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Verlag: Springer, 2006
ISBN 10: 140204366XISBN 13: 9781402043666
Anbieter: booksXpress, Bayonne, NJ, USA
Buch
Soft Cover. Zustand: new.
Verlag: Springer, 2006
ISBN 10: 140204366XISBN 13: 9781402043666
Anbieter: Lucky's Textbooks, Dallas, TX, USA
Buch
Zustand: New.
Verlag: Springer Netherlands, 2006
ISBN 10: 140204366XISBN 13: 9781402043666
Anbieter: moluna, Greven, Deutschland
Buch Print-on-Demand
Zustand: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Proceedings of the NATO Advanced Research Workshop on Defects in Advanced High-K Dielectric Nano-Electronic Semiconductor Devices, St. Petersburg, Russia, from 11 to 14 July 2005.|To the best of our knowledge, this is the first focused collection of pape.
Verlag: Springer Netherlands Jan 2006, 2006
ISBN 10: 140204366XISBN 13: 9781402043666
Anbieter: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Deutschland
Buch Print-on-Demand
Taschenbuch. Zustand: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -The goal of this NATO Advanced Research Workshop (ARW) entitled 'Defects in Advanced High-k Dielectric Nano-electronic Semiconductor Devices', which was held in St. Petersburg, Russia, from July 11 to 14, 2005, was to examine the very complex scientific issues that pertain to the use of advanced high dielectric constant (high-k) materials in next generation semiconductor devices. The special feature of this workshop was focus on an important issue of defects in this novel class of materials. One of the key obstacles to high-k integration into Si nano-technology are the electronic defects in high-k materials. It has been established that defects do exist in high-k dielectrics and they play an important role in device operation. However, very little is known about the nature of the defects or about possible techniques to eliminate, or at least minimize them. Given the absence of a feasible alternative in the near future, well-focused scientific research and aggressive development programs on high-k gate dielectrics and related devices must continue for semiconductor electronics to remain a competitive income producing force in the global market. 508 pp. Englisch.
Verlag: Springer, 2006
ISBN 10: 140204366XISBN 13: 9781402043666
Anbieter: Ria Christie Collections, Uxbridge, Vereinigtes Königreich
Buch Print-on-Demand
Zustand: New. PRINT ON DEMAND Book; New; Fast Shipping from the UK. No. book.
Verlag: Springer Netherlands, 2006
ISBN 10: 140204366XISBN 13: 9781402043666
Anbieter: AHA-BUCH GmbH, Einbeck, Deutschland
Buch
Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - The goal of this NATO Advanced Research Workshop (ARW) entitled 'Defects in Advanced High-k Dielectric Nano-electronic Semiconductor Devices', which was held in St. Petersburg, Russia, from July 11 to 14, 2005, was to examine the very complex scientific issues that pertain to the use of advanced high dielectric constant (high-k) materials in next generation semiconductor devices. The special feature of this workshop was focus on an important issue of defects in this novel class of materials. One of the key obstacles to high-k integration into Si nano-technology are the electronic defects in high-k materials. It has been established that defects do exist in high-k dielectrics and they play an important role in device operation. However, very little is known about the nature of the defects or about possible techniques to eliminate, or at least minimize them. Given the absence of a feasible alternative in the near future, well-focused scientific research and aggressive development programs on high-k gate dielectrics and related devices must continue for semiconductor electronics to remain a competitive income producing force in the global market.
Verlag: Springer, 2006
ISBN 10: 140204366XISBN 13: 9781402043666
Anbieter: Books Puddle, New York, NY, USA
Buch
Zustand: New. pp. 508.
Verlag: Springer, 2006
ISBN 10: 140204366XISBN 13: 9781402043666
Anbieter: Majestic Books, Hounslow, Vereinigtes Königreich
Buch Print-on-Demand
Zustand: New. Print on Demand pp. 508 49:B&W 6.14 x 9.21 in or 234 x 156 mm (Royal 8vo) Perfect Bound on White w/Gloss Lam.
Verlag: Springer, 2006
ISBN 10: 140204366XISBN 13: 9781402043666
Anbieter: Mispah books, Redhill, SURRE, Vereinigtes Königreich
Buch
Paperback. Zustand: Like New. Like New. book.