ULSI Devices - Hardcover

 
9780471240679: ULSI Devices
Hardcover
ISBN 10: 0471240672 ISBN 13: 9780471240679
Verlag: Wiley-Interscience, 2000

Inhaltsangabe

A complete guide to current knowledge and future trends in ULSI devices Ultra-Large-Scale Integration (ULSI), the next generation of semiconductor devices, has become a hot topic of investigation. ULSI Devices provides electrical and electronic engineers, applied physicists, and anyone involved in IC design and process development with a much-needed overview of key technology trends in this area. Edited by two of the foremost authorities on semiconductor device physics, with contributions by some of the best-known researchers in the field, this comprehensive reference examines such major ULSI devices as MOSFET, nonvolatile semiconductor memory (NVSM), and the bipolar transistor, and the improvements these devices offer in power consumption, low-voltage and high-speed operation, and system-on-chip for ULSI applications. Supplemented with introductory material and references for each chapter as well as more than 400 illustrations, coverage includes:
* The physics and operational characteristics of the different components
* The evolution of device structures the ultimate limitations on device and circuit performance
* Device miniaturization and simulation
* Issues of reliability and the hot carrier effect
* Digital and analog circuit building blocks

Die Inhaltsangabe kann sich auf eine andere Ausgabe dieses Titels beziehen.

Über die Autorin bzw. den Autor

C. Y. CHANG, PhD, is a National Chair Professor at the National Chiao Tung University in Hsinchu, Taiwan.

S. M. SZE, PhD, is UMC Chair Professor at the National Chiao Tung University.

Von der hinteren Coverseite

A complete guide to current knowledge and future trends in ULSI devices Ultra-Large-Scale Integration (ULSI), the next generation of semiconductor devices, has become a hot topic of investigation. ULSI Devices provides electrical and electronic engineers, applied physicists, and anyone involved in IC design and process development with a much-needed overview of key technology trends in this area. Edited by two of the foremost authorities on semiconductor device physics, with contributions by some of the best-known researchers in the field, this comprehensive reference examines such major ULSI devices as MOSFET, nonvolatile semiconductor memory (NVSM), and the bipolar transistor, and the improvements these devices offer in power consumption, low-voltage and high-speed operation, and system-on-chip for ULSI applications. Supplemented with introductory material and references for each chapter as well as more than 400 illustrations, coverage includes:
* The physics and operational characteristics of the different components
* The evolution of device structures the ultimate limitations on device and circuit performance
* Device miniaturization and simulation
* Issues of reliability and the hot carrier effect
* Digital and analog circuit building blocks

„Über diesen Titel“ kann sich auf eine andere Ausgabe dieses Titels beziehen.

Verlag
Wiley-Interscience
Erscheinungsdatum
2000
Sprache
Englisch
ISBN 10 
0471240672
ISBN 13 
9780471240679
Einband
Tapa dura
Anzahl der Seiten
744
Herausgeber
Chang C. Y., Sze Simon M.
Kontakt zum Hersteller
Nicht verfügbar
Verantwortliche Person
Nicht verfügbar