Device simulation has two main purposes: to understand and depict the physical processes in the interior of a device, and to make reliable predictions of the behavior of an anticipated new device generation. Towards these goals the quality of the physical models is decisive. The introductory chapter of this book contains a critical review on models for silicon device simulators, which rely on moments of the Boltzmann equation. With reference to fundamental experimental and theoretical work an extensive collection of widely used models is discussed in terms of physical accuracy and application results. This review shows that the quality and efficiency of the phys ical models, which have been developed for the purpose of numerical simulation over the last three decades, is sufficient for many applications. Nevertheless, the basic understanding of the microscopic processes, as well as the uniqueness and accuracy of the models are still unsatisfactory. Hence, the following chapters of the book deal with the derivation of physics-based models from a microscopic level, also using new approaches of "taylored quantum-mechanics". Each model is compared with experimental data and applied to a number of simulation exam ples. The problems when starting from "first principles" and making the models suitable for a device simulator will also be demonstrated. We will show that demands for rapid computation and numerical robustness require a compromise between physical soundness and analytical simplicity, and that the attainable accuracy is limited by the complexity of the problems.
Die Inhaltsangabe kann sich auf eine andere Ausgabe dieses Titels beziehen.
Anbieter: Brook Bookstore On Demand, Napoli, NA, Italien
Zustand: new. Questo è un articolo print on demand. Bestandsnummer des Verkäufers LFQADB3ULR
Anzahl: Mehr als 20 verfügbar
Anbieter: Ria Christie Collections, Uxbridge, Vereinigtes Königreich
Zustand: New. In. Bestandsnummer des Verkäufers ria9783709173343_new
Anzahl: Mehr als 20 verfügbar
Anbieter: GreatBookPricesUK, Woodford Green, Vereinigtes Königreich
Zustand: New. Bestandsnummer des Verkäufers 19491674-n
Anzahl: Mehr als 20 verfügbar
Anbieter: GreatBookPrices, Columbia, MD, USA
Zustand: New. Bestandsnummer des Verkäufers 19491674-n
Anzahl: Mehr als 20 verfügbar
Anbieter: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Deutschland
Taschenbuch. Zustand: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -From the reviews: '. this is a well produced book, written in a easy to read style, and will also be a very useful primer for someone starting out the field [.], and a useful source of reference for experienced users .' Microelectronics Journal 376 pp. Englisch. Bestandsnummer des Verkäufers 9783709173343
Anzahl: 2 verfügbar
Anbieter: moluna, Greven, Deutschland
Zustand: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Excellent overview about the most widely used modelsDiscussion of accuracy and application resultsComparison of theory and experimental dataFrom the reviews: . this is a well produced book, written in a easy to read style, and will also be. Bestandsnummer des Verkäufers 5250408
Anzahl: Mehr als 20 verfügbar
Anbieter: preigu, Osnabrück, Deutschland
Taschenbuch. Zustand: Neu. Advanced Physical Models for Silicon Device Simulation | Andreas Schenk | Taschenbuch | xviii | Englisch | 2012 | Springer | EAN 9783709173343 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu. Bestandsnummer des Verkäufers 106020265
Anzahl: 5 verfügbar
Anbieter: Books Puddle, New York, NY, USA
Zustand: New. pp. 376. Bestandsnummer des Verkäufers 2648028720
Anzahl: 4 verfügbar
Anbieter: buchversandmimpf2000, Emtmannsberg, BAYE, Deutschland
Taschenbuch. Zustand: Neu. This item is printed on demand - Print on Demand Titel. Neuware -Device simulation has two main purposes: to understand and depict the physical processes in the interior of a device, and to make reliable predictions of the behavior of an anticipated new device generation. Towards these goals the quality of the physical models is decisive. The introductory chapter of this book contains a critical review on models for silicon device simulators, which rely on moments of the Boltzmann equation. With reference to fundamental experimental and theoretical work an extensive collection of widely used models is discussed in terms of physical accuracy and application results. This review shows that the quality and efficiency of the phys ical models, which have been developed for the purpose of numerical simulation over the last three decades, is sufficient for many applications. Nevertheless, the basic understanding of the microscopic processes, as well as the uniqueness and accuracy of the models are still unsatisfactory. Hence, the following chapters of the book deal with the derivation of physics-based models from a microscopic level, also using new approaches of 'taylored quantum-mechanics'. Each model is compared with experimental data and applied to a number of simulation exam ples. The problems when starting from 'first principles' and making the models suitable for a device simulator will also be demonstrated. We will show that demands for rapid computation and numerical robustness require a compromise between physical soundness and analytical simplicity, and that the attainable accuracy is limited by the complexity of the problems.Springer-Verlag KG, Sachsenplatz 4-6, 1201 Wien 376 pp. Englisch. Bestandsnummer des Verkäufers 9783709173343
Anzahl: 1 verfügbar
Anbieter: AHA-BUCH GmbH, Einbeck, Deutschland
Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - Device simulation has two main purposes: to understand and depict the physical processes in the interior of a device, and to make reliable predictions of the behavior of an anticipated new device generation. Towards these goals the quality of the physical models is decisive. The introductory chapter of this book contains a critical review on models for silicon device simulators, which rely on moments of the Boltzmann equation. With reference to fundamental experimental and theoretical work an extensive collection of widely used models is discussed in terms of physical accuracy and application results. This review shows that the quality and efficiency of the phys ical models, which have been developed for the purpose of numerical simulation over the last three decades, is sufficient for many applications. Nevertheless, the basic understanding of the microscopic processes, as well as the uniqueness and accuracy of the models are still unsatisfactory. Hence, the following chapters of the book deal with the derivation of physics-based models from a microscopic level, also using new approaches of 'taylored quantum-mechanics'. Each model is compared with experimental data and applied to a number of simulation exam ples. The problems when starting from 'first principles' and making the models suitable for a device simulator will also be demonstrated. We will show that demands for rapid computation and numerical robustness require a compromise between physical soundness and analytical simplicity, and that the attainable accuracy is limited by the complexity of the problems. Bestandsnummer des Verkäufers 9783709173343
Anzahl: 1 verfügbar