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The Thermoballistic Transport Model: A Novel Approach to Charge Carrier Transport in Semiconductors: 259 (Springer Tracts in Modern Physics) - Hardcover

 
9783319059235: The Thermoballistic Transport Model: A Novel Approach to Charge Carrier Transport in Semiconductors: 259 (Springer Tracts in Modern Physics)
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THE BOOK PRESENTS A COMPREHENSIVE SURVEY OF THE THERMOBALLISTIC APPROACH TO CHARGE CARRIER TRANSPORT IN SEMICONDUCTORS. THIS SEMI-CLASSICAL APPROACH, WHICH THE AUTHORS HAVE DEVELOPED OVER THE PAST DECADE, BRIDGES THE GAP BETWEEN THE OPPOSING DRIFT-DIFFUSION AND BALLISTIC MODELS OF CARRIER TRANSPORT. WHILE INCORPORATING BASIC FEATURES OF THE LATTER TWO MODELS, THE PHYSICAL CONCEPT UNDERLYING THE THERMOBALLISTIC APPROACH CONSTITUTES A NOVEL, UNIFYING SCHEME. IT IS BASED ON THE INTRODUCTION OF "BALLISTIC CONFIGURATIONS" ARISING FROM A RANDOM PARTITIONING OF THE LENGTH OF A SEMICONDUCTING SAMPLE INTO BALLISTIC TRANSPORT INTERVALS. STOCHASTIC AVERAGING OF THE BALLISTIC CARRIER CURRENTS OVER THE BALLISTIC CONFIGURATIONS RESULTS IN A POSITION-DEPENDENT THERMOBALLISTIC CURRENT, WHICH IS THE KEY ELEMENT OF THE THERMOBALLISTIC CONCEPT AND FORMS THE POINT OF DEPARTURE FOR THE CALCULATION OF ALL RELEVANT TRANSPORT PROPERTIES. IN THE BOOK, THE THERMOBALLISTIC CONCEPT AND ITS IMPLEMENTATION ARE DEVELOPED IN GREAT DETAIL AND SPECIFIC EXAMPLES OF INTEREST TO CURRENT RESEARCH IN SEMICONDUCTOR PHYSICS AND SPINTRONICS ARE WORKED OUT.

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The book presents a comprehensive survey of the thermoballistic approach to charge carrier transport in semiconductors. This semi-classical approach, which the authors have developed over the past decade, bridges the gap between the opposing drift-diffusion and ballistic models of carrier transport. While incorporating basic features of the latter two models, the physical concept underlying the thermoballistic approach constitutes a novel, unifying scheme. It is based on the introduction of "ballistic configurations" arising from a random partitioning of the length of a semiconducting sample into ballistic transport intervals. Stochastic averaging of the ballistic carrier currents over the ballistic configurations results in a position-dependent thermoballistic current, which is the key element of the thermoballistic concept and forms the point of departure for the calculation of all relevant transport properties. In the book, the thermoballistic concept and its implementation are developed in great detail and specific examples of interest to current research in semiconductor physics and spintronics are worked out.

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  • VerlagSpringer
  • Erscheinungsdatum2014
  • ISBN 10 3319059238
  • ISBN 13 9783319059235
  • EinbandTapa dura
  • Anzahl der Seiten164

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9783319358901: The Thermoballistic Transport Model: A Novel Approach to Charge Carrier Transport in Semiconductors: 259 (Springer Tracts in Modern Physics)

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Buchbeschreibung Buch. Zustand: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -The book presents a comprehensive survey of the thermoballistic approach to charge carrier transport in semiconductors. This semi-classical approach, which the authors have developed over the past decade, bridges the gap between the opposing drift-diffusion and ballistic models of carrier transport. While incorporating basic features of the latter two models, the physical concept underlying the thermoballistic approach constitutes a novel, unifying scheme. It is based on the introduction of 'ballistic configurations' arising from a random partitioning of the length of a semiconducting sample into ballistic transport intervals. Stochastic averaging of the ballistic carrier currents over the ballistic configurations results in a position-dependent thermoballistic current, which is the key element of the thermoballistic concept and forms the point of departure for the calculation of all relevant transport properties. In the book, the thermoballistic concept and its implementation are developed in great detail and specific examples of interest to current research in semiconductor physics and spintronics are worked out. 164 pp. Englisch. Bestandsnummer des Verkäufers 9783319059235

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Buchbeschreibung Gebunden. Zustand: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Presents the thermoballistic approach as a novel and original way of calculationsTreats specific examples of current research in semiconductor physics and spintronicsDevelops the formalism systematically, step-by-step, to make it easily com. Bestandsnummer des Verkäufers 4497413

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Buchbeschreibung Buch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - The book presents a comprehensive survey of the thermoballistic approach to charge carrier transport in semiconductors. This semi-classical approach, which the authors have developed over the past decade, bridges the gap between the opposing drift-diffusion and ballistic models of carrier transport. While incorporating basic features of the latter two models, the physical concept underlying the thermoballistic approach constitutes a novel, unifying scheme. It is based on the introduction of 'ballistic configurations' arising from a random partitioning of the length of a semiconducting sample into ballistic transport intervals. Stochastic averaging of the ballistic carrier currents over the ballistic configurations results in a position-dependent thermoballistic current, which is the key element of the thermoballistic concept and forms the point of departure for the calculation of all relevant transport properties. In the book, the thermoballistic concept and its implementation are developed in great detail and specific examples of interest to current research in semiconductor physics and spintronics are worked out. Bestandsnummer des Verkäufers 9783319059235

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