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Physical Chemistry of, in and on Silicon (Springer Series in Materials Science)
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Physical Chemistry of, in and on Silicon
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Nanoscale Devices
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Zustand: New. This is a Brand-new US Edition. This Item may be shipped from US or any other country as we have multiple locations worldwide.
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Zustand: Brand New. New. US edition. Expediting shipping for all USA and Europe orders excluding PO Box. Excellent Customer Service.
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Zustand: New. pp. 138 Index.
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Physical Chemistry Of, in and on Silicon (Springer Series in Materials Science)
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Nanoscale Devices
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Nanoscale Devices
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Physical Chemistry of, in and on Silicon (Springer Series in Materials Science)
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Physical Chemistry of, in and on Silicon
Sprache: Englisch
Verlag: Springer Berlin Heidelberg, 2011
ISBN 10: 3642735061 ISBN 13: 9783642735066
Anbieter: AHA-BUCH GmbH, Einbeck, Deutschland
Verkäuferbewertung 5 von 5 Sternen
Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - The aim of this book is twofold: it is intended for use as a textbook for a ~ourse on electronic materials (indeed, it stems from a series of lectures on this topic delivered at Milan Polytechnic and at the universities of Modena and Parma), and as an up-to-date review for scientists working in the field ::f silicon processing. Although a number of works on silicon are already available, the vast amount of existing and new data on silicon properties are nowhere adequately summarized in a single comprehensive report. The present volume is intended to fill this gap. Most of the examples dealt with are taken from the authors' every day experience, this choice being dictated merely by their greater knowl edge of these areas. Certain aspects of the physics of silicon have not been included; this is either because they have been treated in standard textbooks (e.g. the inhomogeneously doped semiconductor and the chem istry of isotropic or preferential aqueous etching of silicon), or because they are still in a rapidly evolving phase (e.g. silicon band-gap engineering, generation-recombination phenomena, cryogenic properties and the chem istry of plasma etching). In line with the standard practice in microelectronics, CGS units will be used for mechanical and thermal quantities, and SI units for electrical quan tities. All atomic energies will be given in electronvolts and the angstrom will be the unit of length used for atomic phenomena.
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Nanoscale Devices: Fabrication, Functionalization, and Accessibility from the Macroscopic World (NanoScience and Technology)
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Physical Chemistry of, in and on Silicon (Springer Series in Materials Science (8))
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Zustand: New. pp. 224.
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Zustand: Sehr gut. Zustand: Sehr gut | Sprache: Englisch | Produktart: Bücher | The second half of the twentieth century and the beginning of the twenty ?rst have been characterized by the most impressive industrial revolution ever seen. In - proximately 40years, the complexity of integrated circuits (ICs) has increased by a 9 factor of 10 , with a corresponding reduction of the cost per bit by eight orders of magnitude. Not only has this evolution allowed dramatic progress in allscienti?c ?elds (large computers, space probes, etc.), but also has fueled the economic development with the raise of new markets (personal computers, cellular phones, etc.) and even social revolutions (world wide web, global village, etc.). In last years, however, the situation has signi?cantly changed: the continuous scaling down of device size has eventually brought the IC major technique, p- tolithography, to its limits. Overcoming its original limits has been proved to be possible, but the price to pay for that has changed the playing rules ¿ while at the beginning of the IC history the evolution was driven by technology, now it is driven by economy, the cost of a medium size production plant being in the range of a few billion dollars.
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Nanoscale Devices: Fabrication, Functionalization, and Accessibility from the Macroscopic World
Anbieter: Revaluation Books, Exeter, Vereinigtes Königreich
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In den WarenkorbPaperback. Zustand: Brand New. 2009 edition. 221 pages. 9.25x6.10x0.53 inches. In Stock.
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Nanoscale Devices: Fabrication, Functionalization, and Accessibility from the Macroscopic World (NanoScience and Technology)
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Nanoscale Devices: Fabrication, Functionalization, and Accessibility from the Macroscopic World
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Nanoscale Devices : Fabrication, Functionalization, and Accessibility from the Macroscopic World
Sprache: Englisch
Verlag: Springer Berlin Heidelberg, 2012
ISBN 10: 3642260233 ISBN 13: 9783642260230
Anbieter: AHA-BUCH GmbH, Einbeck, Deutschland
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Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - The second half of the twentieth century and the beginning of the twenty rst have been characterized by the most impressive industrial revolution ever seen. In - proximately 40years, the complexity of integrated circuits (ICs) has increased by a 9 factor of 10 , with a corresponding reduction of the cost per bit by eight orders of magnitude. Not only has this evolution allowed dramatic progress in allscienti c elds (large computers, space probes, etc.), but also has fueled the economic development with the raise of new markets (personal computers, cellular phones, etc.) and even social revolutions (world wide web, global village, etc.). In last years, however, the situation has signi cantly changed: the continuous scaling down of device size has eventually brought the IC major technique, p- tolithography, to its limits. Overcoming its original limits has been proved to be possible, but the price to pay for that has changed the playing rules - while at the beginning of the IC history the evolution was driven by technology, now it is driven by economy, the cost of a medium size production plant being in the range of a few billion dollars.
