Yang cary (76 Ergebnisse)

Zustand: very_good.

Zustand: Good. : Este libro ofrece un análisis fundamental y exhaustivo sobre los efectos de los portadores calientes en los dispositivos MOS, un tema de creciente importancia debido al auge de los circuitos integrados ultrarrápidos y de tamaño reducido. Basado en la obra original del Dr. Eiji Takeda, este texto ha sido significativamente ampliado para incluir los últimos descubrimientos en la investigación del área, así como los principios básicos de los dispositivos MOS y sus aplicaciones prácticas en la industria tecnológica actual.La obra constituye una referencia esencial para ingenieros y estudiantes interesados en la física de semiconductores y la ingeniería de dispositivos. A través de sus páginas, se exploran las consideraciones prácticas y los desafíos técnicos que enfrentan los fabricantes al integrar estas tecnologías en el mundo real, consolidándose como un manual técnico indispensable para comprender el comportamiento de los portadores en entornos de alta velocidad. EAN: 9780123958044 Tipo: Libros Categoría: Tecnología|Ciencias Título: Hot-carrier effects in MOS devices Autor: Eiji Takeda| Cary Y. Yang| Akemi Miura-Hamada Editorial: Academic Press Idioma: en Páginas: 328 Formato: tapa blanda.…

Hardcover. Zustand: Very Good. No Dust Jacket. 1st Edition. Previous owner's name in ink inside front board. Otherwise copy in near fine condition. 312 pages.

Hardcover. Zustand: Very Good. Zustand des Schutzumschlags: Very Good. First Edition. Metropolitan Museum of Art, 2017; stated First Printing; xv, 252pp. Binding is tight, sturdy, and square; blue cloth boards in VG condition, corners sharp, gilt titling remains bright and bold; photos, illustrations and text also very good. Unclipped dust jacket in VG condition, arrives wrapped in protective mylar. Not available for domestic priority/expedited shipping. Ships from Dinkytown in Minneapolis, Minnesota. …

gebundene Ausgabe. Zustand: Gut. 372 Seiten; Das hier angebotene Buch stammt aus einer teilaufgelösten wissenschaftlichen Bibliothek und trägt die entsprechenden Kennzeichnungen (Rückenschild, Instituts-Stempel.); Schnitt und Einband sind etwas staubschmutzig; der Buchzustand ist ansonsten ordentlich und dem Alter entsprechend gut. Text in ENGLISCHER Sprache! Sprache: Englisch Gewicht in Gramm: 700.…

Hardcover. Zustand: Fine. Zustand des Schutzumschlags: Fine. 1st. Cloth, xv, 252 pages, illustrations, maps; 32 cm. Catalogue of an exhibition held April 3 to July 16, 2017 at the Metropolitan Museum of Art. Firm binding, clean inside copy. Dust jacket protected in a mylar cover. OVERSIZE! Additional shipping charges may be requested for international & priority orders. A massive coffee-table book. Richly illustrated with colour plates. *** "Age of Empires presents the art and culture of China during one of the most critical periods of its history - the four centuries from 221 B.C. to A.D. 200-- when, for the first time, people of diverse backgrounds were brought together under centralized imperial rule that fostered a new and unified identity. The Qin and Han empires represent the 'classical' era of Chinese civilization, coinciding in both importance and timing with the Greco-Roman period in the West. Under the short-lived Qin and centuries-long Han, warring principalities were united under a common emperor, creating not only political and intellectual institutions but also the foundation for a Chinese art, culture, and national identity that lasted over two millennia. Over 150 works from across the full breadth of Chinese artistic and decorative media-- including ceramics, metalwork, textiles, armor, sculpture, and jewelry - are featured in this book and attest to the unprecedented role of art in ancient Chinese culture. These stunning objects, among them soldiers from the renowned terracotta army of Qin Shihuang, China's first emperor, are drawn from institutions and collections in China and appear here together for the first time." - Publisher. *** CONTENTS: The Making of China: The Establishment of a Lasting Political Paradigm and Cultural Identity During the Qin and Han Dynasties, by Zhixin Jason Sun; Qin and Han Political Institutions and Administration, by Robin D. S. Yates; Military Armaments of the Qin and Han, by Yang Hong; The Qin and Han Imperial City: Modeling and Visualizing Architecture, by Cary Y. Liu; The Ingenuity of Qin-Han Craftsmanship, by Pengliang Lu; Popular Beliefs in the Qin and Han Dynasties, by Lillian Lan-ying Tseng; Qin-Han China and the Outside World, by I-tien Hsing; Catalogue. The Qin Dynasty: Birth of a Unified China; The Han Dynasty: The Consolidation of Empire; The Han Dynasty: One Nation, Many Cultures. Size: Folio. Collectible. …

