Verlag: World Scientific Pub Co Inc, 2008
ISBN 10: 9812568646 ISBN 13: 9789812568649
Sprache: Englisch
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Verlag: World Scientific Pub Co Inc, 2008
ISBN 10: 9812568646 ISBN 13: 9789812568649
Sprache: Englisch
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Verlag: World Scientific Publishing Co Pte Ltd, SG, 2008
ISBN 10: 9813203315 ISBN 13: 9789813203310
Sprache: Englisch
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In den WarenkorbPaperback. Zustand: New. This volume provides a timely description of the latest compact MOS transistor models for circuit simulation. The first generation BSIM3 and BSIM4 models that have dominated circuit simulation in the last decade are no longer capable of characterizing all the important features of modern sub-100nm MOS transistors. This book discusses the second generation MOS transistor models that are now in urgent demand and being brought into the initial phase of manufacturing applications. It considers how the models are to include the complete drift-diffusion theory using the surface potential variable in the MOS transistor channel in order to give one characterization equation.
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In den WarenkorbPaperback. Zustand: Brand New. 380 pages. 9.00x6.00x0.86 inches. In Stock.
Verlag: World Scientific Pub Co Inc, 2008
ISBN 10: 9812568646 ISBN 13: 9789812568649
Sprache: Englisch
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Verlag: WORLD SCIENTIFIC PUB CO INC, 2008
ISBN 10: 9812568646 ISBN 13: 9789812568649
Sprache: Englisch
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Zustand: Gut. Zustand: Gut | Seiten: 380 | Sprache: Englisch | Produktart: Bücher | This volume provides a timely description of the latest compact MOS transistor models for circuit simulation. The first generation BSIM3 and BSIM4 models that have dominated circuit simulation in the last decade are no longer capable of characterizing all the important features of modern sub-100nm MOS transistors. This book discusses the second generation MOS transistor models that are now in urgent demand and being brought into the initial phase of manufacturing applications. It considers how the models are to include the complete drift-diffusion theory using the surface potential variable in the MOS transistor channel in order to give one characterization equation.
Verlag: World Scientific Publishing Co Pte Ltd, SG, 2008
ISBN 10: 9813203315 ISBN 13: 9789813203310
Sprache: Englisch
Anbieter: Rarewaves.com UK, London, Vereinigtes Königreich
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In den WarenkorbPaperback. Zustand: New. This volume provides a timely description of the latest compact MOS transistor models for circuit simulation. The first generation BSIM3 and BSIM4 models that have dominated circuit simulation in the last decade are no longer capable of characterizing all the important features of modern sub-100nm MOS transistors. This book discusses the second generation MOS transistor models that are now in urgent demand and being brought into the initial phase of manufacturing applications. It considers how the models are to include the complete drift-diffusion theory using the surface potential variable in the MOS transistor channel in order to give one characterization equation.
Verlag: World Scientific Pub Co Inc, 2008
ISBN 10: 9812568646 ISBN 13: 9789812568649
Sprache: Englisch
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ISBN 10: 9812568646 ISBN 13: 9789812568649
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ISBN 10: 9812568646 ISBN 13: 9789812568649
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Verlag: World Scientific Pub Co Inc, 2008
ISBN 10: 9812568646 ISBN 13: 9789812568649
Sprache: Englisch
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Verlag: WORLD SCIENTIFIC PUB CO INC, 2008
ISBN 10: 9812568646 ISBN 13: 9789812568649
Sprache: Englisch
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Gebunden. Zustand: New. Provides a description of the compact MOS transistor models for circuit simulation. This book considers how the models are to include the complete drift-diffusion theory using the surface potential variable in the MOS transistor channel in order to give one.