ISBN: 9780444506306 - iii-nitride semiconductors: electrical, structural and defects properties (7 Ergebnisse)

Hardcover. Zustand: Good. Book in Good condition.

Hardcover. Zustand: new. Hardcover. Research advances in III-nitride semiconductor materials and device have led to an exponential increase in activity directed towards electronic and optoelectronic applications. There is also great scientific interest in this class of materials because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. This volume consists of chapters written by a number of leading researchers in nitride materials and device technology with the emphasis on the dopants incorporations, impurities identifications, defects engineering, defects characterization, ion implantation, irradiation-induced defects, residual stress, structural defects and phonon confinement. Research advances in III-nitride semiconductor materials and device have led to an exponential increase in activity directed towards electronic and optoelectronic applications. This volume provides a comprehensive review and introduction of defects and structural properties of GaN and related compounds for newcomers to the field. Shipping may be from multiple locations in the US or from the UK, depending on stock availability.…

Gebunden. Zustand: New. Research advances in III-nitride semiconductor materials and device have led to an exponential increase in activity directed towards electronic and optoelectronic applications. There is also great scientific interest in this class of materials because they .

Zustand: New. 2000. 1st Edition. hardcover. . . . . .

Hardcover. Zustand: Brand New. 1st edition. 400 pages. 9.50x6.75x1.00 inches. In Stock.

Zustand: New. 2000. 1st Edition. hardcover. . . . . . Books ship from the US and Ireland.

Hardcover. Zustand: new. Hardcover. Research advances in III-nitride semiconductor materials and device have led to an exponential increase in activity directed towards electronic and optoelectronic applications. There is also great scientific interest in this class of materials because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. This volume consists of chapters written by a number of leading researchers in nitride materials and device technology with the emphasis on the dopants incorporations, impurities identifications, defects engineering, defects characterization, ion implantation, irradiation-induced defects, residual stress, structural defects and phonon confinement. Research advances in III-nitride semiconductor materials and device have led to an exponential increase in activity directed towards electronic and optoelectronic applications. This volume provides a comprehensive review and introduction of defects and structural properties of GaN and related compounds for newcomers to the field. Shipping may be from our Sydney, NSW warehouse or from our UK or US warehouse, depending on stock availability.…