Ulsi devices (37 Ergebnisse)

Zustand: Used: Good. 2000 hardcover no dust jacket as issued with only a few pages with light highlighting 729 pages L-17.

Softcover. First Edition; First Printing. Softcover. Ex-Corporate Library copy; with typical markings. Library label on front cover and on spine tail. Light bumping on cover corners. Very light rubbed soil on covers. Light smudges on page edges. Else pages clean, but for library markings. ; B&W Photographs; TET22A; 11 x 8.5"; Ex-Library.…

Hardcover. Zustand: Brand New. 1st edition. 110 pages. 9.09x6.00x0.25 inches. In Stock.

Taschenbuch. Zustand: Neu. New Approaches to Image Processing Based Failure Analysis of Nano-Scale ULSI Devices | Zeev Zalevsky (u. a.) | Taschenbuch | Englisch | 2013 | Elsevier Science | EAN 9780323241434 | Verantwortliche Person für die EU: Elsevier B.V., Radarweg 29, 1043 NX AMSTERDAM, NIEDERLANDE, productsafety[at]elsevier[dot]com | Anbieter: preigu. …

Zustand: Gut. Zustand: Gut | Seiten: 744 | Sprache: Englisch | Produktart: Bücher | A complete guide to current knowledge and future trends in ULSI devices Ultra-Large-Scale Integration (ULSI), the next generation of semiconductor devices, has become a hot topic of investigation. ULSI Devices provides electrical and electronic engineers, applied physicists, and anyone involved in IC design and process development with a much-needed overview of key technology trends in this area. Edited by two of the foremost authorities on semiconductor device physics, with contributions by some of the best-known researchers in the field, this comprehensive reference examines such major ULSI devices as MOSFET, nonvolatile semiconductor memory (NVSM), and the bipolar transistor, and the improvements these devices offer in power consumption, low-voltage and high-speed operation, and system-on-chip for ULSI applications. Supplemented with introductory material and references for each chapter as well as more than 400 illustrations, coverage includes: * The physics and operational characteristics of the different components * The evolution of device structures the ultimate limitations on device and circuit performance * Device miniaturization and simulation * Issues of reliability and the hot carrier effect * Digital and analog circuit building blocks.…

Zustand: New.

Zustand: New.

Zustand: Good. Your purchase helps support Sri Lankan Children's Charity 'The Rainbow Centre'. Ex-library, so some stamps and wear, but in good overall condition. Our donations to The Rainbow Centre have helped provide an education and a safe haven to hundreds of children who live in appalling conditions.…

Zustand: As New. Unread book in perfect condition.

Hardcover. Zustand: Like New. LIKE NEW. SHIPS FROM MULTIPLE LOCATIONS. book.

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hardcover. Zustand: New. In shrink wrap. Looks like an interesting title.

Zustand: New.

Zustand: As New. Unread book in perfect condition.

Zustand: New. Eishi, H. Ibe, Chief Researcher, Yokohama Research Laboratory, Hitachi, Ltd.Dr.Eishi Hidefumi IBE received his Ph.D degree in Nuclear Engineering from Osaka University, Japan in 1985. His expertise covers a wide area of science, such as elementary particle/.

HRD. Zustand: New. New Book. Shipped from UK. Established seller since 2000.

Hardcover. Zustand: Brand New. 268 pages. 9.50x6.75x1.00 inches. In Stock.

Zustand: new.

Hardcover. Zustand: new. Hardcover. This book provides the reader with knowledge on a wide variety of radiation fields and their effects on the electronic devices and systems. The author covers faults and failures in ULSI devices induced by a wide variety of radiation fields, including electrons, alpha-rays, muons, gamma rays, neutrons and heavy ions. Readers will learn how to make numerical models from physical insights, to determine the kind of mathematical approaches that should be implemented to analyze radiation effects. A wide variety of prediction, detection, characterization and mitigation techniques against soft-errors are reviewed and discussed. The author shows how to model sophisticated radiation effects in condensed matter in order to quantify and control them, and explains how electronic systems including servers and routers are shut down due to environmental radiation. Provides an understanding of how electronic systems are shut down due to environmental radiation by constructing physical models and numerical algorithmsCovers both terrestrial and avionic-level conditionsLogically presented with each chapter explaining the background physics to the topic followed by various modelling techniques, and chapter summaryWritten by a widely-recognized authority in soft-errors in electronic devicesCode samples available for download from the Companion Website This book is targeted at researchers and graduate students in nuclear and space radiation, semiconductor physics and electron devices, as well as other areas of applied physics modelling. Researchers and students interested in how a variety of physical phenomena can be modelled and numerically treated will also find this book to present helpful methods. This book provides the reader with knowledge on a wide variety of radiation fields and their effects on the electronic devices and systems. The author covers faults and failures in ULSI devices induced by a wide variety of radiation fields, including electrons, alpha-rays, muons, gamma rays, neutrons and heavy ions. Shipping may be from our UK warehouse or from our Australian or US warehouses, depending on stock availability. …

Zustand: New.

Zustand: As New. Unread book in perfect condition.

Zustand: As New. Unread book in perfect condition.

Zustand: New.

Zustand: New. pp. xii + 729 Illus.

Zustand: New. Ultra-large scale integrated (ULSI) circuits are the next generation of semiconductor devices to follow the very large scale integrated (VLSI) circuits. This volume brings together researchers in the field to write a chapter on their own area of expertise. Editor(s): Chang, C.Y.; Sze, Simon M. Num Pages: 744 pages, Illustrations. BIC Classification: TJFC; UY. Category: (P) Professional & Vocational; (UP) Postgraduate, Research & Scholarly; (UU) Undergraduate. Dimension: 233 x 162 x 39. Weight in Grams: 1220. . 2000. 1st Edition. Hardcover. . . . . …

Zustand: New. In English.

Gebunden. Zustand: New. the production standard and component chapters is characteristically high (Contemporary Physics, Vol.42, No. 4 2001)C. Y. CHANG, PhD, is a National Chair Professor at the National Chiao Tung University in Hsinchu, Taiwan.S. M. SZE, PhD, is UMC Chair P.

Zustand: New. pp. xii + 729.

Hardcover. Zustand: Brand New. 1st edition. 729 pages. 9.50x6.50x1.25 inches. In Stock.

Zustand: New. Ultra-large scale integrated (ULSI) circuits are the next generation of semiconductor devices to follow the very large scale integrated (VLSI) circuits. This volume brings together researchers in the field to write a chapter on their own area of expertise. Editor(s): Chang, C.Y.; Sze, Simon M. Num Pages: 744 pages, Illustrations. BIC Classification: TJFC; UY. Category: (P) Professional & Vocational; (UP) Postgraduate, Research & Scholarly; (UU) Undergraduate. Dimension: 233 x 162 x 39. Weight in Grams: 1220. . 2000. 1st Edition. Hardcover. . . . . Books ship from the US and Ireland. …