Physics of Semiconductor Devices. Dieser Artikel ist nicht verfügbar.Physics of Semiconductor Devices

M. Rudan (b. 1949) graduated in Electrical Engineering (1973) and in Physics (1976), both at the University of Bologna, Italy. Lecturer (1978), Associate Professor (1985), and Full Professor of Electronics (1990) at the Faculty of Engineering of the same University. Early investigations (1975-1980) in the field of the analytical modeling of semiconductor devices. Since 1980 M. R. has been working in a group involved in investigations on physics of carrier transport and numerical analysis of semiconductor devices. Visiting scientist, on a one-year assignment (1986), at the IBM T. J. Watson Research Center, studying solution methods for the Boltzmann Transport Equation. Reviewer and Guest Editor of the IEEE Transactions on Computer-Aided Design and IEEE Transactions on Electron Devices; Editor of COMPEL and of the International Journal of Numerical Modeling; Reviewer of the IEEE Electron Device Letters, Solid-State Electronics, Electronics Letters, Physical Review B, Journal of Applied Physics; Program Chairman, Chairman, or Committee Member, of the IEDM, SISDEP (SISPAD), ESSDERC, and IWCE International Conferences. With H. Baltes and W. Göpel, M. R. is a recipient of the 1998 Körber Foundation Award for the Project “Elektronische ‘Mikronase’ für flüchtige organische Verbindungen” (“Electronic ‘Micronose’ for Volatile Organic Compounds”). In 2001 M. R. was one of the founders of the Advanced Research Center for Electronic Systems (ARCES) of the University of Bologna. Distinguished Lecturer of the Electron Device Society of the IEEE (2004) and IEEE Fellow (2008).