Sprache: Englisch
Verlag: Information Age Publishing, 2020
ISBN 10: 164802291X ISBN 13: 9781648022913
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Sprache: Englisch
Verlag: Information Age Publishing, 2020
ISBN 10: 164802291X ISBN 13: 9781648022913
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Sprache: Englisch
Verlag: Publications International, Lincolnwood, IL, 1998
ISBN 10: 0785325891 ISBN 13: 9780785325895
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Hardcover. Zustand: Fine. Zustand des Schutzumschlags: Near Fine. Dan Krovatin; Mark McIntosh (illustrator). Hardcover illustrated laminated boards with decorated endpapers, Includes color and b/w illustrations, 192 pages. The DJ is in Near Fine condition.
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Sprache: Englisch
Verlag: Information Age Publishing, 2020
ISBN 10: 164802291X ISBN 13: 9781648022913
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Sprache: Englisch
Verlag: Saarbrücken : VDM Verlag Dr. Müller, 2008
ISBN 10: 3639019997 ISBN 13: 9783639019995
Anbieter: Versandbuchhandlung Kisch & Co., Fürstenberg OT Blumenow, Deutschland
Taschenbuch. Zustand: Neu. Neu Neuware; original eingeschweisst; Rechnung mit MwSt.; new item, still sealed; Bestellungen bis 15 Uhr werden am gleichen Werktag verschickt_____The injection of spin polarised electrons into semiconductors is a fundamental challenge in the emergent field of spin electronics. This work is an investigation into spin injection from magnetic thin film contacts into (100) GaAs/InGaAs quantum wells in spin light emitting diodes (spin LEDs). This structure is relevant to many quantum dot device layers. The spin injection characteristics are examined as a function of photon energy, magnetic field, applied bias, external optical efficiency and temperature. Further, the Heusler alloys Co2TiSn and Co2CrAl are investigated through ab initio electronic structure calculations as potentially highly polarised spin injectors. Pronounced minority spin band gaps were found in these alloys and while majority spins are metallic, minority spins undergo hole-like dispersion near the Fermi level. While spin injection is observed from both Heusler alloy and Fe injectors, Fe is a more efficient spin injector and gives room temperature results. The bias dependent spin injection shows a decrease at higher voltages due to hot electron spin transport in the semiconductor and shows similar trends for both types of spin injector. -The injection of spin polarised electrons into semiconductors is a fundamental challenge in the emergent field of spin electronics. This work is an investigation into spin injection from magnetic thin film contacts into (100) GaAs/InGaAs quantum wells in spin light emitting diodes (spin LEDs). This structure is relevant to many quantum dot device layers. The spin injection characteristics are examined as a function of photon energy, magnetic field, applied bias, external optical efficiency and temperature. Further, the Heusler alloys Co2TiSn and Co2CrAl are investigated through ab initio electronic structure calculations as potentially highly polarised spin injectors. Pronounced minority spin band gaps were found in these alloys and while majority spins are metallic, minority spins undergo hole-like dispersion near the Fermi level. While spin injection is observed from both Heusler alloy and Fe injectors, Fe is a more efficient spin injector and gives room temperature results. The bias dependent spin injection shows a decrease at higher voltages due to hot electron spin transport in the semiconductor and shows similar trends for both types of spin injector. 208 pp. Englisch.
