devices require new and improved software. The trend towards increasing complexity in structures and process technology demands advanced models describing all basic effects and sophisticated two and three dimensional tools for almost arbitrarily designed geometries. The book contains the latest results obtained by scientists from more than 20 countries on process simulation and modeling, simulation of process equipment, device modeling and simulation of novel devices, power semiconductors, and sensors, on device simulation and parameter extraction for circuit models, practical application of simulation, numerical methods, and software.