The diminishing size and greater complexity of modern semiconductor integrated circuits poses new challenges in fault detection. Photon Emission Microscopy (PEM) is a physical fault localisation technique used for analysing IC failures. Detailing the PEM technique and its application to semiconductor device analysis, this unique reference:
* Illustrates the application of the PEM technique in various areas of device reliability, in particular hot-carrier, oxide and ESD reliability.
* Presents the principles of design and calibration for a spectroscopic emission microscope system along with coverage of the three main operation modes: frontside, backside and spectroscopic PEM
* Provides an analysis of light emission in semiconductors under hot-carrier and high-field impulse stressing in MOS transistors and photon emission from biased MOS capacitors.
Not only an essential reference for researchers and students in the field, the numerous practical examples throughout the text also make this an indispensible guide for failure analysis engineers and microelectrics industry professionals.
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Wai Kin Chim is the author of Semiconductor Device and Failure Analysis : Using Photon Emission Microscopy , published by Wiley.
The diminishing size and greater complexity of modern semiconductor integrated circuits poses new challenges in fault detection. Photon Emission Microscopy (PEM) is a physical fault localisation technique used for analysing IC failures. Detailing the PEM technique and its application to semiconductor device analysis, this unique reference:
* Illustrates the application of the PEM technique in various areas of device reliability, in particular hot-carrier, oxide and ESD reliability.
* Presents the principles of design and calibration for a spectroscopic emission microscope system along with coverage of the three main operation modes: frontside, backside and spectroscopic PEM
* Provides an analysis of light emission in semiconductors under hot-carrier and high-field impulse stressing in MOS transistors and photon emission from biased MOS capacitors.
Not only an essential reference for researchers and students in the field, the numerous practical examples throughout the text also make this an indispensible guide for failure analysis engineers and microelectrics industry professionals.
The diminishing size and greater complexity of modern semiconductor integrated circuits poses new challenges in fault detection. Photon Emission Microscopy (PEM) is a physical fault localisation technique used for analysing IC failures. Detailing the PEM technique and its application to semiconductor device analysis, this unique reference:
* Illustrates the application of the PEM technique in various areas of device reliability, in particular hot-carrier, oxide and ESD reliability.
* Presents the principles of design and calibration for a spectroscopic emission microscope system along with coverage of the three main operation modes: frontside, backside and spectroscopic PEM
* Provides an analysis of light emission in semiconductors under hot-carrier and high-field impulse stressing in MOS transistors and photon emission from biased MOS capacitors.
Not only an essential reference for researchers and students in the field, the numerous practical examples throughout the text also make this an indispensible guide for failure analysis engineers and microelectrics industry professionals.
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Zustand: Very Good. : Este libro detalla la técnica PEM y su aplicación al análisis de dispositivos semiconductores. Ilustra la aplicación de la técnica PEM en varias áreas de la confiabilidad de los dispositivos, en particular la confiabilidad de portadores calientes, óxidos y ESD. Presenta los principios de diseño y calibración para un sistema de microscopio de emisión espectroscópica junto con la cobertura de los tres modos de operación principales: frontal, posterior y PEM espectroscópica. Proporciona un análisis de la emisión de luz en semiconductores bajo portadores calientes y estrés de impulso de alto campo en transistores MOS y emisión de fotones de capacitores MOS polarizados. EAN: 9780471492405 Tipo: Libros Categoría: Tecnología|Ciencias Título: Semiconductor Device and Failure Analysis Autor: Wai Kin Chim Editorial: Wiley Idioma: en Páginas: 288 Formato: tapa dura. Bestandsnummer des Verkäufers Happ-2026-07-02-dfcefa7a
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Zustand: Sehr gut. Zustand: Sehr gut | Seiten: 288 | Sprache: Englisch | Produktart: Bücher | The diminishing size and greater complexity of modern semiconductor integrated circuits poses new challenges in fault detection. Photon Emission Microscopy (PEM) is a physical fault localisation technique used for analysing IC failures. Detailing the PEM technique and its application to semiconductor device analysis, this unique reference: * Illustrates the application of the PEM technique in various areas of device reliability, in particular hot-carrier, oxide and ESD reliability. * Presents the principles of design and calibration for a spectroscopic emission microscope system along with coverage of the three main operation modes: frontside, backside and spectroscopic PEM * Provides an analysis of light emission in semiconductors under hot-carrier and high-field impulse stressing in MOS transistors and photon emission from biased MOS capacitors. Not only an essential reference for researchers and students in the field, the numerous practical examples throughout the text also make this an indispensible guide for failure analysis engineers and microelectrics industry professionals. Bestandsnummer des Verkäufers 191747/202
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