9783659927140 - gallium nitride based metal-insulator-semiconductor (mis) structures von rajagopal reddy, varra; lakshmi, b. prasanna (6 Ergebnisse)
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Taschenbuch. Zustand: Neu. Gallium Nitride Based Metal-Insulator-Semiconductor (MIS) Structures | Varra Rajagopal Reddy (u. a.) | Taschenbuch | 148 S. | Englisch | 2016 | LAP LAMBERT Academic Publishing | EAN 9783659927140 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[a…t]preigu[dot]de | Anbieter: preigu.
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Taschenbuch. Zustand: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Gallium nitride (GaN) metal-insulator-semiconductor (MIS) are very attractive because of their advantages such as a small gate leakage current, a large gate forward voltage, and surface passivation effect suppressing the drain current… collapse. However, conventional Schottky barrier transistors suffer from the high gate leakage current and in particular the leakage current in the forward direction can cause fast device degradation. Reduction of the gate leakage current can be realized by employing an insulated gate metal-oxide-semiconductor technique. The interest in the experimental studies of metal-semiconductor (MS), metal-insulator-semiconductor (MIS) Schottky diodes rooted in their importance of the insulating layer between metal and semiconductor. The existence of such interfacial layer can have strong influence on the device characteristics such as the barrier height, ideality factor, and as well the interface state density. Due to the technological importance of the metal-insulator-semiconductor (MIS), a full understanding of its electrical properties is of great interest. 148 pp. Englisch.
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Zustand: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Rajagopal Reddy VarraProf. Reddy has published more than 175 articles in referred journals, and has been author or co-author of over 115 conference papers. Prof. Reddy has successfully guided 16 PhDs in t…he field of Advanced Electron.
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Taschenbuch. Zustand: Neu. This item is printed on demand - Print on Demand Titel. Neuware -Gallium nitride (GaN) metal-insulator-semiconductor (MIS) are very attractive because of their advantages such as a small gate leakage current, a large gate forward voltage, and surface passivation effect suppressing the drain current col…lapse. However, conventional Schottky barrier transistors suffer from the high gate leakage current and in particular the leakage current in the forward direction can cause fast device degradation. Reduction of the gate leakage current can be realized by employing an insulated gate metal-oxide-semiconductor technique. The interest in the experimental studies of metal-semiconductor (MS), metal-insulator-semiconductor (MIS) Schottky diodes rooted in their importance of the insulating layer between metal and semiconductor. The existence of such interfacial layer can have strong influence on the device characteristics such as the barrier height, ideality factor, and as well the interface state density. Due to the technological importance of the metal-insulator-semiconductor (MIS), a full understanding of its electrical properties is of great interest.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 148 pp. Englisch.
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Taschenbuch. Zustand: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - Gallium nitride (GaN) metal-insulator-semiconductor (MIS) are very attractive because of their advantages such as a small gate leakage current, a large gate forward voltage, and surface passivation effect suppressing the drain current coll…apse. However, conventional Schottky barrier transistors suffer from the high gate leakage current and in particular the leakage current in the forward direction can cause fast device degradation. Reduction of the gate leakage current can be realized by employing an insulated gate metal-oxide-semiconductor technique. The interest in the experimental studies of metal-semiconductor (MS), metal-insulator-semiconductor (MIS) Schottky diodes rooted in their importance of the insulating layer between metal and semiconductor. The existence of such interfacial layer can have strong influence on the device characteristics such as the barrier height, ideality factor, and as well the interface state density. Due to the technological importance of the metal-insulator-semiconductor (MIS), a full understanding of its electrical properties is of great interest.
