9783959080286 - advanced modeling of silicon-germanium heterojunction bipolar transistors von pawlak, andreas (20 Ergebnisse)
- Softcover
Anbieter: GreatBookPrices, Columbia, MD, USAGreatBookPrices
Verkäufer/-in kontaktierenVerkäufer/-in mit 5 SternenZustand: Neu
EUR 36,21
EUR 2,28 VersandVersand innerhalb von USAAnzahl: Mehr als 20 verfügbar
Zustand: New.
- Softcover
Anbieter: Lucky's Textbooks, Dallas, TX, USALucky's Textbooks
Verkäufer/-in kontaktierenVerkäufer/-in mit 5 SternenZustand: Neu
EUR 35,02
EUR 3,45 VersandVersand innerhalb von USAAnzahl: Mehr als 20 verfügbar
Zustand: New.
- Softcover
Anbieter: California Books, Miami, FL, USACalifornia Books
Verkäufer/-in kontaktierenVerkäufer/-in mit 4 SternenZustand: Neu
EUR 40,06
Versand gratisVersand innerhalb von USAAnzahl: Mehr als 20 verfügbar
Zustand: New.
- Softcover
Anbieter: Ria Christie Collections, Uxbridge, Vereinigtes KönigreichRia Christie Collections
Verkäufer/-in kontaktierenVerkäufer/-in mit 5 SternenZustand: Neu
EUR 41,30
EUR 14,01 VersandVersand von Vereinigtes Königreich nach USAAnzahl: Mehr als 20 verfügbar
Zustand: New. In.
Sprache: Englisch
Verlag: TUDpress Verlag der Wissenschaften GmbH 2015-11, 2015
- Softcover
Anbieter: Chiron Media, Wallingford, Vereinigtes KönigreichChiron Media
Verkäufer/-in kontaktierenVerkäufer/-in mit 5 SternenZustand: Neu
EUR 37,17
EUR 18,11 VersandVersand von Vereinigtes Königreich nach USAAnzahl: 10 verfügbar
PF. Zustand: New.
- Softcover
Anbieter: GreatBookPricesUK, Woodford Green, Vereinigtes KönigreichGreatBookPricesUK
Verkäufer/-in kontaktierenVerkäufer/-in mit 5 SternenZustand: Neu
EUR 40,15
EUR 17,54 VersandVersand von Vereinigtes Königreich nach USAAnzahl: Mehr als 20 verfügbar
Zustand: New.
- Softcover
Anbieter: GreatBookPricesUK, Woodford Green, Vereinigtes KönigreichGreatBookPricesUK
Verkäufer/-in kontaktierenVerkäufer/-in mit 5 SternenZustand: Gebraucht - Wie neu
EUR 116,81
EUR 17,54 VersandVersand von Vereinigtes Königreich nach USAAnzahl: Mehr als 20 verfügbar
Zustand: As New. Unread book in perfect condition.
- Softcover
Anbieter: Buchpark, Trebbin, DeutschlandBuchpark
Verkäufer/-in kontaktierenVerkäufer/-in mit 5 SternenZustand: Gebraucht - Sehr gut
EUR 26,21
EUR 105,00 VersandVersand von Deutschland nach USAAnzahl: 1 verfügbar
Zustand: Sehr gut. Zustand: Sehr gut | Sprache: Englisch | Produktart: Bücher | Silicon-Germanium Heterojunction Bipolar Transistors (SiGe HBTs) are perfectly suited for high-speed electronics. Since the fabrication costs per design cycle are rapidly increasing with progressing frequency and complexity of the systems, accurate c…ompact models are essential in order to enable robust circuit design. This thesis focuses on selected important physical effects in advanced SiGe HBTs, which have been either insufficiently modeled or completely missing in conventional compact models. New compact model equations for the transfer current were derived and successfully applied to a large set of different technologies. Hereby, the "Generalized Integral Charge Control Relation" was used as a foundation. A physics-based model utilizing small-signal parameters obtained from measurements is derived for modeling the current dependent collector charge. A brief chapter about substrate effects in bipolar transistors comprises the derivation of a compact model for the bias-dependent substrate resistance as well as a proper partitioning of the substrate capacitance.New extraction methods for compact model parameters are introduced and the application of existing methods to advanced processes is discussed. The derived joint extraction method for the emitter and thermal resistance as well as a scalable model for the transfer current have been successfully applied to experimental data of fast HBTs. The derived model equations were applied to a selected very advanced SiGe HBT process developed by IHP. Highly accurate models for DC- and small-signal as well as for large-signal characteristics are presented.
- Softcover
Anbieter: Mispah books, Redhill, SURRE, Vereinigtes KönigreichMispah books
Verkäufer/-in kontaktierenVerkäufer/-in mit 4 SternenZustand: Gebraucht - Wie neu
EUR 107,19
EUR 29,23 VersandVersand von Vereinigtes Königreich nach USAAnzahl: 1 verfügbar
paperback. Zustand: Like New. LIKE NEW. SHIPS FROM MULTIPLE LOCATIONS. book.
