Sattler james (20 Ergebnisse)

Unknown Binding. Zustand: Very Good. 4th. It's a well-cared-for item that has seen limited use. The item may show minor signs of wear. All the text is legible, with all pages included. It may have slight markings and/or highlighting.

Zustand: good. A copy that has been read, remains in good condition. All pages are intact, and the cover is intact. The spine and cover show signs of wear. Pages can include notes and highlighting and show signs of wear, and the copy can include "From the library of" labels or previous owner inscriptions. 100% GUARANTEE! Shipped with delivery confirmation, if you're not satisfied with purchase please return item! Ships via media mail.…

Unknown Binding. Zustand: Very Good. 4th. It's a well-cared-for item that has seen limited use. The item may show minor signs of wear. All the text is legible, with all pages included. It may have slight markings and/or highlighting.

unknown_binding. Zustand: Good. Used books may not include access codes or one time use codes. Proven Seller with Excellent Customer Service. Choose expedited shipping and get it FAST.

Zustand: New.

Paperback or Softback. Zustand: New. An Analysis of the Effects of Low Energy Electron Radiation on A1xga1-Xn/Gan Modulation-Doped Field-Effect Transistors. Book.

Zustand: New. In English.

Zustand: New.

Hardcover. Zustand: Good. Third Edition. The book is in good condition with a hardcover binding. The dust jacket shows minor wear, including slight edge tears, but remains intact. The interior pages are clean and free of inscriptions or markings. Overall, the book is well-preserved, suitable for both collectors and enthusiasts seeking a reliable reference. Minor wear with slight edge tears.…

Taschenbuch. Zustand: Neu. Neuware - The effects of radiation on AlxGa1-xN/GaN MODFETs is an area of increasing interest to the USAF as these devices become developed and integrated in satellite-based systems. Irradiation is also a valuable tool for analyzing the quantum-level characteristics and properties that are responsible for device operation. AlxGa1-xN/GaN MODFETs were fabricated and irradiated at liquid nitrogen temperatures by 0.45 -1.2 MeV electrons up to doses of 6 1016 e /cm2. Following irradiation, low temperature I-V measurements were recorded providing dose-dependent measurements. Temperature-dependent I-V measurements were also made during room temperature annealing following irradiation. I-V measurements indicate radiation-induced changes occur in these devices creating increased gate and drain currents. These increased currents are only maintained at low temperatures (T greater than 300 K). It is believed that the increase in gate current is caused by an increase in the electron trap concentration of the AlxGa1-xN layer. This increase in trap concentration directly increases the trap-assisted tunneling current resulting in the observed increase in gate current. The mechanism causing the increase in drain current is unknown. Several theories explaining this increase are presented along with the additional research necessary to illuminate the correct theory. This is the first experiment involving electron radiation of AlxGa1-xN/GaN MODFETs.…

Zustand: New. KlappentextrnrnThe effects of radiation on AlxGa1-xN/GaN MODFETs is an area of increasing interest to the USAF as these devices become developed and integrated in satellite-based systems. Irradiation is also a valuable tool for analyzing the qua.

Zustand: As New. Unread book in perfect condition.

PAP. Zustand: New. New Book. Shipped from UK. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000.

Zustand: As New. Unread book in perfect condition.

paperback. Zustand: Like New. LIKE NEW. SHIPS FROM MULTIPLE LOCATIONS. book.

PAP. Zustand: New. New Book. Delivered from our UK warehouse in 4 to 14 business days. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000.

Zustand: New. Print on Demand pp. 146.

Zustand: new.

Zustand: New. Print on Demand pp. 146.

Zustand: New. PRINT ON DEMAND pp. 146.