Silicon Carbide 2004: Materials, Processing and Devices: Volume 815 (MRS Proceedings)

Dudley, Michael [Editor]; Gouma, Perena [Editor]; Kimoto, Tsunenobu [Editor]; Neudeck, Philip G. [Editor]; Saddow, Stephen E. [Editor]

ISBN 10: 1558997652 / ISBN 13: 9781558997653

Verlag: Cambridge University Press, 2004

Beschreibung

A firm and square hardback with sharp corners and strong joints, just showing a few very minor cosmetic rubs. Hence a non-text page has a small 'damaged' stamp. Despite such this book is actually in nearly new condition and looks and feels unread. Thus the contents are crisp, fresh and tight. Also, no pen-marks and not from a library so no such stamps or labels. Now offered for sale at a special price for a speedy sale.

Bestandsnummer des Verkäufers 115463

Bibliografische Details

• Titel: Silicon Carbide 2004: Materials, Processing and Devices: Volume 815 (MRS Proceedings)
• Verlag: Cambridge University Press
• Erscheinungsjahr: 2004
• Sprache: Englisch
• ISBN-10: 1558997652
• ISBN-13: 9781558997653
• Einband: Hardcover
• Auflage: First Edition.
• Zustand: Like New

Über diesen Titel

Inhaltsangabe

The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Reseña del editor

Silicon carbide (SiC) is a wide-bandgap semiconductor that can operate at temperatures well above 300ºC, where silicon cannot perform. In addition, due to a high thermal conductivity equal to copper at room temperature, SiC is an ideal candidate for operation in harsh environments and at high-power levels. Rapid advances in SiC materials and devices have recently resulted in implementation of SiC-based electronic systems, and the impact of these devices is expected to significantly increase in the next several years. This book documents the most recent results on growth of bulk and epitaxial layers, physical and structural properties, process technology, and device development obtained since the 10th International Conference on Silicon Carbide and Related Materials 2003 (ICSCRM2003) held in Lyon, France. Extended defects in silicon carbide are highlighted. The nature of defects induced by forward biasing of bipolar devices, as well as methods to suppress the degradation, are addressed.