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Nanoscale Devices : Fabrication, Functionalization, and Accessibility from the Macroscopic World
Sprache: Englisch
Verlag: Springer Berlin Heidelberg, Springer Berlin Heidelberg, 2009
ISBN 10: 354092731X ISBN 13: 9783540927310
Anbieter: AHA-BUCH GmbH, Einbeck, Deutschland
Verkäuferbewertung 5 von 5 Sternen
Buch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - The second half of the twentieth century and the beginning of the twenty rst have been characterized by the most impressive industrial revolution ever seen. In - proximately 40years, the complexity of integrated circuits (ICs) has increased by a 9 factor of 10 , with a corresponding reduction of the cost per bit by eight orders of magnitude. Not only has this evolution allowed dramatic progress in allscienti c elds (large computers, space probes, etc.), but also has fueled the economic development with the raise of new markets (personal computers, cellular phones, etc.) and even social revolutions (world wide web, global village, etc.). In last years, however, the situation has signi cantly changed: the continuous scaling down of device size has eventually brought the IC major technique, p- tolithography, to its limits. Overcoming its original limits has been proved to be possible, but the price to pay for that has changed the playing rules - while at the beginning of the IC history the evolution was driven by technology, now it is driven by economy, the cost of a medium size production plant being in the range of a few billion dollars.
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Nanoscale Devices: Fabrication, Functionalization, and Accessibility from the Macroscopic World (NanoScience and Technology)
Anbieter: Ria Christie Collections, Uxbridge, Vereinigtes Königreich
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Nanoscale Devices: Fabrication, Functionalization, and Accessibility from the Macroscopic World (NanoScience and Technology)
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Physical Chemistry of, in and on Silicon (eng)
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Physical Chemistry of, in and on Silicon
Sprache: Englisch
Verlag: Springer, Springer Dez 2011, 2011
ISBN 10: 3642735061 ISBN 13: 9783642735066
Anbieter: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Deutschland
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Taschenbuch. Zustand: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -The aim of this book is twofold: it is intended for use as a textbook for a ~ourse on electronic materials (indeed, it stems from a series of lectures on this topic delivered at Milan Polytechnic and at the universities of Modena and Parma), and as an up-to-date review for scientists working in the field ::f silicon processing. Although a number of works on silicon are already available, the vast amount of existing and new data on silicon properties are nowhere adequately summarized in a single comprehensive report. The present volume is intended to fill this gap. Most of the examples dealt with are taken from the authors' every day experience, this choice being dictated merely by their greater knowl edge of these areas. Certain aspects of the physics of silicon have not been included; this is either because they have been treated in standard textbooks (e.g. the inhomogeneously doped semiconductor and the chem istry of isotropic or preferential aqueous etching of silicon), or because they are still in a rapidly evolving phase (e.g. silicon band-gap engineering, generation-recombination phenomena, cryogenic properties and the chem istry of plasma etching). In line with the standard practice in microelectronics, CGS units will be used for mechanical and thermal quantities, and SI units for electrical quan tities. All atomic energies will be given in electronvolts and the angstrom will be the unit of length used for atomic phenomena. 136 pp. Englisch.
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Physical Chemistry of, in and on Silicon
Anbieter: Majestic Books, Hounslow, Vereinigtes Königreich
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In den WarenkorbZustand: New. Print on Demand pp. 138 26 Figures, 49:B&W 6.14 x 9.21 in or 234 x 156 mm (Royal 8vo) Perfect Bound on White w/Gloss Lam.
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Physical Chemistry of, in and on Silicon
Anbieter: Biblios, Frankfurt am main, HESSE, Deutschland
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Zustand: New. PRINT ON DEMAND pp. 138, Abbreviations.
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Nanoscale Devices (eng)
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EUR 86,24
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Nanoscale Devices (eng)
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Physical Chemistry of, in and on Silicon
Sprache: Englisch
Verlag: Springer Berlin Heidelberg, 2011
ISBN 10: 3642735061 ISBN 13: 9783642735066
EUR 48,37
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In den WarenkorbZustand: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. The aim of this book is twofold: it is intended for use as a textbook for a ~ourse on electronic materials (indeed, it stems from a series of lectures on this topic delivered at Milan Polytechnic and at the universities of Modena and Parma), and as an up-to.
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Physical Chemistry of, in and on Silicon
Sprache: Englisch
Verlag: Springer, Springer Dez 2011, 2011
ISBN 10: 3642735061 ISBN 13: 9783642735066
Anbieter: buchversandmimpf2000, Emtmannsberg, BAYE, Deutschland
Verkäuferbewertung 5 von 5 Sternen
Taschenbuch. Zustand: Neu. This item is printed on demand - Print on Demand Titel. Neuware -The aim of this book is twofold: it is intended for use as a textbook for a ~ourse on electronic materials (indeed, it stems from a series of lectures on this topic delivered at Milan Polytechnic and at the universities of Modena and Parma), and as an up-to-date review for scientists working in the field ::>f silicon processing. Although a number of works on silicon are already available, the vast amount of existing and new data on silicon properties are nowhere adequately summarized in a single comprehensive report. The present volume is intended to fill this gap. Most of the examples dealt with are taken from the authors' every day experience, this choice being dictated merely by their greater knowl edge of these areas. Certain aspects of the physics of silicon have not been included; this is either because they have been treated in standard textbooks (e.g. the inhomogeneously doped semiconductor and the chem istry of isotropic or preferential aqueous etching of silicon), or because they are still in a rapidly evolving phase (e.g. silicon band-gap engineering, generation-recombination phenomena, cryogenic properties and the chem istry of plasma etching). In line with the standard practice in microelectronics, CGS units will be used for mechanical and thermal quantities, and SI units for electrical quan tities. All atomic energies will be given in electronvolts and the angstrom will be the unit of length used for atomic phenomena.Springer-Verlag KG, Sachsenplatz 4-6, 1201 Wien 136 pp. Englisch.
