N nanda kumar reddy (9 Ergebnisse)

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Taschenbuch. Zustand: Neu. Studies on Pt/Ru and Pd/Ru Schottky Contacts to n-type Gallium Nitride | N. Nanda Kumar Reddy (u. a.) | Taschenbuch | 168 S. | Englisch | 2016 | Scholars' Press | EAN 9783659843440 | Verantwortliche Person für die EU: BoD - Books on Demand, In de Tarpen 42, 22848 Norderstedt, info[at]bod[dot]de | Anbieter: preigu.…

Paperback. Zustand: Brand New. 168 pages. 8.66x5.91x0.38 inches. In Stock.

Taschenbuch. Zustand: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -The recent strong interest in obtaining devices with high temperature functioning, high switching speed and high power performances has focused research attention on new wide band gap materials. Among them, gallium nitride (GaN) has gained attention due to its high band gap value (~3.4 eV at room temperature) that makes it goes intrinsic at much higher temperature than Si, but also due to its high saturation velocity (higher than for SiC) and high critical electric field allowing to reach larger breakdown voltage values. For the last few years, it has already found applications in topics such as optoelectronic devices, blue to green light emitting diodes (LEDs), laser diodes (LDs), detectors and high electron mobility transistors (HEMTs). 168 pp. Englisch.…

Zustand: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Reddy N. Nanda KumarDr.N.Nanda Kumar Reddy presently working as Assistant Professor in Department of Physics, Madanapalle Institute of Technology and Science, Angallu, Madanapalle, Chtittoor(Dist.), A.P, India. He received his Ph.D . …

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Taschenbuch. Zustand: Neu. This item is printed on demand - Print on Demand Titel. Neuware -The recent strong interest in obtaining devices with high temperature functioning, high switching speed and high power performances has focused research attention on new wide band gap materials. Among them, gallium nitride (GaN) has gained attention due to its high band gap value (~3.4 eV at room temperature) that makes it goes intrinsic at much higher temperature than Si, but also due to its high saturation velocity (higher than for SiC) and high critical electric field allowing to reach larger breakdown voltage values. For the last few years, it has already found applications in topics such as optoelectronic devices, blue to green light emitting diodes (LEDs), laser diodes (LDs), detectors and high electron mobility transistors (HEMTs).VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 168 pp. Englisch. …

Taschenbuch. Zustand: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - The recent strong interest in obtaining devices with high temperature functioning, high switching speed and high power performances has focused research attention on new wide band gap materials. Among them, gallium nitride (GaN) has gained attention due to its high band gap value (~3.4 eV at room temperature) that makes it goes intrinsic at much higher temperature than Si, but also due to its high saturation velocity (higher than for SiC) and high critical electric field allowing to reach larger breakdown voltage values. For the last few years, it has already found applications in topics such as optoelectronic devices, blue to green light emitting diodes (LEDs), laser diodes (LDs), detectors and high electron mobility transistors (HEMTs). …