nanowire electronics (32 Ergebnisse)

Zustand: New.

Paperback or Softback. Zustand: New. Towards Reconfigurable Electronics by Functionality-Enhanced Circuits and Germanium Nanowire Devices. Book.

Zustand: As New. Unread book in perfect condition.

VIII, 393 p. Hardcover. Versand aus Deutschland / We dispatch from Germany via Air Mail. Einband bestoßen, daher Mängelexemplar gestempelt, sonst sehr guter Zustand. Imperfect copy due to slightly bumped cover, apart from this in very good condition. Stamped. Nanostructure Science and Technology. Sprache: Englisch.

Zustand: New. In.

Paperback. Zustand: New.

Zustand: New.

Zustand: As New. Unread book in perfect condition.

Taschenbuch. Zustand: Neu. Towards Reconfigurable Electronics by Functionality-Enhanced Circuits and Germanium Nanowire Devices | Jens Trommer | Taschenbuch | 164 S. | Englisch | 2017 | Books on Demand GmbH | EAN 9783744810555 | Verantwortliche Person für die EU: BoD - Books on Demand, In de Tarpen 42, 22848 Norderstedt, info[at]bod[dot]de | Anbieter: preigu.

Taschenbuch. Zustand: Neu. Top-down fabrication of reconfigurable nanowire-electronics | Maik Simon | Taschenbuch | Englisch | 2022 | Bookmundo Direct | EAN 9789403673028 | Verantwortliche Person für die EU: Bookmundo, Delftsestraat 33, 3013 AE ROTTERDAM, NIEDERLANDE, info[at]bookmundo[dot]com | Anbieter: preigu.

Zustand: New. In.

Zustand: Hervorragend. Zustand: Hervorragend | Sprache: Englisch | Produktart: Bücher | Reconfigurable FETs (RFETs) can be toggled - unlike conventional CMOS transistors - between p- and n-type behavior in runtime. This allows to create compact and delay-efficient logic gates that can switch their functionality dynamically. RFETs are based on an intrinsic semiconductor channel with Schottky junctions at source and drain and have at least two separate gates to control polarity and on/off state. Additional independent gates can enhance the versatility and switching slopes of the transistor. This thesis demonstrates the top-down fabrication and electrical characteristics of silicon-based RFETs with multiple independent gates. All processes required for forming silicon nanowires, omega-gate layout and nickel silicide contacts are described in detail. Further, the various influences of processing conditions, material stacks and geometry on the growth of nickel silicides in nanowires are examined. Lastly, the electrical characteristics of multiple RFETs with two to four individual gates are discussed and compared to those of prior-art RFET implementations.

Zustand: New.

Hardcover. Zustand: Brand New. 404 pages. 9.25x6.10x1.10 inches. In Stock.

Buch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book gives a comprehensive overview of recent advances in developing nanowires for building various kinds of electronic devices. Specifically the applications of nanowires in detectors, sensors, circuits, energy storage and conversion, etc., are reviewed in detail by the experts in this field. Growth methods of different kinds of nanowires are also covered when discussing the electronic applications. Through discussing these cutting edge researches, the future directions of nanowire electronics are identified.

Hardcover. Zustand: New. New. book.

PAP. Zustand: New. New Book. Shipped from UK. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000.

PAP. Zustand: New. New Book. Delivered from our UK warehouse in 4 to 14 business days. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000.

Taschenbuch. Zustand: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -For more than five decades digital integrated circuits have become more efficient with every technology generation. This trend has been mainly driven by the downscaling of the transistor size, which goes hand in hand with a lower cost per function. However, with classical miniaturization reaching towards the size of a few atoms, the quest for alternative solutions to increase the system functionality without the need for scaling down device dimension has risen. One particular promising solution to this question are polarity-controllable transistors, which merge the electrical properties of unipolar n- and p-type field effect transistors into a single universal device type. The novel device concept relies on the unique properties of sharp gated Schottky junctions within semiconductor nano-channels to adjust the charge carrier flow. A volatile electrical programming signal is used to set the devices into a state of either electron or hole transport. It is envisioned that these devices can be employed to enable a fine-grain dynamical reconfiguration of circuit elements, which would provide a higher functionality with the identical amount of hardware building blocks. The scope of this work is to advance the state of the art on polarity-controllable devices on the material, device and circuit level. 164 pp. Englisch.