Hardback. Zustand: New. The exploding number of uses for ultrafast, ultrasmall integrated circuits has increased the importance of hot-carrier effects in manufacturing as well as for other technological applications. They are rapidly movingout of the research lab and into the real world. This book is derived from Dr. Takedas book in Japanese, Hot-Carrier Effects, (published in 1987 by Nikkei Business Publishers). However, the new book is much more than a translation. Takedas original work was a starting point for developing this much more complete and fundamental text on this increasingly important topic. The new work encompasses not only all the latest research and discoveries made in the fast-paced area of hot carriers, but also includes the basics of MOS devices, and the practical considerations related to hot carriers.…

Hardcover. Zustand: Gut. 372 S. Ehem. Bibliotheksexemplar mit Bib.-Signatur und Stempel in GUTEM Zustand. Kaum Gebrauchsspuren. 3540536035 Sprache: Englisch Gewicht in Gramm: 550.

Zustand: New. In English.

Zustand: Very Good. *Price HAS BEEN REDUCED by 10% until Monday, Oct. 26 (weekend SALE item)* 232 pp., hardcover, very good. - If you are reading this, this item is actually (physically) in our stock and ready for shipment once ordered. We are not bookjackers. Buyer is responsible for any additional duties, taxes, or fees required by recipient's country.…

HRD. Zustand: New. New Book. Shipped from UK. Established seller since 2000.

Hardcover. Zustand: new. Hardcover. Presents a landmark volume documenting 100 years of field-effect transistor innovation and applications The invention of the field-effect transistor (FET) in 1925 transformed the trajectory of modern civilization, enabling virtually every electronic device in existence today. From the earliest integrated circuits to the most advanced computers and smartphones, the FET has served as the indispensable foundation of contemporary information technology. The FET Centennial: Celebrating the Field-Effect Transistor commemorates this milestone by gathering a distinguished group of contributors to provide a comprehensive account of the devices history, global development, diverse applications, and potential future directions. This unique volume begins with an in-depth exploration of the history and evolution of FET technology, including the MOSFETs rise and international advances across the United States, Europe, and Asia. It then highlights critical applications and integration processes, ranging from memory and logic devices to CMOS image sensors, analog/RF CMOS, and emerging thin-film and wide-bandgap transistors. Finally, it addresses state-of-the-art developments, such as 3D and gate-all-around FETs, nanoscale transport phenomena, and the incorporation of novel 2D materials, while considering the possibility of what is next for the FET and what might come after. A singular resource that not only documents a century of achievements but also contextualizes the field-effect transistors enduring importance and likely trajectory in the decades ahead, The FET Centennial: Addresses both historical milestones and technological disruptions shaping current and future electronics Examines international research and development with narratives from the United States, Europe, and Asia Covers device structures from MOSFETs to III-V and 2D-material-based FETs Includes forward-looking analyses of nanoscale transport, 3D architectures, and GAAFET innovations Features detailed coverage of process integration, interconnects, lithography, and compact modeling Authored by globally recognized experts with leadership roles in academia, industry, and professional societies, The FET Centennial: Celebrating the Field-Effect Transistor is essential reading for graduate and senior undergraduate students in electrical engineering, materials science, and applied physics courses such as Semiconductor Devices, Integrated Circuit Technology, and Microelectronics. It is also an indispensable reference for researchers, practicing engineers, and historians of science and technology. Shipping may be from multiple locations in the US or from the UK, depending on stock availability.…

Hardback. Zustand: New. New copy - Usually dispatched within 4 working days.

Zustand: New. In English.

Gebunden. Zustand: New. Chapter one itself is a comprehensive review of MOS device physics which allows a reader with little background in MOS devices to pick up a sufficient amount of information to be able to follow the rest of the book The book is written to a.

Zustand: New. In English.

Zustand: New. In English.

Zustand: New. In English.

Zustand: New.

Hardcover. Zustand: Gut. 432 S. Ehem. Bibliotheksexemplar mit Bib.-Signatur und Stempel in GUTEM Zustand. Kaum Gebrauchsspuren. 3540556877 Sprache: Englisch Gewicht in Gramm: 550.

