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In den WarenkorbZustand: New. In.
Anbieter: Buchpark, Trebbin, Deutschland
Zustand: Sehr gut. Zustand: Sehr gut | Seiten: 308 | Sprache: Englisch | Produktart: Bücher | Defects in semiconductors have been studied for many years, in many cases with a view toward controlling their behaviour through various forms of ¿defect engineering¿. For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. ¿Charged Defects in Semiconductors¿ details the current state of knowledge regarding the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors. Features: group IV, III-V, and oxide semiconductors; intrinsic and extrinsic defects; and, point defects, as well as defect pairs, complexes and clusters.
Zustand: New. pp. 310.
Zustand: New. pp. 310.
Anbieter: preigu, Osnabrück, Deutschland
Taschenbuch. Zustand: Neu. Charged Semiconductor Defects | Structure, Thermodynamics and Diffusion | Meredith C. Kratzer (u. a.) | Taschenbuch | xiv | Englisch | 2010 | Springer London | EAN 9781849968201 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.
Sprache: Englisch
Verlag: Springer London, Springer London, 2010
ISBN 10: 1849968209 ISBN 13: 9781849968201
Anbieter: AHA-BUCH GmbH, Einbeck, Deutschland
Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - Defects in semiconductors have been studied for many years, in many cases with a view toward controlling their behaviour through various forms of 'defect engineering'. For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. 'Charged Defects in Semiconductors' details the current state of knowledge regarding the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors. Features: group IV, III-V, and oxide semiconductors; intrinsic and extrinsic defects; and, point defects, as well as defect pairs, complexes and clusters.
Sprache: Englisch
Verlag: Springer London, Springer, 2008
ISBN 10: 1848820585 ISBN 13: 9781848820586
Anbieter: AHA-BUCH GmbH, Einbeck, Deutschland
Buch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - Defects in semiconductors have been studied for many years, in many cases with a view toward controlling their behaviour through various forms of 'defect engineering'. For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. 'Charged Defects in Semiconductors' details the current state of knowledge regarding the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors. Features: group IV, III-V, and oxide semiconductors; intrinsic and extrinsic defects; and, point defects, as well as defect pairs, complexes and clusters.
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In den WarenkorbHardcover. Zustand: Brand New. 1st edition. 294 pages. 9.50x6.25x1.00 inches. In Stock.
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Anbieter: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Deutschland
Taschenbuch. Zustand: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Defects in semiconductors have been studied for many years, in many cases with a view toward controlling their behaviour through various forms of 'defect engineering'. For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. 'Charged Defects in Semiconductors' details the current state of knowledge regarding the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors. Features: group IV, III-V, and oxide semiconductors; intrinsic and extrinsic defects; and, point defects, as well as defect pairs, complexes and clusters. 308 pp. Englisch.
Anbieter: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Deutschland
Buch. Zustand: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Defects in semiconductors have been studied for many years, in many cases with a view toward controlling their behaviour through various forms of 'defect engineering'. For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. 'Charged Defects in Semiconductors' details the current state of knowledge regarding the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors. Features: group IV, III-V, and oxide semiconductors; intrinsic and extrinsic defects; and, point defects, as well as defect pairs, complexes and clusters. 308 pp. Englisch.
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In den WarenkorbZustand: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Details the current state of knowledge regarding the properties of ionized defects in advanced transistors, photo-active devices, catalysts, and sensorsEdmund Seebauer is currently Head of Chemical and Biomolecular Engineering.
Anbieter: moluna, Greven, Deutschland
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In den WarenkorbZustand: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Details the current state of knowledge regarding the properties of ionized defects in advanced transistors, photo-active devices, catalysts, and sensorsEdmund Seebauer is currently Head of Chemical and Biomolecular Engineering.
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In den WarenkorbZustand: New. Print on Demand pp. 310 90 Illus.
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In den WarenkorbZustand: New. Print on Demand pp. 310 52:B&W 6.14 x 9.21in or 234 x 156mm (Royal 8vo) Case Laminate on White w/Gloss Lam.
Sprache: Englisch
Verlag: Springer London, Springer Dez 2008, 2008
ISBN 10: 1848820585 ISBN 13: 9781848820586
Anbieter: buchversandmimpf2000, Emtmannsberg, BAYE, Deutschland
Buch. Zustand: Neu. This item is printed on demand - Print on Demand Titel. Neuware -Defects in semiconductors have been studied for many years, in many cases with a view toward controlling their behaviour through various forms of ¿defect engineering¿. For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. ¿Charged Defects in Semiconductors¿ details the current state of knowledge regarding the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors. Features: group IV, III-V, and oxide semiconductors; intrinsic and extrinsic defects; and, point defects, as well as defect pairs, complexes and clusters.Springer-Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 308 pp. Englisch.
Sprache: Englisch
Verlag: Springer London, Springer London Okt 2010, 2010
ISBN 10: 1849968209 ISBN 13: 9781849968201
Anbieter: buchversandmimpf2000, Emtmannsberg, BAYE, Deutschland
Taschenbuch. Zustand: Neu. This item is printed on demand - Print on Demand Titel. Neuware -Defects in semiconductors have been studied for many years, in many cases with a view toward controlling their behaviour through various forms of ¿defect engineering¿. For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. ¿Charged Defects in Semiconductors¿ details the current state of knowledge regarding the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors. Features: group IV, III-V, and oxide semiconductors; intrinsic and extrinsic defects; and, point defects, as well as defect pairs, complexes and clusters.Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 308 pp. Englisch.
Anbieter: Biblios, Frankfurt am main, HESSE, Deutschland
Zustand: New. PRINT ON DEMAND pp. 310.
Anbieter: Biblios, Frankfurt am main, HESSE, Deutschland
Zustand: New. PRINT ON DEMAND pp. 310.