compact modeling (137 Ergebnisse)

Taschenbuch. Zustand: Neu. Physics-based compact modeling and parameter extraction for InP heterojunction bipolar transistors with special emphasis on material-specific physical effects and geometry scaling | Dissertation | Tobias Nardmann | Taschenbuch | 244 S. | Englisch | 2017 | Books on Demand GmbH | EAN 9783744872805 | Verantwortliche Person für die EU: BoD - Books on Demand, In de Tarpen 42, 22848 Norderstedt, info[at]bod[dot]de | Anbieter: preigu.

1st edition 2017. 23.5 cm x 15.5 cm, 0 g. XVI, 331 p. Hardcover. Versand aus Deutschland / We dispatch from Germany via Air Mail. Einband bestoßen, daher Mängelexemplar gestempelt, sonst sehr guter Zustand. Imperfect copy due to slightly bumped cover, apart from this in very good condition. Stamped. Sprache: Englisch.

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Paperback or Softback. Zustand: New. Physics-based compact modeling and parameter extraction for InP heterojunction bipolar transistors with special emphasis on material-specific physical 0.65. Book.

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Taschenbuch. Zustand: Neu. Neuware -The book deals with the numerical simulation of compact heat exchangers that are primarily used in dissipating heat generated by electronic components and assemblies. The forced-convective cooling of a horizontally based pin-fin assembly has been investigated for the pressure drop and heat transfer characteristics. The effect of pin fin¿s thermal conductivity on the performance of heat exchanger is investigated by considering different fin materials. Subsequently the computations for different fin spacing along the stream-wise direction were carried out. The thermal and fluid-dynamic characteristics along the computational domain are discussed in detail. Finally the performance characteristics of triangular fin heat exchangers are studied and a comparison was made with circular pin fins. The results showed that circular pin fins perform better than triangular pin fins with less pressure drop. The book should be especially useful for the engineers and researchers working in the field of conjugate heat transfer and compact heat exchangers.Books on Demand GmbH, Überseering 33, 22297 Hamburg 96 pp. Englisch.

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Hardcover. Zustand: Used: Good. 2004 hardcover no dj as issued xlibrary copy withdrawn stamp on edge of pages/ in book clean text Kluwer Academic Publ. 129 pages::: J-10.

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Taschenbuch. Zustand: Neu. Neuware -The nanoelectronics world is moving forward at incredible speed, and technology keeps improving overnight. One can no longer afford to spend months or even years evaluating a future technological node, thus the need for a robust evaluation system has arisen. Numerical ways of modeling the new device architectures, apart from precision, offer very little in terms of performance, and are being replaced by new analytical tools, focus on providing exactly that - speed and accuracy. This work has been conceived to cover precisely these aspects. The models described here are physical models, with very few adjustment parameters, that are usually replaceable with values extracted from experimental measurements. They have the advantage of being easily incorporated into circuit simulators, which allow designers to unleash the full capabilities of the design software to create new devices and applications.Books on Demand GmbH, Überseering 33, 22297 Hamburg 256 pp. Englisch.

Taschenbuch. Zustand: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - The trend in modern electronics towards ever higher frequencies of operation and complexity as well as power efficiency requires a whole palette of different technologies to be available to circuit designers for various applications. While MOSFETs dominate thedigital world, they have apparently reached their top analogue performance around the 65nm node. Emerging technologies such as CNTFETs offer excellent properties such as very high linearity and speed in theory, but have yet to deliver on those promises in practice.Heterojunction bipolar transistors (HBTs), on the other hand, offer a number of key advantages over competing technologies: A very high transconductance and therefore a relatively low impact of a load impedance on the transistor operation, a high transit frequency and maximum frequency of oscillation at a comparatively relaxed feature size and favorable noise characteristics.Like all semiconductor devices, HBTs can be fabricated in diferent semiconductor materials. The most common are SiGe HBTs, which even today reach values above (ft; fmax) = (300; 500) GHz and are projected to eventually reach the THz range. However, HBTs fabricated in III-V materials offer a versatile alternative. Depending on the materials that are used, III-V HBTs can be the fastest available bipolar transistors (competing only with HEMTs, also fabricated in III-V materials, for the title of fastest available transistors overall), offer very high breakdown voltages and therefore excellent power-handling capability, show good linearity or low noise figures at high frequencies. Typical applications for III-V HBTs include handset PAs, high-effciency and high-speed amplifiers as well as high-speed oscillators . Overall, III-V-based HBTs and especially InP HBTs are excellent candidates for future high-speed communication circuits.The goal of this work is to include important effects occurring in III-V materials in a compact model for circuit design in a physical, yet intuitive way in order to aid deployment of III-V HBTs in prototypes and products. Additionally, the parameter extraction procedure for the compact model is described and analyzed in detail so an accurate, physics-based parameter set can be obtained. Finally, the agreement of the model with measurements is demonstrated for three different III-V HBT processes.

