Wide Bandgap Semiconductors for Power Electronics. Dieser Artikel ist nicht verfügbar.
Sprache: Englisch
Verlag: Wiley-VCH Verlag GmbH, DE, 2021
- Hardcover
- Neu
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Artikelbeschreibung vom Verkäufer
Wide Bandgap Semiconductors for Power Electronic A guide to the field of wide bandgap semiconductor technology Wide Bandgap Semiconductors for Power Electronics is a comprehensive and authoritative guide to wide bandgap materials silicon carbide, gallium nitride, diamond and gallium(III) oxide. With contributions from an international panel of experts, the book offers detailed coverage of the growth of these materials, their characterization, and how they are used in a variety of power electronics devices such as transistors and diodes and in the areas of quantum information and hybrid electric vehicles. The book is filled with the most recent developments in the burgeoning field of wide bandgap semiconductor technology and includes information from cutting-edge semiconductor companies as well as material from leading universities and research institutions. By taking both scholarly and industrial perspectives, the book is designed to be a useful resource for scientists, academics, and corporate researchers and developers. This important book: Presents a review of wide bandgap materials and recent developmentsLinks the high potential of wide bandgap semiconductors with the technological implementation capabilitiesOffers a unique combination of academic and industrial perspectivesMeets the demand for a resource that addresses wide bandgap materials in a comprehensive manner Written for materials scientists, semiconductor physicists, electrical engineers, Wide Bandgap Semiconductors for Power Electronics provides a state of the art guide to the technology and application of SiC and related wide bandgap materials.
Bestandsnummer des Verkäufers LU-9783527346714
- Titel
- Wide Bandgap Semiconductors for Power Electronics
- Autor
- Peter Wellmann
- Verlag
- Wiley-VCH Verlag GmbH, DE
- Veröffentlichungsjahr
- 2021
- Zustand
- New
- Einband
- Hardback
- Sprache
- Englisch
- ISBN-10
- 3527346716
- ISBN-13
- 9783527346714
- Ausgabe
- 2 Volumes.
- Artikelgewicht
- 1.738 Gramm
The book gives a comprehensive overview the wide bandgap materials SiC, GaN, C (diamond) and Ga(III) oxide, covering in detail the growth of these materials, their characterization and their use in a variety of power electronics devices.
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Über die Autorin bzw. den Autor
Peter Wellmann is Professor at the University of Erlangen-Nuremberg, Germany, and Chair of the Department of Materials for Electronics and Energy Technology. After his PhD he was postdoctoral researcher at the Materials Department of the University of California Santa Barbara, USA. He did his habilitation in Erlangen in 2001 on the topic of vapor growth and characterization of silicon carbide. Peter Wellmann was Visiting Professor at the National Polytechnic Institute of Grenoble and at the University of Montpellier 2, France.
Noboru Ohtani is Professor at the School of Science and Technology and Director of the R&D Center for SiC Materials and Processes at Kwansei Gakuin University, Hyogo, Japan. He earned his PhD degree in 1993 from Imperial College London, UK. Prior to joining Kwansei Gakuin University, he worked at the Advanced Technology Research Laboratories of the Nippon Steel Corporation.
Roland Rupp is Senior Principal SiC Technology at Infineon AG in Munich, Germany, where he has built up and coordinated the development of SiC technology for power applications. He obtained his Diploma from the University of Erlangen-Nuremberg, and subsequently worked as Research Engineer at Stettner&Co. He then returned to university to obtain his PhD and afterwards worked as Development Engineer at Siemens AG for seven years before taking on his current position.
Noboru Ohtani is Professor at the School of Science and Technology and Director of the R&D Center for SiC Materials and Processes at Kwansei Gakuin University, Hyogo, Japan. He earned his PhD degree in 1993 from Imperial College London, UK. Prior to joining Kwansei Gakuin University, he worked at the Advanced Technology Research Laboratories of the Nippon Steel Corporation.
Roland Rupp is Senior Principal SiC Technology at Infineon AG in Munich, Germany, where he has built up and coordinated the development of SiC technology for power applications. He obtained his Diploma from the University of Erlangen-Nuremberg, and subsequently worked as Research Engineer at Stettner&Co. He then returned to university to obtain his PhD and afterwards worked as Development Engineer at Siemens AG for seven years before taking on his current position.
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