Isbn: 9783725848331 - radiation effects of advanced electronic devices and circuits: 2nd edition (13 Ergebnisse)

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HRD. Zustand: New. New Book. Shipped from UK. Established seller since 2000.

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Hardcover. Zustand: new. Hardcover. Responding to the critical demands for radiation-hardened space electronics, this Reprint synthesizes cutting-edge advances in radiation effects research across advanced semiconductor technologies. It addresses dual industry challenges posed by escalating radiation susceptibility from device scaling and the urgent need for new evaluation paradigms in radiation hardness assurance for complex electronic systems. The Reprint features pioneering research on CNN accelerators for aerospace computing, gallium nitride (GaN) High Electron Mobility Transistors (HEMTs), high-barrier beta-gallium oxide (b-Ga2O3) Schottky Barrier Diodes (SBDs), silicon MOSFETs, and indium phosphide Heterojunction Bipolar Transistors (InP HBTs), collectively advancing radiation hardening methodologies and reliability assessment. By presenting novel hardening strategies with breakthrough radiation mitigation solutions, it delivers essential insights for navigating evolving challenges while positioning itself as a vital resource for advancing radiation tolerance electronics innovation. This item is printed on demand. Shipping may be from our UK warehouse or from our Australian or US warehouses, depending on stock availability.…

Buch. Zustand: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - Responding to the critical demands for radiation-hardened space electronics, this Reprint synthesizes cutting-edge advances in radiation effects research across advanced semiconductor technologies. It addresses dual industry challenges posed by escalating radiation susceptibility from device scaling and the urgent need for new evaluation paradigms in radiation hardness assurance for complex electronic systems. The Reprint features pioneering research on CNN accelerators for aerospace computing, gallium nitride (GaN) High Electron Mobility Transistors (HEMTs), high-barrier beta-gallium oxide (ß-GäO¿) Schottky Barrier Diodes (SBDs), silicon MOSFETs, and indium phosphide Heterojunction Bipolar Transistors (InP HBTs), collectively advancing radiation hardening methodologies and reliability assessment. By presenting novel hardening strategies with breakthrough radiation mitigation solutions, it delivers essential insights for navigating evolving challenges while positioning itself as a vital resource for advancing radiation tolerance electronics innovation.…

Buch. Zustand: Neu. Radiation Effects of Advanced Electronic Devices and Circuits | 2nd Edition | Buch | Englisch | 2025 | MDPI AG | EAN 9783725848331 | Verantwortliche Person für die EU: Libri GmbH, Europaallee 1, 36244 Bad Hersfeld, gpsr[at]libri[dot]de | Anbieter: preigu Print on Demand.