Isbn: 9783843377478 - investigation on schottky-barrier mosfets for memory application: schottky-barrier flash memory (9 Ergebnisse)

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Taschenbuch. Zustand: Neu. Investigation on Schottky-Barrier MOSFETs for Memory Application | Schottky-Barrier Flash Memory | Sung-Jin Choi (u. a.) | Taschenbuch | 100 S. | Englisch | 2010 | LAP LAMBERT Academic Publishing | EAN 9783843377478 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter: preigu. …

Taschenbuch. Zustand: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -The structure of Schottky-barrier (SB) MOSFETs was investigated for both the perspective of practical applications and interest in novel Flash memory. We demonstrated how the source-side injection of hot electrons in the dopant-segregated SB (DSSB) Flash memory cell achieves high-speed, low-voltage programming with excellent injection efficiency, and no constraints on the optimization of gate and drain voltages. Moreover, the drain disturbance-free phenomenon in NOR Flash architecture was achieved. Excellent programming efficiency, especially, was achieved in a DSSB Flash device with a narrow fin width due to an enhanced lateral electric field without any sacrifice of parasitic resistance. Thus, the DSSB device can be a promising candidate in NOR Flash memory for attaining a lower programming voltage and power consumption. 100 pp. Englisch.…

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Zustand: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Choi Sung-JinSung-Jin Choi is currently working toward the Ph.D. degree in the department of electrical engineering, KAIST, Daejeon, Korea. His current research interests include Schottky-barrier devices, capacitor-less DRAM, bio.…

Taschenbuch. Zustand: Neu. This item is printed on demand - Print on Demand Titel. Neuware -The structure of Schottky-barrier (SB) MOSFETs was investigated for both the perspective of practical applications and interest in novel Flash memory. We demonstrated how the source-side injection of hot electrons in the dopant-segregated SB (DSSB) Flash memory cell achieves high-speed, low-voltage programming with excellent injection efficiency, and no constraints on the optimization of gate and drain voltages. Moreover, the drain disturbance-free phenomenon in NOR Flash architecture was achieved. Excellent programming efficiency, especially, was achieved in a DSSB Flash device with a narrow fin width due to an enhanced lateral electric field without any sacrifice of parasitic resistance. Thus, the DSSB device can be a promising candidate in NOR Flash memory for attaining a lower programming voltage and power consumption.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 100 pp. Englisch.…

Taschenbuch. Zustand: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - The structure of Schottky-barrier (SB) MOSFETs was investigated for both the perspective of practical applications and interest in novel Flash memory. We demonstrated how the source-side injection of hot electrons in the dopant-segregated SB (DSSB) Flash memory cell achieves high-speed, low-voltage programming with excellent injection efficiency, and no constraints on the optimization of gate and drain voltages. Moreover, the drain disturbance-free phenomenon in NOR Flash architecture was achieved. Excellent programming efficiency, especially, was achieved in a DSSB Flash device with a narrow fin width due to an enhanced lateral electric field without any sacrifice of parasitic resistance. Thus, the DSSB device can be a promising candidate in NOR Flash memory for attaining a lower programming voltage and power consumption.…