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In den WarenkorbHardback. Zustand: New. New copy - Usually dispatched within 4 working days. 794.
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In den WarenkorbBuch. Zustand: Neu. Neuware - Modern, large-scale analog integrated circuits (ICs) are essentially composed of metal-oxide semiconductor (MOS) transistors and their interconnections. As technology scales down to deep sub-micron dimensions and supply voltage decreases to reduce power consumption, these complex analog circuits are even more dependent on the exact behavior of each transistor. High-performance analog circuit design requires a very detailed model of the transistor, describing accurately its static and dynamic behaviors, its noise and matching limitations and its temperature variations. The charge-based EKV (Enz-Krummenacher-Vittoz) MOS transistor model for IC design has been developed to provide a clear understanding of the device properties, without the use of complicated equations. All the static, dynamic, noise, non-quasi-static models are completely described in terms of the inversion charge at the source and at the drain taking advantage of the symmetry of the device. Thanks to its hierarchical structure, the model offers several coherent description levels, from basic hand calculation equations to complete computer simulation model. It is also compact, with a minimum number of process-dependant device parameters.Written by its developers, this book provides a comprehensive treatment of the EKV charge-based model of the MOS transistor for the design and simulation of low-power analog and RF ICs. Clearly split into three parts, the authors systematically examine:\* the basic long-channel intrinsic charge-based model, including all the fundamental aspects of the EKV MOST model such as the basic large-signal static model, the noise model, and a discussion of temperature effects and matching properties;\* the extended charge-based model, presenting important information for understanding the operation of deep-submicron devices;\* the high-frequency model, setting out a complete MOS transistor model required for designing RF CMOS integrated circuits.Practising engineers and circuit designers in the semiconductor device and electronics systems industry will find this book a valuable guide to the modelling of MOS transistors for integrated circuits. It is also a useful reference for advanced students in electrical and computer engineering.
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In den WarenkorbZustand: New. As technology scales down to sub-micron dimensions the modelling of MOS device operation becomes of greater concern. The EKV model has been developed to facilitate the modelling and simulation of low voltage devices for application in low power semiconductor technologies. Num Pages: 328 pages, Illustrations. BIC Classification: TJ. Category: (P) Professional & Vocational. Dimension: 251 x 173 x 24. Weight in Grams: 764. . 2006. 1st Edition. Hardcover. . . . .
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In den WarenkorbZustand: New. As technology scales down to sub-micron dimensions the modelling of MOS device operation becomes of greater concern. The EKV model has been developed to facilitate the modelling and simulation of low voltage devices for application in low power semiconductor technologies. Num Pages: 328 pages, Illustrations. BIC Classification: TJ. Category: (P) Professional & Vocational. Dimension: 251 x 173 x 24. Weight in Grams: 764. . 2006. 1st Edition. Hardcover. . . . . Books ship from the US and Ireland.
Verlag: Engineering Science Reference, 2016
ISBN 10: 1522501908 ISBN 13: 9781522501909
Sprache: Englisch
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In den Warenkorbhardcover. Zustand: New. In shrink wrap. Looks like an interesting title!
Verlag: Engineering Science Reference, 2016
ISBN 10: 1522501908 ISBN 13: 9781522501909
Sprache: Englisch
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Verlag: Engineering Science Reference, 2016
ISBN 10: 1522501908 ISBN 13: 9781522501909
Sprache: Englisch
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In den WarenkorbGebunden. Zustand: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Analyses various traditional and modern low power techniques for integrated circuit design in addition to the limiting factors of existing techniques and methods for optimization. It presents a research-based discussion of the technicalities involved in the.
Verlag: Engineering Science Reference, 2016
ISBN 10: 1522501908 ISBN 13: 9781522501909
Sprache: Englisch
Anbieter: AHA-BUCH GmbH, Einbeck, Deutschland
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In den WarenkorbBuch. Zustand: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - Very Large Scale Integration (VLSI) Systems refer to the latest development in computer microchips which are created by integrating hundreds of thousands of transistors into one chip. Emerging research in this area has the potential to uncover further applications for VSLI technologies in addition to system advancements. Design and Modeling of Low Power VLSI Systems analyzes various traditional and modern low power techniques for integrated circuit design in addition to the limiting factors of existing techniques and methods for optimization. Through a research-based discussion of the technicalities involved in the VLSI hardware development process cycle, this book is a useful resource for researchers, engineers, and graduate-level students in computer science and engineering.