Dielectric work function engineered von lakshmi priya (8 Ergebnisse)
- Softcover
Anbieter: moluna, Greven, Deutschlandmoluna
Verkäufer/-in kontaktierenVerkäufer/-in mit 5 SternenZustand: Neu
EUR 59,05
EUR 48,99 VersandVersand von Deutschland nach USAAnzahl: Mehr als 20 verfügbar
Zustand: New.
- Softcover
Anbieter: Books Puddle, New York, NY, USABooks Puddle
Verkäufer/-in kontaktierenVerkäufer/-in mit 4 SternenZustand: Neu
EUR 110,87
EUR 3,45 VersandVersand innerhalb von USAAnzahl: 4 verfügbar
Zustand: New.
- Softcover
- Print-on-Demand
Anbieter: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, DeutschlandBuchWeltWeit Ludwig Meier e.K.
Verkäufer/-in kontaktierenVerkäufer/-in mit 5 SternenZustand: Neu
EUR 71,90
EUR 23,00 VersandVersand von Deutschland nach USAAnzahl: 2 verfügbar
Taschenbuch. Zustand: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -The perpetual downscaling of devices has achieved higher packaging density and faster switching performance. As the physical dimensions of FET device are scaled down consistently, many undesirable Short Channel Effects (SCEs) and subt…hreshold leakage current becomes more dominant and deteriorates the performance of the devices. The major driving force for the proposed book is to overcome all these above limitations with advancements in the materials science and semiconductor industry. Doping-Less Tunnel FET's (Junctionless Tunnel FET - JLTFET) have evolved as the most gratifying candidate. The absence of gradient doping concentration makes the fabrication process much simpler and offers low thermal budget. The high-K gate stack engineered device overcomes the SCEs caused by the ultrathin silicon devices. This book is designed to formulate a subthreshold model for Dual Metal Dielectric Engineered Doping-Less Tunnel FET by solving a two-dimensional Poisson's equation using Parabolic approximation method. Also, the impact of different high-K gate oxide materials with Silicon dioxide is also studied using TCAD Sentaurus device simulator. 200 pp. Englisch.
- Softcover
- Print-on-Demand
Anbieter: Majestic Books, Hounslow, Vereinigtes KönigreichMajestic Books
Verkäufer/-in kontaktierenVerkäufer/-in mit 4 SternenZustand: Neu
EUR 113,28
EUR 7,60 VersandVersand von Vereinigtes Königreich nach USAAnzahl: 4 verfügbar
Zustand: New. Print on Demand.
- Softcover
- Print-on-Demand
Anbieter: Biblios, frankfurt am main, HESSE, DeutschlandBiblios
Verkäufer/-in kontaktierenVerkäufer/-in mit 4 SternenZustand: Neu
EUR 116,32
EUR 9,95 VersandVersand von Deutschland nach USAAnzahl: 4 verfügbar
Zustand: New. PRINT ON DEMAND.
- Softcover
- Print-on-Demand
Anbieter: preigu, Osnabrück, Deutschlandpreigu
Verkäufer/-in kontaktierenVerkäufer/-in mit 5 SternenZustand: Neu
EUR 60,35
EUR 70,00 VersandVersand von Deutschland nach USAAnzahl: 5 verfügbar
Taschenbuch. Zustand: Neu. Dielectric and Work Function Engineered Doping-Less Tunnel FET | Subthreshold Modeling, Simulation and Analysis | G. Lakshmi Priya (u. a.) | Taschenbuch | Englisch | 2020 | LAP LAMBERT Academic Publishing | EAN 9786202672030 | Verantwortliche Person für die EU: LAP Lambert Academic Publishing, Brivibas… Gatve 197, 1039 RIGA, LETTLAND, customerservice[at]vdm-vsg[dot]de | Anbieter: preigu Print on Demand.
- Softcover
- Print-on-Demand
Anbieter: buchversandmimpf2000, Emtmannsberg, BAYE, Deutschlandbuchversandmimpf2000
Verkäufer/-in kontaktierenVerkäufer/-in mit 5 SternenZustand: Neu
EUR 71,90
EUR 60,00 VersandVersand von Deutschland nach USAAnzahl: 1 verfügbar
Taschenbuch. Zustand: Neu. This item is printed on demand - Print on Demand Titel. Neuware -The perpetual downscaling of devices has achieved higher packaging density and faster switching performance. As the physical dimensions of FET device are scaled down consistently, many undesirable Short Channel Effects (SCEs) and subthres…hold leakage current becomes more dominant and deteriorates the performance of the devices. The major driving force for the proposed book is to overcome all these above limitations with advancements in the materials science and semiconductor industry. Doping-Less Tunnel FET's (Junctionless Tunnel FET - JLTFET) have evolved as the most gratifying candidate. The absence of gradient doping concentration makes the fabrication process much simpler and offers low thermal budget. The high-K gate stack engineered device overcomes the SCEs caused by the ultrathin silicon devices. This book is designed to formulate a subthreshold model for Dual Metal Dielectric Engineered Doping-Less Tunnel FET by solving a two-dimensional Poisson's equation using Parabolic approximation method. Also, the impact of different high-K gate oxide materials with Silicon dioxide is also studied using TCAD Sentaurus device simulator.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 200 pp. Englisch.
- Softcover
- Print-on-Demand
Anbieter: AHA-BUCH GmbH, Einbeck, DeutschlandAHA-BUCH GmbH
Verkäufer/-in kontaktierenVerkäufer/-in mit 5 SternenZustand: Neu
EUR 72,76
EUR 61,58 VersandVersand von Deutschland nach USAAnzahl: 1 verfügbar
Taschenbuch. Zustand: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - The perpetual downscaling of devices has achieved higher packaging density and faster switching performance. As the physical dimensions of FET device are scaled down consistently, many undesirable Short Channel Effects (SCEs) and subthresh…old leakage current becomes more dominant and deteriorates the performance of the devices. The major driving force for the proposed book is to overcome all these above limitations with advancements in the materials science and semiconductor industry. Doping-Less Tunnel FET's (Junctionless Tunnel FET - JLTFET) have evolved as the most gratifying candidate. The absence of gradient doping concentration makes the fabrication process much simpler and offers low thermal budget. The high-K gate stack engineered device overcomes the SCEs caused by the ultrathin silicon devices. This book is designed to formulate a subthreshold model for Dual Metal Dielectric Engineered Doping-Less Tunnel FET by solving a two-dimensional Poisson's equation using Parabolic approximation method. Also, the impact of different high-K gate oxide materials with Silicon dioxide is also studied using TCAD Sentaurus device simulator.