Taschenbuch. Zustand: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Reconfigurable FETs (RFETs) can be toggled - unlike conventional CMOS transistors - between p- and n-type behavior in runtime. This allows to create compact and delay-efficient logic gates that can switch their functionality dynamically. RFETs are based on an intrinsic semiconductor channel with Schottky junctions at source and drain and have at least two separate gates to control polarity and on/off state. Additional independent gates can enhance the versatility and switching slopes of the transistor.This thesis demonstrates the top-down fabrication and electrical characteristics of silicon-based RFETs with multiple independent gates. All processes required for forming silicon nanowires, omega-gate layout and nickel silicide contacts are described in detail. Further, the various influences of processing conditions, material stacks and geometry on the growth of nickel silicides in nanowires are examined. Lastly, the electrical characteristics of multiple RFETs with two to four individual gates are discussed and compared to those of prior-art RFET implementations. 188 pp. Englisch.

Zustand: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. For more than five decades digital integrated circuits have become more efficient with every technology generation. This trend has been mainly driven by the downscaling of the transistor size, which goes hand in hand with a lower cost per function. However,.

Zustand: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Reconfigurable FETs (RFETs) can be toggled - unlike conventional CMOS transistors - between p- and n-type behavior in runtime. This allows to create compact and delay-efficient logic gates that can switch their functionality dynamically. RFETs are based on .

Taschenbuch. Zustand: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - For more than five decades digital integrated circuits have become more efficient with every technology generation. This trend has been mainly driven by the downscaling of the transistor size, which goes hand in hand with a lower cost per function. However, with classical miniaturization reaching towards the size of a few atoms, the quest for alternative solutions to increase the system functionality without the need for scaling down device dimension has risen. One particular promising solution to this question are polarity-controllable transistors, which merge the electrical properties of unipolar n- and p-type field effect transistors into a single universal device type. The novel device concept relies on the unique properties of sharp gated Schottky junctions within semiconductor nano-channels to adjust the charge carrier flow. A volatile electrical programming signal is used to set the devices into a state of either electron or hole transport. It is envisioned that these devices can be employed to enable a fine-grain dynamical reconfiguration of circuit elements, which would provide a higher functionality with the identical amount of hardware building blocks. The scope of this work is to advance the state of the art on polarity-controllable devices on the material, device and circuit level.

Zustand: new. Questo è un articolo print on demand.

Taschenbuch. Zustand: Neu. This item is printed on demand - Print on Demand Titel. Neuware Books on Demand GmbH, Überseering 33, 22297 Hamburg 188 pp. Englisch.

Taschenbuch. Zustand: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - Reconfigurable FETs (RFETs) can be toggled - unlike conventional CMOS transistors - between p- and n-type behavior in runtime. This allows to create compact and delay-efficient logic gates that can switch their functionality dynamically. RFETs are based on an intrinsic semiconductor channel with Schottky junctions at source and drain and have at least two separate gates to control polarity and on/off state. Additional independent gates can enhance the versatility and switching slopes of the transistor.This thesis demonstrates the top-down fabrication and electrical characteristics of silicon-based RFETs with multiple independent gates. All processes required for forming silicon nanowires, omega-gate layout and nickel silicide contacts are described in detail. Further, the various influences of processing conditions, material stacks and geometry on the growth of nickel silicides in nanowires are examined. Lastly, the electrical characteristics of multiple RFETs with two to four individual gates are discussed and compared to those of prior-art RFET implementations.

Buch. Zustand: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This book gives a comprehensive overview of recent advances in developing nanowires for building various kinds of electronic devices. Specifically the applications of nanowires in detectors, sensors, circuits, energy storage and conversion, etc., are reviewed in detail by the experts in this field. Growth methods of different kinds of nanowires are also covered when discussing the electronic applications. Through discussing these cutting edge researches, the future directions of nanowire electronics are identified. 404 pp. Englisch.

Gebunden. Zustand: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Provides a comprehensive overview of the current electronic applications of nanowires, emphasizing their practicality and utility in day-to-day operationCovers various growth techniques of semiconducting nanowiresIdentifies the future dire.

Zustand: New. Print on Demand.

Buch. Zustand: Neu. Nanowire Electronics | Guozhen Shen (u. a.) | Buch | Nanostructure Science and Technology | viii | Englisch | 2018 | Springer | EAN 9789811323652 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu Print on Demand.