Verlag: J Applied Physics, 1965
Anbieter: Larry W Price Books, Portland, OR, USA
Pamphlet. Zustand: Very Good. Vol 36, No 11, pp. 3496-3502, Illus, 4to, Extracted from orig vol, thus begins with title page, trimmed & stapled pamphlet, else VGG.
Sprache: Englisch
Verlag: KTK Scientific Publishers, Tokyo, 1987
ISBN 10: 9027723524 ISBN 13: 9789027723529
Anbieter: Amnesty Bookshop, Malvern, Great Malvern, Vereinigtes Königreich
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In den WarenkorbHb without Dj. Zustand: Fine. First Edition. Contains nearly all the papers presented at the Symposium on "Defects and Qualities of Semiconductors" held in Tokyo in May 1984. In immaculate condition throughout. All profits to Amnesty International. Size: 15.5cm - 23.3cm with 261pp.
Anbieter: Books Puddle, New York, NY, USA
Zustand: New. pp. 300.
Anbieter: Majestic Books, Hounslow, Vereinigtes Königreich
EUR 75,49
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In den WarenkorbZustand: New. pp. 300 Illus.
Anbieter: Revaluation Books, Exeter, Vereinigtes Königreich
EUR 76,31
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In den WarenkorbPaperback. Zustand: Brand New. 180 pages. 9.61x6.69x0.41 inches. In Stock.
Anbieter: Biblios, Frankfurt am main, HESSE, Deutschland
Zustand: New. pp. 300.
Anbieter: Ria Christie Collections, Uxbridge, Vereinigtes Königreich
EUR 77,66
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In den WarenkorbZustand: New. In.
Sprache: Englisch
Verlag: D. Reidel Publishing Company, 2013
ISBN 10: 9401086168 ISBN 13: 9789401086165
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In den WarenkorbPaperback. Zustand: Brand New. 272 pages. 9.02x5.99x0.62 inches. In Stock.
Anbieter: preigu, Osnabrück, Deutschland
Taschenbuch. Zustand: Neu. Defects and Properties of Semiconductors | Defect Engineering | J. Chikawa (u. a.) | Taschenbuch | Advances in Solid State Technology | 300 S. | Englisch | 2011 | Springer | EAN 9789401086165 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.
Sprache: Englisch
Verlag: Springer Netherlands, Springer Netherlands, 2011
ISBN 10: 9401086168 ISBN 13: 9789401086165
Anbieter: AHA-BUCH GmbH, Einbeck, Deutschland
Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - This volume contains nearly all of the papers presented at the Symposium on 'Defects and Qualities of Semiconductors' which was held in Tokyo on May 17-18, 1984, under the sponsorship of the SOCIETY OF NON-TRADITIONAL TECHNOLOGY. The Symposium was organized by the promoting committee of the research project 'Quality Developement of Semiconductors by Utilization of Crystal Defects' sponsored by the Science and Technology Agency of Japan. Defect study in semiconductor engineering started originally with seeking methods how to suppress generation of harmful defects during device processing in order to achieve a high yield of device fabrication. Recently, a new trend has appeared in which crystal defects are positively utilized to improve the device performance and reliability. A typical example is the intrinsic gettering technique for Czochralski silicon. Thus, a new term 'DEFECT ENGINEERING' was born. It is becoming more important to control density and distribution of defects than to eliminate all the defects. Very precise and deep knowledge on defects is required to establish such techniques as generation and development of defects desired depending on type of devices and degree of integration. Electrical, optical and mechanical effects of defects should be also understood correctly. Such knowledge is essential even for eliminating defects from some specified device regions. It is the time now to investigate defect properties and defect kinetics in an energetic way. From this point of view, all the speakers in this symposium were invited among the most active investigators in the field of defect engineering in Japan.
Anbieter: Mispah books, Redhill, SURRE, Vereinigtes Königreich
EUR 320,50
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In den WarenkorbHardcover. Zustand: Very Good. Dust Jacket may NOT BE INCLUDED.CDs may be missing. SHIPS FROM MULTIPLE LOCATIONS. book.
