Sprache: Englisch
Verlag: VDM Verlag Dr. Mueller Aktiengesellschaft & Co. KG, 2011
ISBN 10: 3845404345 ISBN 13: 9783845404349
Anbieter: Books Puddle, New York, NY, USA
Zustand: New. pp. 136.
Sprache: Englisch
Verlag: LAP LAMBERT Academic Publishing Jul 2011, 2011
ISBN 10: 3845404345 ISBN 13: 9783845404349
Anbieter: buchversandmimpf2000, Emtmannsberg, BAYE, Deutschland
Taschenbuch. Zustand: Neu. Neuware -Continuous downscaling of MOSFET devices, below sub 100 nm, has led to many challenges in the field of VLSI. Few interesting challenging problems addressed in this book are: MOSFET parameter extraction, Automatic circuit design, and Design of circuits in novel device structures. The increasing complexity of MOSFET models to capture various SCEs has made the parameter extraction a difficult task. Analog circuit design has also become difficult due to increased complexity of MOSFET models, process variations, supply voltage variations, and need of low-power architectures. FinFET device, which has less SCEs, is emerging as a strong candidate to replace planar MOSFETs. However, compact models for FinFETs are still under research and not available for circuit simulation. This book demonstrates potential applications of evolutionary algorithms such as PSO algorithm to address the issues of MOSFET parameter extraction and automatic circuit design. It also highlights the use of look-up table (LUT) approach for simulation of circuits in novel devices. This book will be useful to students, researchers, and practitioners working in CMOS circuits and devices.Books on Demand GmbH, Überseering 33, 22297 Hamburg 136 pp. Englisch.
Sprache: Englisch
Verlag: LAP LAMBERT Academic Publishing, 2011
ISBN 10: 3845404345 ISBN 13: 9783845404349
Anbieter: preigu, Osnabrück, Deutschland
Taschenbuch. Zustand: Neu. Applications of Evolutionary Algorithms in VLSI | Parameter Extraction of Advanced MOSFET Models and Automatic Analog Circuit Design | Rajesh A. Thakker (u. a.) | Taschenbuch | 136 S. | Englisch | 2011 | LAP LAMBERT Academic Publishing | EAN 9783845404349 | Verantwortliche Person für die EU: BoD - Books on Demand, In de Tarpen 42, 22848 Norderstedt, info[at]bod[dot]de | Anbieter: preigu.
Sprache: Englisch
Verlag: LAP LAMBERT Academic Publishing, 2011
ISBN 10: 3845404345 ISBN 13: 9783845404349
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In den WarenkorbPaperback. Zustand: Like New. LIKE NEW. SHIPS FROM MULTIPLE LOCATIONS. book.
Sprache: Englisch
Verlag: LAP LAMBERT Academic Publishing Jul 2011, 2011
ISBN 10: 3845404345 ISBN 13: 9783845404349
Anbieter: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Deutschland
Taschenbuch. Zustand: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Continuous downscaling of MOSFET devices, below sub 100 nm, has led to many challenges in the field of VLSI. Few interesting challenging problems addressed in this book are: MOSFET parameter extraction, Automatic circuit design, and Design of circuits in novel device structures. The increasing complexity of MOSFET models to capture various SCEs has made the parameter extraction a difficult task. Analog circuit design has also become difficult due to increased complexity of MOSFET models, process variations, supply voltage variations, and need of low-power architectures. FinFET device, which has less SCEs, is emerging as a strong candidate to replace planar MOSFETs. However, compact models for FinFETs are still under research and not available for circuit simulation. This book demonstrates potential applications of evolutionary algorithms such as PSO algorithm to address the issues of MOSFET parameter extraction and automatic circuit design. It also highlights the use of look-up table (LUT) approach for simulation of circuits in novel devices. This book will be useful to students, researchers, and practitioners working in CMOS circuits and devices. 136 pp. Englisch.
Sprache: Englisch
Verlag: VDM Verlag Dr. Mueller Aktiengesellschaft & Co. KG, 2011
ISBN 10: 3845404345 ISBN 13: 9783845404349
Anbieter: Majestic Books, Hounslow, Vereinigtes Königreich
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In den WarenkorbZustand: New. Print on Demand pp. 136 2:B&W 6 x 9 in or 229 x 152 mm Perfect Bound on Creme w/Gloss Lam.
Sprache: Englisch
Verlag: VDM Verlag Dr. Mueller Aktiengesellschaft & Co. KG, 2011
ISBN 10: 3845404345 ISBN 13: 9783845404349
Anbieter: Biblios, Frankfurt am main, HESSE, Deutschland
Zustand: New. PRINT ON DEMAND pp. 136.
Sprache: Englisch
Verlag: LAP LAMBERT Academic Publishing, 2011
ISBN 10: 3845404345 ISBN 13: 9783845404349
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In den WarenkorbZustand: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Thakker Rajesh A.Rajesh A. Thakker received B. E. degree in Electronics and Communication Engineering from Gujarat University in 1993, and M. Tech. and Ph.D. in Electrical Engineering from Indian Institute of Technology Bombay in 200.
Sprache: Englisch
Verlag: LAP LAMBERT Academic Publishing, 2011
ISBN 10: 3845404345 ISBN 13: 9783845404349
Anbieter: AHA-BUCH GmbH, Einbeck, Deutschland
Taschenbuch. Zustand: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - Continuous downscaling of MOSFET devices, below sub 100 nm, has led to many challenges in the field of VLSI. Few interesting challenging problems addressed in this book are: MOSFET parameter extraction, Automatic circuit design, and Design of circuits in novel device structures. The increasing complexity of MOSFET models to capture various SCEs has made the parameter extraction a difficult task. Analog circuit design has also become difficult due to increased complexity of MOSFET models, process variations, supply voltage variations, and need of low-power architectures. FinFET device, which has less SCEs, is emerging as a strong candidate to replace planar MOSFETs. However, compact models for FinFETs are still under research and not available for circuit simulation. This book demonstrates potential applications of evolutionary algorithms such as PSO algorithm to address the issues of MOSFET parameter extraction and automatic circuit design. It also highlights the use of look-up table (LUT) approach for simulation of circuits in novel devices. This book will be useful to students, researchers, and practitioners working in CMOS circuits and devices.