Defects in SiO2 and Related Dielectrics: Science and Technology (NATO Science Series II: Mathematics, Physics and Chemistry, 2, Band 2) - Softcover

Softcover

ISBN 10: 0792366867 ISBN 13: 9780792366867

Verlag: Springer, 2009

Inhaltsangabe

Silicon dioxide plays a central role in most contemporary electronic and photonic technologies, from fiber optics for communications and medical applications to metal-oxide-semiconductor devices. Many of these applications directly involve point defects, which can either be introduced during the manufacturing process or by exposure to ionizing radiation. They can also be deliberately created to exploit new technologies.
This book provides a general description of the influence that point defects have on the global properties of the bulk material and their spectroscopic characterization through ESR and optical spectroscopy.

Details zur Ausgabe

• Verlag: Springer
• Erscheinungsdatum: 2009
• Sprache: Englisch
• ISBN 10: 0792366867
• ISBN 13: 9780792366867
• Einband: Taschenbuch
• Anzahl der Seiten: 636
• Herausgeber: Pacchioni Gianfranco
• Kontakt zum Hersteller: GPSR Kontakt; ProductSafety@springernature.com; ; Tiergartenstr. 17; Heidelberg; 69121; Deutschland