Sprache: Englisch
Verlag: Information Age Publishing, 2020
ISBN 10: 164802291X ISBN 13: 9781648022913
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Sprache: Englisch
Verlag: Information Age Publishing, 2020
ISBN 10: 164802291X ISBN 13: 9781648022913
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Sprache: Englisch
Verlag: Emerald Publishing Limited, 2020
ISBN 10: 164802291X ISBN 13: 9781648022913
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Sprache: Englisch
Verlag: Information Age Publishing, 2020
ISBN 10: 164802291X ISBN 13: 9781648022913
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Sprache: Englisch
Verlag: Saarbrücken : VDM Verlag Dr. Müller, 2008
ISBN 10: 3639019997 ISBN 13: 9783639019995
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Taschenbuch. Zustand: Neu. Neu Neuware; original eingeschweisst; Rechnung mit MwSt.; new item, still sealed; Bestellungen bis 15 Uhr werden am gleichen Werktag verschickt_____The injection of spin polarised electrons into semiconductors is a fundamental challenge in the emergent field of spin electronics. This work is an investigation into spin injection from magnetic thin film contacts into (100) GaAs/InGaAs quantum wells in spin light emitting diodes (spin LEDs). This structure is relevant to many quantum dot device layers. The spin injection characteristics are examined as a function of photon energy, magnetic field, applied bias, external optical efficiency and temperature. Further, the Heusler alloys Co2TiSn and Co2CrAl are investigated through ab initio electronic structure calculations as potentially highly polarised spin injectors. Pronounced minority spin band gaps were found in these alloys and while majority spins are metallic, minority spins undergo hole-like dispersion near the Fermi level. While spin injection is observed from both Heusler alloy and Fe injectors, Fe is a more efficient spin injector and gives room temperature results. The bias dependent spin injection shows a decrease at higher voltages due to hot electron spin transport in the semiconductor and shows similar trends for both types of spin injector. -The injection of spin polarised electrons into semiconductors is a fundamental challenge in the emergent field of spin electronics. This work is an investigation into spin injection from magnetic thin film contacts into (100) GaAs/InGaAs quantum wells in spin light emitting diodes (spin LEDs). This structure is relevant to many quantum dot device layers. The spin injection characteristics are examined as a function of photon energy, magnetic field, applied bias, external optical efficiency and temperature. Further, the Heusler alloys Co2TiSn and Co2CrAl are investigated through ab initio electronic structure calculations as potentially highly polarised spin injectors. Pronounced minority spin band gaps were found in these alloys and while majority spins are metallic, minority spins undergo hole-like dispersion near the Fermi level. While spin injection is observed from both Heusler alloy and Fe injectors, Fe is a more efficient spin injector and gives room temperature results. The bias dependent spin injection shows a decrease at higher voltages due to hot electron spin transport in the semiconductor and shows similar trends for both types of spin injector. 208 pp. Englisch.
Sprache: Englisch
Verlag: Information Age Publishing, 2020
ISBN 10: 164802291X ISBN 13: 9781648022913
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Sprache: Englisch
Verlag: Information Age Publishing, 2020
ISBN 10: 164802291X ISBN 13: 9781648022913
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Sprache: Englisch
Verlag: Information Age Publishing, 2020
ISBN 10: 164802291X ISBN 13: 9781648022913
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Paperback. Zustand: New. In shrink wrap. Looks like an interesting title!
Verlag: Barcelona: Fundacio Joan Miro, 1996
Anbieter: ANARTIST, New York, NY, USA
Softcover, 228 pages; in Spanish with English at rear; very good condition; clean and crisp; no internal marks. Foreign shipping may be extra.
Sprache: Englisch
Verlag: Information Age Publishing, 2020
ISBN 10: 164802291X ISBN 13: 9781648022913
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Sprache: Englisch
Verlag: Information Age Publishing, 2020
ISBN 10: 164802291X ISBN 13: 9781648022913
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Sprache: Englisch
Verlag: Information Age Publishing, 2020
ISBN 10: 164802291X ISBN 13: 9781648022913
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Sprache: Englisch
Verlag: Information Age Publishing 2020-12-01, 2020
ISBN 10: 164802291X ISBN 13: 9781648022913
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Sprache: Englisch
Verlag: Information Age Publishing, 2020
ISBN 10: 1648022928 ISBN 13: 9781648022920
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Hardcover. Zustand: Very Good. Mild to Moderate creasing / bending to covers and pages. Book is otherwise very clean, unmarked and 100% functional.
Sprache: Englisch
Verlag: Information Age Publishing, 2020
ISBN 10: 164802291X ISBN 13: 9781648022913
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Sprache: Englisch
Verlag: Information Age Publishing, 2020
ISBN 10: 164802291X ISBN 13: 9781648022913
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