- Softcover
Anbieter: GreatBookPrices, Columbia, MD, USAGreatBookPrices
Verkäufer/-in kontaktierenVerkäufer/-in mit 5 SternenZustand: Gebraucht - Wie neu
EUR 137,77
EUR 2,28 VersandVersand innerhalb von USAAnzahl: Mehr als 20 verfügbar
Zustand: As New. Unread book in perfect condition.
- Softcover
- Print-on-Demand
Anbieter: PBShop.store US, Wood Dale, IL, USAPBShop.store US
Verkäufer/-in kontaktierenVerkäufer/-in mit 5 SternenZustand: Neu
EUR 43,02
Versand gratisVersand innerhalb von USAAnzahl: Mehr als 20 verfügbar
PAP. Zustand: New. New Book. Shipped from UK. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000.
- Softcover
- Print-on-Demand
Anbieter: PBShop.store UK, Fairford, GLOS, Vereinigtes KönigreichPBShop.store UK
Verkäufer/-in kontaktierenVerkäufer/-in mit 5 SternenZustand: Neu
EUR 41,59
EUR 4,86 VersandVersand von Vereinigtes Königreich nach USAAnzahl: Mehr als 20 verfügbar
PAP. Zustand: New. New Book. Delivered from our UK warehouse in 4 to 14 business days. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000.
- Softcover
- Print-on-Demand
Anbieter: Majestic Books, Hounslow, Vereinigtes KönigreichMajestic Books
Verkäufer/-in kontaktierenVerkäufer/-in mit 4 SternenZustand: Neu
EUR 48,66
EUR 7,60 VersandVersand von Vereinigtes Königreich nach USAAnzahl: 4 verfügbar
Zustand: New. Print on Demand pp. 234.
Sprache: Englisch
Verlag: Tudpress Verlag Der Wissenschaften Gmbh Nov 2015, 2015
- Softcover
- Print-on-Demand
Anbieter: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, DeutschlandBuchWeltWeit Ludwig Meier e.K.
Verkäufer/-in kontaktierenVerkäufer/-in mit 5 SternenZustand: Neu
EUR 32,80
EUR 23,00 VersandVersand von Deutschland nach USAAnzahl: 2 verfügbar
Taschenbuch. Zustand: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Silicon-Germanium Heterojunction Bipolar Transistors (SiGe HBTs) are perfectly suited for high-speed electronics. Since the fabrication costs per design cycle are rapidly increasing with progressing frequency and complexity of the sys…tems, accurate compact models are essential in order to enable robust circuit design. This thesis focuses on selected important physical effects in advanced SiGe HBTs, which have been either insufficiently modeled or completely missing in conventional compact models. New compact model equations for the transfer current were derived and successfully applied to a large set of different technologies. Hereby, the 'Generalized Integral Charge Control Relation' was used as a foundation. A physics-based model utilizing small-signal parameters obtained from measurements is derived for modeling the current dependent collector charge. A brief chapter about substrate effects in bipolar transistors comprises the derivation of a compact model for the bias-dependent substrate resistance as well as a proper partitioning of the substrate capacitance.New extraction methods for compact model parameters are introduced and the application of existing methods to advanced processes is discussed. The derived joint extraction method for the emitter and thermal resistance as well as a scalable model for the transfer current have been successfully applied to experimental data of fast HBTs. The derived model equations were applied to a selected very advanced SiGe HBT process developed by IHP. Highly accurate models for DC- and small-signal as well as for large-signal characteristics are presented. 232 pp. Englisch.
- Softcover
- Print-on-Demand
Anbieter: Books Puddle, New York, NY, USABooks Puddle
Verkäufer/-in kontaktierenVerkäufer/-in mit 4 SternenZustand: Neu
EUR 54,43
EUR 3,45 VersandVersand innerhalb von USAAnzahl: 4 verfügbar
Zustand: New. Print on Demand pp. 234.
- Softcover
- Print-on-Demand
Anbieter: Biblios, frankfurt am main, HESSE, DeutschlandBiblios
Verkäufer/-in kontaktierenVerkäufer/-in mit 4 SternenZustand: Neu
EUR 50,10
EUR 9,95 VersandVersand von Deutschland nach USAAnzahl: 4 verfügbar
Zustand: New. PRINT ON DEMAND pp. 234.
- Softcover
- Print-on-Demand
Anbieter: moluna, Greven, Deutschlandmoluna
Verkäufer/-in kontaktierenVerkäufer/-in mit 5 SternenZustand: Neu
EUR 32,80
EUR 48,99 VersandVersand von Deutschland nach USAAnzahl: Mehr als 20 verfügbar
Zustand: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Silicon-Germanium Heterojunction Bipolar Transistors (SiGe HBTs) are perfectly suited for high-speed electronics. Since the fabrication costs per design cycle are rapidly increasing with progressing frequency and comple…xity of the systems, accurate compact .