Verlag: 1917, 1917
Anbieter: Charlotte Du Rietz Rare Books (ILAB), Stockholm, Schweden
Accordion-bound book. Size: 24.1 x 21.6 cm. Title and content in Japanese. With 19 colour woodblock-printed illustrations of different kabuki actors. Pasted on sprinkled paper. Silk covered boards, printed title paper label on front cover. Housed in cloth folder.Comprises eighteen famous kabuki plays selected by Ichikawa Danjuro VII (1791-1859): Yanone, Nanatsumen, Gedatsu, Ja-Yanagi, Kamahige, Kagekiyo, Sukeroku, Uiro, Kanu, Fudo, Narukami, Zouhiki, Uwanari, Oshimodoshi, Kenuki, Shibaraku, Fuwa and Kanjincho. Several major Kabuki families made their own groups of "Eighteen Favourites" but no one managed to maintain a lasting fame as Danjuro VII's selection. Rare.
Sprache: Englisch
Verlag: Springer Berlin Heidelberg, 2013
ISBN 10: 3662151073 ISBN 13: 9783662151075
Anbieter: moluna, Greven, Deutschland
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In den WarenkorbZustand: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Synchrotron radiation studies on insect flight muscle.- Protein single crystal diffraction.- Synchrotron light on ribosomes: The development of crystallographic studies of bacterial ribosomal particles.- Application of EXAFS to biochemical systems.- Structu.
Sprache: Englisch
Verlag: Springer Netherlands Dez 2011, 2011
ISBN 10: 9401086168 ISBN 13: 9789401086165
Anbieter: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Deutschland
Taschenbuch. Zustand: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This volume contains nearly all of the papers presented at the Symposium on 'Defects and Qualities of Semiconductors' which was held in Tokyo on May 17-18, 1984, under the sponsorship of the SOCIETY OF NON-TRADITIONAL TECHNOLOGY. The Symposium was organized by the promoting committee of the research project 'Quality Developement of Semiconductors by Utilization of Crystal Defects' sponsored by the Science and Technology Agency of Japan. Defect study in semiconductor engineering started originally with seeking methods how to suppress generation of harmful defects during device processing in order to achieve a high yield of device fabrication. Recently, a new trend has appeared in which crystal defects are positively utilized to improve the device performance and reliability. A typical example is the intrinsic gettering technique for Czochralski silicon. Thus, a new term 'DEFECT ENGINEERING' was born. It is becoming more important to control density and distribution of defects than to eliminate all the defects. Very precise and deep knowledge on defects is required to establish such techniques as generation and development of defects desired depending on type of devices and degree of integration. Electrical, optical and mechanical effects of defects should be also understood correctly. Such knowledge is essential even for eliminating defects from some specified device regions. It is the time now to investigate defect properties and defect kinetics in an energetic way. From this point of view, all the speakers in this symposium were invited among the most active investigators in the field of defect engineering in Japan. 272 pp. Englisch.
Anbieter: moluna, Greven, Deutschland
EUR 65,94
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In den WarenkorbZustand: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. This volume contains nearly all of the papers presented at the Symposium on Defects and Qualities of Semiconductors which was held in Tokyo on May 17-18, 1984, under the sponsorship of the SOCIETY OF NON-TRADITIONAL TECHNOLOGY. The Symposium was organized.
Sprache: Englisch
Verlag: Springer Netherlands, Springer Dez 2011, 2011
ISBN 10: 9401086168 ISBN 13: 9789401086165
Anbieter: buchversandmimpf2000, Emtmannsberg, BAYE, Deutschland
Taschenbuch. Zustand: Neu. This item is printed on demand - Print on Demand Titel. Neuware -This volume contains nearly all of the papers presented at the Symposium on 'Defects and Qualities of Semiconductors' which was held in Tokyo on May 17-18, 1984, under the sponsorship of the SOCIETY OF NON-TRADITIONAL TECHNOLOGY. The Symposium was organized by the promoting committee of the research project 'Quality Developement of Semiconductors by Utilization of Crystal Defects' sponsored by the Science and Technology Agency of Japan. Defect study in semiconductor engineering started originally with seeking methods how to suppress generation of harmful defects during device processing in order to achieve a high yield of device fabrication. Recently, a new trend has appeared in which crystal defects are positively utilized to improve the device performance and reliability. A typical example is the intrinsic gettering technique for Czochralski silicon. Thus, a new term 'DEFECT ENGINEERING' was born. It is becoming more important to control density and distribution of defects than to eliminate all the defects. Very precise and deep knowledge on defects is required to establish such techniques as generation and development of defects desired depending on type of devices and degree of integration. Electrical, optical and mechanical effects of defects should be also understood correctly. Such knowledge is essential even for eliminating defects from some specified device regions. It is the time now to investigate defect properties and defect kinetics in an energetic way. From this point of view, all the speakers in this symposium were invited among the most active investigators in the field of defect engineering in Japan.Springer-Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 272 pp. Englisch.