Zustand: New.

Hardback. Zustand: New. The exploding number of uses for ultrafast, ultrasmall integrated circuits has increased the importance of hot-carrier effects in manufacturing as well as for other technological applications. They are rapidly movingout of the research lab and into the real world. This book is derived from Dr. Takedas book in Japanese, Hot-Carrier Effects, (published in 1987 by Nikkei Business Publishers). However, the new book is much more than a translation. Takedas original work was a starting point for developing this much more complete and fundamental text on this increasingly important topic. The new work encompasses not only all the latest research and discoveries made in the fast-paced area of hot carriers, but also includes the basics of MOS devices, and the practical considerations related to hot carriers.…

Zustand: New. pp. 216.

Zustand: New. pp. x + 232.

Zustand: New. pp. 388.

Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - Silicon carbide and other group IV-IV materials in theiramorphous, microcrystalline, and crystalline forms have awide variety of applications.The contributions to thisvolume report recent developments and trends in the field.The purpose is to make available the current state ofunderstanding of the materials and their potentialapplications. Eachcontribution focuses on a particulartopic, such as preparation methods, characterization, andmodels explaining experimental findings. The volume alsocontains the latest results in the exciting field of SiGe/Siheterojunction bipolar transistors.The reader will find this book valuable as a referencesource, an up-to-date and in-depth overview of this field,and, most importantly, as a window into the immense range ofreading potential applications of silicon carbide. It isessential for scientists, engineers and students interestedin electronic materials, high-speed heterojunction devices,and high-temperature optoelectronics.…

Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - Although silicon carbide has been used for more than half a century, its potential as a high-temperature, corrosion-resistant semiconductor has only recently begun to be exploited. Both crystalline and amorphous forms of SiC offer several advantages over Si, GaAs, and InP for high-frequency, high-power, and high-speed circuits. This volume contains reports on high-temperature SiC MOSFETs and MESFETs, secondary harmonic generation in SiC, a-SiC emitter heterojunction bipolar transistors, and bulk crystal growth of 6H-SiC. For newcomers to the field it provides an up-to-date review of technological developments in SiC and related materials, while specialists will find here recent references and new insights into materials for high-temperature, high-power, and high-speed circuit applications.…

Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - This volume contains written versions of the papers presented at the Third Inter national Conference on Amorphous and Crystalline Silicon Carbide and Other Group IV-IV Materials (lCACSC 90), which was held at Howard University, April 11-13, 1990 in Washington, DC. The ICACSC continued to provide an international forum for discussion and exchange of ideas regarding the current state of research aimed at developing silicon carbide devices and circuits and related materials. ICACSC attracted over one hundred participants from seven countries. A special session was held in honor of the eight Soviet scientists who attended the conference. The substantial increase in the number of papers compared with the previous year is an indication of the growing interest in this field. The conference also included a poster session for the first time. This volume contains 54 refereed contributions grouped into four parts. Several exciting new results are reported for the first time here: SiC-based solid-solution growth and technology, the formation of SiGe heterostructures by ion implantation, 6H-SiC substrates grown by the sublimation method, expla nation of the appearance of negative differential resistance in a N+PN-SiC-6H transistor by the Wannier-Starck effect, the formation of amorphous SiC/Si het erojunctions by the polymer route, and the prospects of developing SiC bipolar transistors and thyristors.…

Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - This volume contains written versions of the papers presented at the Second Inter national Conference on Amorphous and Crystalline Silicon Carbide and Related Materials (ICACSC 1988), which was held at Santa Clara University on Decem ber 15 and 16, 1988. The conference followed the First ICACSC held at Howard University, Washington DC, in December 1987 and continued to provide an in ternational forum for discussion and exchange of ideas and results covering the current status of research on SiC and related materials. ICACSC 1988 attracted 105 participants from five countries. The substantial increase in the number of papers compared with the previous year is an indication of the growing interest in this field. Of the 45 papers presented at the conference, 36 refereed manuscripts are included in this volume, while the remaining 9 appear as abstracts. The six invited papers provide detailed reviews of recent results on amorphous and crystalline silicon carbide materials and devices, as well as diamond thin films. The volume is divided into six parts, each covering an important theme of the conference.…

Hardcover. Zustand: New. Brand new book, sourced directly from publisher. Dispatch time is 7-8 days from our warehouse. Book will be sent in robust, secure packaging to ensure it reaches you securely.