Sprache: Englisch
Verlag: Tudpress Verlag Der Wissenschaften Gmbh, Tudpress Verlag Der Wissenschaften Gmbh Nov 2015, 2015
- Softcover
- Print-on-Demand
Anbieter: buchversandmimpf2000, Emtmannsberg, BAYE, Deutschlandbuchversandmimpf2000
Verkäufer/-in kontaktierenVerkäufer/-in mit 5 SternenZustand: Neu
EUR 32,80
EUR 60,00 VersandVersand von Deutschland nach USAAnzahl: 1 verfügbar
Taschenbuch. Zustand: Neu. This item is printed on demand - Print on Demand Titel. Neuware -Silicon-Germanium Heterojunction Bipolar Transistors (SiGe HBTs) are perfectly suited for high-speed electronics. Since the fabrication costs per design cycle are rapidly increasing with progressing frequency and complexity of the systems…, accurate compact models are essential in order to enable robust circuit design. This thesis focuses on selected important physical effects in advanced SiGe HBTs, which have been either insufficiently modeled or completely missing in conventional compact models. New compact model equations for the transfer current were derived and successfully applied to a large set of different technologies. Hereby, the 'Generalized Integral Charge Control Relation' was used as a foundation. A physics-based model utilizing small-signal parameters obtained from measurements is derived for modeling the current dependent collector charge. A brief chapter about substrate effects in bipolar transistors comprises the derivation of a compact model for the bias-dependent substrate resistance as well as a proper partitioning of the substrate capacitance.New extraction methods for compact model parameters are introduced and the application of existing methods to advanced processes is discussed. The derived joint extraction method for the emitter and thermal resistance as well as a scalable model for the transfer current have been successfully applied to experimental data of fast HBTs. The derived model equations were applied to a selected very advanced SiGe HBT process developed by IHP. Highly accurate models for DC- and small-signal as well as for large-signal characteristics are presented.TUDpress, Hüblerstraße 26, 01309 Dresden 232 pp. Englisch.
Sprache: Englisch
Verlag: Tudpress Verlag Der Wissenschaften Gmbh, Tudpress Verlag Der Wissenschaften Gmbh, 2015
- Softcover
- Print-on-Demand
Anbieter: AHA-BUCH GmbH, Einbeck, DeutschlandAHA-BUCH GmbH
Verkäufer/-in kontaktierenVerkäufer/-in mit 5 SternenZustand: Neu
EUR 32,80
EUR 61,71 VersandVersand von Deutschland nach USAAnzahl: 1 verfügbar
Taschenbuch. Zustand: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - Silicon-Germanium Heterojunction Bipolar Transistors (SiGe HBTs) are perfectly suited for high-speed electronics. Since the fabrication costs per design cycle are rapidly increasing with progressing frequency and complexity of the systems,… accurate compact models are essential in order to enable robust circuit design. This thesis focuses on selected important physical effects in advanced SiGe HBTs, which have been either insufficiently modeled or completely missing in conventional compact models. New compact model equations for the transfer current were derived and successfully applied to a large set of different technologies. Hereby, the 'Generalized Integral Charge Control Relation' was used as a foundation. A physics-based model utilizing small-signal parameters obtained from measurements is derived for modeling the current dependent collector charge. A brief chapter about substrate effects in bipolar transistors comprises the derivation of a compact model for the bias-dependent substrate resistance as well as a proper partitioning of the substrate capacitance.New extraction methods for compact model parameters are introduced and the application of existing methods to advanced processes is discussed. The derived joint extraction method for the emitter and thermal resistance as well as a scalable model for the transfer current have been successfully applied to experimental data of fast HBTs. The derived model equations were applied to a selected very advanced SiGe HBT process developed by IHP. Highly accurate models for DC- and small-signal as well as for large-signal characteristics are presented.
- Softcover
- Print-on-Demand
Anbieter: preigu, Osnabrück, Deutschlandpreigu
Verkäufer/-in kontaktierenVerkäufer/-in mit 5 SternenZustand: Neu
EUR 32,80
EUR 70,00 VersandVersand von Deutschland nach USAAnzahl: 5 verfügbar
Taschenbuch. Zustand: Neu. Advanced Modeling of Silicon-Germanium Heterojunction Bipolar Transistors | Andreas Pawlak | Taschenbuch | 232 S. | Englisch | 2015 | TUDpress Verlag der Wissenschaften GmbH | EAN 9783959080286 | Verantwortliche Person für die EU: TUDpress Verlag der Wissenschaften Dresden GmbH, Bergstr. 70, 01069 Dres…den, mail[at]tudpress[dot]de | Anbieter: preigu Print on Demand.