Zustand: New. pp. 156.

Zustand: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. The trend in modern electronics towards ever higher frequencies of operation and complexity as well as power efficiency requires a whole palette of different technologies to be available to circuit designers for various applications. While MOSFETs dominate .

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Taschenbuch. Zustand: Neu. Neuware - The explosive growth of wireless communication systems has led to an increasing demand for the integration of embedded functions to compact low-cost RF front ends. As a result, the size of the antenna continues to be a limiting factor in this quest. For years, designers and engineers have researched methods of decreasing the size of the antenna, however, these methods are not always commercial viable. Therefore, I wrote this book with the intention to further educate the reader on the concepts and methods that can be used to miniaturize designs from WLAN to millimeter-wave frequencies without compromising important performance characteristics, such as gain, impedance bandwidth, and front-to-back ratio. The concepts presented in this book are not complex and can be practically integrated with commercial devices through the use of planar configurations. Finally, I wanted to present some insight on how design parameters of planar antennas could be used in other fields, such as computer science. I hope you enjoy!

Paperback. Zustand: Brand New. 76 pages. 8.66x5.91x0.18 inches. In Stock.

Paperback. Zustand: Brand New. 76 pages. 8.66x5.91x0.18 inches. In Stock.

Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - Floating Gate Devices: Operation and Compact Modeling focuses on standard operations and compact modeling of memory devices based on Floating Gate architecture. Floating Gate devices are the building blocks of Flash, EPROM, EEPROM memories. Flash memories, which are the most versatile nonvolatile memories, are widely used to store code (BIOS, Communication protocol, Identification code,) and data (solid-state Hard Disks, Flash cards for digital cameras,). The reader, who deals with Floating Gate memory devices at different levels - from test-structures to complex circuit design - will find an essential explanation on device physics and technology, and also circuit issues which must be fully understood while developing a new device. Device engineers will use this book to find simplified models to design new process steps or new architectures. Circuit designers will find the basic theory to understand the use of compact models to validate circuits against process variations and to evaluate the impact of parameter variations on circuit performances. Floating Gate Devices: Operation and Compact Modeling is meant to be a basic tool for designing the next generation of memory devices based on FG technologies.

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Zustand: New. In.

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Taschenbuch. Zustand: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -The trend in modern electronics towards ever higher frequencies of operation and complexity as well as power efficiency requires a whole palette of different technologies to be available to circuit designers for various applications. While MOSFETs dominate thedigital world, they have apparently reached their top analogue performance around the 65nm node. Emerging technologies such as CNTFETs offer excellent properties such as very high linearity and speed in theory, but have yet to deliver on those promises in practice.Heterojunction bipolar transistors (HBTs), on the other hand, offer a number of key advantages over competing technologies: A very high transconductance and therefore a relatively low impact of a load impedance on the transistor operation, a high transit frequency and maximum frequency of oscillation at a comparatively relaxed feature size and favorable noise characteristics.Like all semiconductor devices, HBTs can be fabricated in diferent semiconductor materials. The most common are SiGe HBTs, which even today reach values above (ft; fmax) = (300; 500) GHz and are projected to eventually reach the THz range. However, HBTs fabricated in III-V materials offer a versatile alternative. Depending on the materials that are used, III-V HBTs can be the fastest available bipolar transistors (competing only with HEMTs, also fabricated in III-V materials, for the title of fastest available transistors overall), offer very high breakdown voltages and therefore excellent power-handling capability, show good linearity or low noise figures at high frequencies. Typical applications for III-V HBTs include handset PAs, high-effciency and high-speed amplifiers as well as high-speed oscillators . Overall, III-V-based HBTs and especially InP HBTs are excellent candidates for future high-speed communication circuits.The goal of this work is to include important effects occurring in III-V materials in a compact model for circuit design in a physical, yet intuitive way in order to aid deployment of III-V HBTs in prototypes and products. Additionally, the parameter extraction procedure for the compact model is described and analyzed in detail so an accurate, physics-based parameter set can be obtained. Finally, the agreement of the model with measurements is demonstrated for three different III-V HBT processes. 244 pp. Englisch.