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In den WarenkorbZustand: New.
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In den WarenkorbZustand: As New. Unread book in perfect condition.
Sprache: Englisch
Verlag: Morgan & Claypool Publishers, 2016
ISBN 10: 1627058524 ISBN 13: 9781627058520
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In den WarenkorbSoft cover. Zustand: As New. This book has been in storage since publication and is unread. Hence the description as new .
Sprache: Englisch
Verlag: Springer International Publishing AG, CH, 2016
ISBN 10: 3031009002 ISBN 13: 9783031009006
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In den WarenkorbPaperback. Zustand: New. Ever since its invention in the 1980s, the compound semiconductor heterojunction-based high electron mobility transistor (HEMT) has been widely used in radio frequency (RF) applications. This book provides readers with broad coverage on techniques and new trends of HEMT, employing leading compound semiconductors, III-N and III-V materials. The content includes an overview of GaN HEMT device-scaling technologies and experimental research breakthroughs in fabricating various GaN MOSHEMT transistors. Readers are offered an inspiring example of monolithic integration of HEMT with LEDs, too. The authors compile the most relevant aspects of III-V HEMT, including the current status of state-of-art HEMTs, their possibility of replacing the Si CMOS transistor channel, and growth opportunities of III-V materials on an Si substrate. With detailed exploration and explanations, the book is a helpful source suitable for anyone learning about and working on compound semiconductor devices.
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In den WarenkorbZustand: New. In English.
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In den WarenkorbZustand: As New. Unread book in perfect condition.
Sprache: Englisch
Verlag: Springer International Publishing AG, CH, 2016
ISBN 10: 3031009002 ISBN 13: 9783031009006
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In den WarenkorbPaperback. Zustand: New. Ever since its invention in the 1980s, the compound semiconductor heterojunction-based high electron mobility transistor (HEMT) has been widely used in radio frequency (RF) applications. This book provides readers with broad coverage on techniques and new trends of HEMT, employing leading compound semiconductors, III-N and III-V materials. The content includes an overview of GaN HEMT device-scaling technologies and experimental research breakthroughs in fabricating various GaN MOSHEMT transistors. Readers are offered an inspiring example of monolithic integration of HEMT with LEDs, too. The authors compile the most relevant aspects of III-V HEMT, including the current status of state-of-art HEMTs, their possibility of replacing the Si CMOS transistor channel, and growth opportunities of III-V materials on an Si substrate. With detailed exploration and explanations, the book is a helpful source suitable for anyone learning about and working on compound semiconductor devices.
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In den WarenkorbZustand: New. Print on Demand.
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Sprache: Englisch
Verlag: Springer International Publishing, 2016
ISBN 10: 3031009002 ISBN 13: 9783031009006
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In den WarenkorbZustand: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Zhaojun Liu, Ph.D., is currently an assistant professor with Sun Yat-sen University-Carnegie Mellon University Joint Institute of Engineering (JIE) and Shunde International Joint Research Institute (JRI). He received the B.Eng. degree in Electrical Engineer.