Temperature Dependent modelling of Memristor

Mohit Kumar Saini

ISBN 10: 6139920728 / ISBN 13: 9786139920723

Verlag: LAP LAMBERT Academic Publishing, 2019

Beschreibung

nach der Bestellung gedruckt Neuware - Printed after ordering - Memristor is a new device and fast growing device in different application of VLSI circuit design. Logic circuit design is also having very large space for research. By redesigning certain types of circuits to include memristors, it is possible to obtain the same function with fewer components, making the circuit itself less expensive and significantly decreasing its power consumption. As the memory design and cross-bar architecture is also possible from memristor, one can implement the SRAM's and other memories using memristor which further reduce the power requirements and the area size. In regards to the temperature variation one can implement the more accurate methods to find the influence on various parameters. The memristor model can also be further developed including linear and non-linear models, for more accurate results.

Bestandsnummer des Verkäufers 9786139920723

Bibliografische Details

• Titel: Temperature Dependent modelling of Memristor
• Verlag: LAP LAMBERT Academic Publishing
• Erscheinungsjahr: 2019
• Sprache: Englisch
• ISBN-10: 6139920728
• ISBN-13: 9786139920723
• Einband: Taschenbuch
• Zustand: Neu
• Abmessungen: 220B x 150 H x 4 T Millimeter Breite: 220 mm, Höhe: 150 mm, Tiefe: 4 mm
• Gewicht: 96 Gramm

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Inhaltsangabe

Memristor is a new device and fast growing device in different application of VLSI circuit design. Logic circuit design is also having very large space for research. By redesigning certain types of circuits to include memristors, it is possible to obtain the same function with fewer components, making the circuit itself less expensive and significantly decreasing its power consumption. As the memory design and cross-bar architecture is also possible from memristor, one can implement the SRAM’s and other memories using memristor which further reduce the power requirements and the area size. In regards to the temperature variation one can implement the more accurate methods to find the influence on various parameters. The memristor model can also be further developed including linear and non-linear models, for more accurate results.