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In den WarenkorbZustand: Hervorragend. Zustand: Hervorragend | Seiten: 264 | Sprache: Englisch | Produktart: Bücher | This study is a theoretical investigation of the electronic and optical properties of intrinsic semiconductors using the orthogonal empirical tight binding model. An analysis of the bulk properties of semiconductors with the zincblende, diamond and rocksalt structures has been carried out. We have extended the work of others to higher order in the interaction integrals and derived new parameter sets for certain semiconductors which better fit the experimental data over the Brillouin zone. The Hamiltonian of the heterostructures is built up layer by layer from the parameters of the bulk constituents.The second part of this work examines a number of applications of the theory. We present a new microscopic derivation of the intervalley deformation potentials within the tight binding representation and computes a number of conduction-band deformation potentials of bulk semiconductors. We have also studied the electronic states in heterostructures and have shown theoretically the possibility of having barrier localization of above-barrier states in a multivalley heterostructure using a multiband calculation. Another result is the proposal for a new "type-II" lasing mechanism in short-period GaAs/AlAs superlattices. As for our work on the optical properties, a new formalism, based on the generalized Feynman-Hellmann theorem, for computing interband optical matrix elements has been obtained and has been used to compute the linear and second-order nonlinear optical properties of a number of bulk semiconductors and semiconductor heterostructures. In agreement with the one-band elective mass calculations of other groups, our more elaborate calculations show that the intersubband oscillator strengths of quantum wells can be greatly enhanced over the bulk interband values.
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Verlag: Springer, Berlin, Springer Berlin Heidelberg, Springer, 2009
ISBN 10: 3540928715 ISBN 13: 9783540928713
Sprache: Englisch
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In den WarenkorbZustand: New. Print on Demand pp. 264 1:B&W 5.5 x 8.5 in or 216 x 140 mm (Demy 8vo) Perfect Bound on Creme w/Gloss Lam.
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Taschenbuch. Zustand: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - This study is a theoretical investigation of the electronic and optical properties of intrinsic semiconductors using the orthogonal empirical tight binding model. An analysis of the bulk properties of semiconductors with the zincblende, diamond and rocksalt structures has been carried out. We have extended the work of others to higher order in the interaction integrals and derived new parameter sets for certain semiconductors which better fit the experimental data over the Brillouin zone. The Hamiltonian of the heterostructures is built up layer by layer from the parameters of the bulk constituents.The second part of this work examines a number of applications of the theory. We present a new microscopic derivation of the intervalley deformation potentials within the tight binding representation and computes a number of conduction-band deformation potentials of bulk semiconductors. We have also studied the electronic states in heterostructures and have shown theoretically the possibility of having barrier localization of above-barrier states in a multivalley heterostructure using a multiband calculation. Another result is the proposal for a new 'type-II' lasing mechanism in short-period GaAs/AlAs superlattices. As for our work on the optical properties, a new formalism, based on the generalized Feynman-Hellmann theorem, for computing interband optical matrix elements has been obtained and has been used to compute the linear and second-order nonlinear optical properties of a number of bulk semiconductors and semiconductor heterostructures. In agreement with the one-band elective mass calculations of other groups, our more elaborate calculations show that the intersubband oscillator strengths of quantum wells can be greatly enhanced over the bulk interband values.
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Taschenbuch. Zustand: Neu. Electronic and Optical Properties of Semiconductors | A Study Based on the Empirical Tight Binding Model | Lok C. Lew Yan Voon | Taschenbuch | Kartoniert / Broschiert | Englisch | 1997 | [.] | EAN 9780965856447 | Verantwortliche Person für die EU: Libri GmbH, Europaallee 1, 36244 Bad Hersfeld, gpsr[at]libri[dot]de | Anbieter: preigu Print on Demand.
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Verlag: Springer Berlin Heidelberg, 2010
ISBN 10: 3642100902 ISBN 13: 9783642100901
Sprache: Englisch
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In den WarenkorbZustand: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. For bulk crystals, this is the first time all the major techniques for deriving the most popular Hamiltonians have been provided in one placeFor nanostructures, this is the first time the Burt-Foreman theory has been made accessibleDr. .