ibrahim agool (10 Ergebnisse)

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Zustand: New. pp. 180.

Paperback. Zustand: Brand New. 124 pages. 8.66x5.91x0.28 inches. In Stock.

Taschenbuch. Zustand: Neu. MIS Heterojunction Devices | SnO2/SiO2/Si MIS Heterojunction Devices for Optoelectronic Application | Ibrahim R. Agool (u. a.) | Taschenbuch | 124 S. | Englisch | 2012 | LAP LAMBERT Academic Publishing | EAN 9783659262722 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter: preigu.

Taschenbuch. Zustand: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -In the present work, preparation of high quality transparent conductive SnO2 thin films by post-oxidation of vacuum evaporated tin, on quartz and silicon substrates is presented. The oxidation was achieved in a short time (90 sec) which is known as rapid thermal oxidation (RTO). Many growth parameters have been considered to specify the optimum conditions, namely, oxidation temperature and oxidation time. Optical, electrical and structural properties of SnO2 films are investigated and analyzed extensively with respect to growth conditions. After obtaining the best results for the preparation of a film. The film was used for the manufacture of MIS devices and for comparison: two types of silicon substrates were used: (n-type and p-type). The optical properties of SnO2 films revealed that the optical band gap is 3.54 eV at optimum condition. The transmission rate of SnO2 films was high (95%) which was reduced with the reduction of oxidation time, while the electrical properties of undoped SnO2 films confirm that these films are n-type and highly conductive. The electrical resistivity was found to be very sensitive to film thickness and substrate temperature. 124 pp. Englisch.

Zustand: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Agool Ibrahim R.Ibrahim R. Agool received the B.Sc degree in Physics AL-Mustansiriyah University, Baghdad , Iraq in 1973, M.Sc degrees in Aston University in Birmingham, U.K in 1982 and Ph.D degrees in Heriot-Watt University United.

Zustand: New. Print on Demand pp. 180 2:B&W 6 x 9 in or 229 x 152 mm Perfect Bound on Creme w/Gloss Lam.

Taschenbuch. Zustand: Neu. This item is printed on demand - Print on Demand Titel. Neuware -In the present work, preparation of high quality transparent conductive SnO2 thin films by post-oxidation of vacuum evaporated tin, on quartz and silicon substrates is presented. The oxidation was achieved in a short time (90 sec) which is known as rapid thermal oxidation (RTO). Many growth parameters have been considered to specify the optimum conditions, namely, oxidation temperature and oxidation time. Optical, electrical and structural properties of SnO2 films are investigated and analyzed extensively with respect to growth conditions. After obtaining the best results for the preparation of a film. The film was used for the manufacture of MIS devices and for comparison: two types of silicon substrates were used: (n-type and p-type). The optical properties of SnO2 films revealed that the optical band gap is 3.54 eV at optimum condition. The transmission rate of SnO2 films was high (95%) which was reduced with the reduction of oxidation time, while the electrical properties of undoped SnO2 films confirm that these films are n-type and highly conductive. The electrical resistivity was found to be very sensitive to film thickness and substrate temperature.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 124 pp. Englisch.

Taschenbuch. Zustand: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - In the present work, preparation of high quality transparent conductive SnO2 thin films by post-oxidation of vacuum evaporated tin, on quartz and silicon substrates is presented. The oxidation was achieved in a short time (90 sec) which is known as rapid thermal oxidation (RTO). Many growth parameters have been considered to specify the optimum conditions, namely, oxidation temperature and oxidation time. Optical, electrical and structural properties of SnO2 films are investigated and analyzed extensively with respect to growth conditions. After obtaining the best results for the preparation of a film. The film was used for the manufacture of MIS devices and for comparison: two types of silicon substrates were used: (n-type and p-type). The optical properties of SnO2 films revealed that the optical band gap is 3.54 eV at optimum condition. The transmission rate of SnO2 films was high (95%) which was reduced with the reduction of oxidation time, while the electrical properties of undoped SnO2 films confirm that these films are n-type and highly conductive. The electrical resistivity was found to be very sensitive to film thickness and substrate temperature.

Zustand: New. PRINT ON DEMAND pp. 180.