Emerging Resistive Switching Memories (SpringerBriefs in Materials) - Softcover

Ouyang, Jianyong

Softcover

ISBN 10: 3319315706 ISBN 13: 9783319315706

Verlag: Springer, 2016

Inhaltsangabe

THIS BRIEF DESCRIBES HOW NON-VOLATILE CHANGE OF THE RESISTANCE , DUE TO THE APPLICATION OF ELECTRIC VOLTAGE ALLOWS FOR FABRICATION OF NOVEL DIGITAL MEMORY DEVICES. THE AUTHOR EXPLAINS THE PHYSICS OF THE DEVICES AND PROVIDES A CONCRETE DESCRIPTION OF THE MATERIALS INVOLVED AS WELL AS THE FUNDAMENTAL PROPERTIES OF THE TECHNOLOGY. HE DETAILS HOW CHARGE TRAPPING, CHARGE TRANSFER AND CONDUCTIVE FILAMENT FORMATION EFFECT RESISTIVE SWITCHING MEMORY DEVICES.<BR>

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This brief describes how non-volatile change of the resistance , due to the application of electric voltage allows for fabrication of novel digital memory devices. The author explains the physics of the devices and provides a concrete description of the materials involved as well as the fundamental properties of the technology. He details how charge trapping, charge transfer and conductive filament formation effect resistive switching memory devices.

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Über diese Auflage

• Verlag: Springer
• Erscheinungsdatum: 2016
• ISBN 10: 3319315706
• ISBN 13: 9783319315706
• Einband: Tapa blanda
• Auflage: 1
• Anzahl der Seiten: 104