Surface Engineering. Surface Modification of Materials. NATO ASI Series E Applied Science No. 85

Kossowsky, Ram, & Subhash C. Singhal, eds.

ISBN 10: 9024730937 / ISBN 13: 9789024730933

Verlag: Dordrecht:, 1984

Beschreibung

*Price HAS BEEN REDUCED by 10% until Monday, Sept. 8 (SALE item)* 764 pp., hardcover, ex library, but text and binding still clean, bright and tight, . - If you are reading this, this item is actually (physically) in our stock and ready for shipment once ordered. We are not bookjackers. Buyer is responsible for any additional duties, taxes, or fees required by recipient's country. Photos available upon request.

Bestandsnummer des Verkäufers ZB401397

Bibliografische Details

• Titel: Surface Engineering. Surface Modification of Materials. NATO ASI Series E Applied Science No. 85
• Verlag: Dordrecht:
• Erscheinungsjahr: 1984
• Sprache: Englisch
• ISBN-10: 9024730937
• ISBN-13: 9789024730933
• Einband: Hardcover
• Zustand: Good

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Inhaltsangabe

Over the last few years there has been increasing need for systematic and straregically designed experiments of surface morphology evolution resulting form ion bombardment induced sputtering. Although there is an impressive number of investi­ gations {1} concerned with semiconductor materials as a result of immediate applications, the most systematic investigations have been conducted with fcc metals with particular interest on single crystal Cu {2,3}. Evidence now exists that within certain para­ meters (i. e ion species (Ar+), ion energy (20-44 KeV), substrate 2 temperature (80-550° K), dose rate (100-500 gA cm- ) , residual x 5 9 pressure (5 10- to 5x10- mm Hg) and polar and azimuthal angle of ion incidence {4} reproducible surface morphology (etch pits and pyramids) is achieved on the (11 3 1) specific crystallographic orientation. The temporal development of individual surface features was alsoobserved in this laterstudy {4}, by employing an in situ ion source in the scanning electron microscope at Salford, a technique also empolyed in studies of the influence of polar angle of ion incidence {5} and surface contaminants {6} on the topographyof Ar+ bombarded Si. Studies have also been made on the variation of incident ion species with the (11 3 1) Cu surface and it was fully recognized {7} that residual surface contaminants when present could playa major role in dictating the morhological evolution.