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Low Substrate Temperature Modeling Outlook of Scaled n-MOSFET (Synthesis Lectures on Emerging Engineering Technologies)
Sprache: Englisch
Verlag: Morgan & Claypool Publishers, 2018
ISBN 10: 1681733854 ISBN 13: 9781681733852
Anbieter: suffolkbooks, Center moriches, NY, USA
Verkäuferbewertung 4 von 5 Sternen
paperback. Zustand: Very Good. Fast Shipping - Safe and Secure 7 days a week!
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New Prospects of Integrating Low Substrate Temperatures with Scaling-Sustained Device Architectural Innovation (Synthesis Lectures on Emerging Engineering Technologies)
Sprache: Englisch
Verlag: Morgan & Claypool Publishers, 2016
ISBN 10: 1627058540 ISBN 13: 9781627058544
Anbieter: suffolkbooks, Center moriches, NY, USA
Verkäuferbewertung 4 von 5 Sternen
paperback. Zustand: Very Good. Fast Shipping - Safe and Secure 7 days a week!
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New Prospects of Integrating Low Substrate Temperatures with Scaling-Sustained Device Architectural Innovation (Synthesis Lectures on Emerging Engineering Technologies)
Sprache: Englisch
Verlag: Morgan & Claypool Publishers, 2016
ISBN 10: 1627058540 ISBN 13: 9781627058544
Anbieter: Our Kind Of Books, Liphook, Vereinigtes Königreich
Verkäuferbewertung 5 von 5 Sternen
EUR 11,82
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In den WarenkorbSoft cover. Zustand: As New. This book has been in storage since publication and is unread. Hence the description as new .
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Low Substrate Temperature Modeling Outlook of Scaled N-mosfet
Anbieter: GreatBookPrices, Columbia, MD, USA
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EUR 39,44
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Low Substrate Temperature Modeling Outlook of Scaled n-MOSFET
Sprache: Englisch
Verlag: Morgan & Claypool Publishers, "Synthesis Lectures on Emerging Engineering Technologies" series, [San Raphael, CA], 2018
ISBN 10: 1681733870 ISBN 13: 9781681733876
Anbieter: Philip Gibbons Books, Newcastle Emlyn, Vereinigtes Königreich
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Erstausgabe
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In den WarenkorbHardcover/Hardback. Zustand: As New. No Jacket. First edition. Digital edition: this copy printed in UK. Quarto-size, 92 pages (xii, 80), graphs, mathematical notation; publisher's pale blue laminated covers; Issued without jacket.
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Zustand: New. 1st edition NO-PA16APR2015-KAP.
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New Prospects of Integrating Low Substrate Temperatures with Scaling-Sustained Device Architectural Innovation (Synthesis Lectures on Emerging Engineering Technologies)
Anbieter: Ria Christie Collections, Uxbridge, Vereinigtes Königreich
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EUR 33,10
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New Prospects of Integrating Low Substrate Temperatures with Scaling-Sustained Device Architectural Innovation
Anbieter: Chiron Media, Wallingford, Vereinigtes Königreich
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EUR 31,17
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Low Substrate Temperature Modeling Outlook of Scaled n-MOSFET (Synthesis Lectures on Emerging Engineering Technologies)
Anbieter: Ria Christie Collections, Uxbridge, Vereinigtes Königreich
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EUR 36,65
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In den WarenkorbZustand: New. In English.
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Low Substrate Temperature Modeling Outlook of Scaled n-MOSFET (Synthesis Lectures on Emerging Engineering Technologies)
Sprache: Englisch
Verlag: Morgan & Claypool Publishers, 2018
ISBN 10: 1681733870 ISBN 13: 9781681733876
Hardcover. Zustand: New. 8vo (24.5 cm), XI, 77 pp. Publisher's laminated boards. Synopsis: This book is the first to illustrate the fact that a single subthreshold slope value which is generally reported in textbook plots and research articles, is erroneous and at lower gate voltage below inversion, subthreshold slope value exhibits a variation tendency on applied gate voltage below threshold, i.e., varying depletion layer and vertical field induced surface band bending variations at the MOSFET channel surface. The author also will critically review the state-of-the art effectiveness of certain device architectures presently prevalent in the semiconductor industry below 45 nm node from the perspectives of device physical analysis at lower substrate temperature operating conditions. The book concludes with an emphasis on modeling simulations, inviting the device professionals to meet the performance bottlenecks emanating from inceptives present at these lower temperatures of operation of today's 10 nm device architectures.
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Low Substrate Temperature Modeling Outlook of Scaled N-mosfet
Anbieter: GreatBookPrices, Columbia, MD, USA
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EUR 49,58
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Low Substrate Temperature Modeling Outlook of Scaled n-MOSFET
Anbieter: Chiron Media, Wallingford, Vereinigtes Königreich
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EUR 35,02
EUR 17,78 shipping
Versand von Vereinigtes Königreich nach USAAnzahl: 10 verfügbar
In den WarenkorbPF. Zustand: New.
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Zustand: New. 1st edition NO-PA16APR2015-KAP.
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Low Substrate Temperature Modeling Outlook of Scaled N-mosfet
Anbieter: GreatBookPricesUK, Woodford Green, Vereinigtes Königreich
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EUR 36,63
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In den WarenkorbZustand: New.
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Parameter-Centric Scaled FET Devices (Hardcover)
Sprache: Englisch
Verlag: Springer International Publishing AG, Cham, 2025
ISBN 10: 3031842855 ISBN 13: 9783031842856
Anbieter: Grand Eagle Retail, Bensenville, IL, USA
Verkäuferbewertung 5 von 5 Sternen
Hardcover. Zustand: new. Hardcover. Parameters that determine the performance of silicon-based Field Effect Transistors (FET) devices in the presence of degenerate doping, often are not modeled properly and so require precise analysis to improve modeling accuracy. The book is focused on the extraction of parameters for silicon-based FET models that critically determine the FET performance at room temperature as well as at very low temperatures. Emphasize is put on analysis that is based on the device physics, especially at low (cryogenic) temperatures. Performance of gate-all-around (GAA) nanowire FETs, and stacked nanosheet complementary FETs (C-FET) are also discussed. Parameters that determine the performance of silicon-based Field Effect Transistors (FET) devices in the presence of degenerate doping, often are not modeled properly and so require precise analysis to improve modeling accuracy. Shipping may be from multiple locations in the US or from the UK, depending on stock availability.
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Low Substrate Temperature Modeling Outlook of Scaled N-mosfet
Anbieter: GreatBookPricesUK, Woodford Green, Vereinigtes Königreich
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EUR 42,88
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In den WarenkorbZustand: As New. Unread book in perfect condition.
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Parameter-centric Scaled Fet Devices: Physics Based Perspectives and Attributes
Anbieter: Revaluation Books, Exeter, Vereinigtes Königreich
Verkäuferbewertung 5 von 5 Sternen
EUR 64,53
EUR 11,48 shipping
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In den WarenkorbHardcover. Zustand: Brand New. 175 pages. 9.45x6.62x9.20 inches. In Stock.
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New Prospects of Integrating Low Substrate Temperatures with Scaling-Sustained Device Architectural Innovation
Sprache: Englisch
Verlag: Springer International Publishing, Springer International Publishing, 2016
ISBN 10: 3031008995 ISBN 13: 9783031008993
Anbieter: AHA-BUCH GmbH, Einbeck, Deutschland
Verkäuferbewertung 5 von 5 Sternen
Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - In order to sustain Moore's Law-based device scaling, principal attention has focused on toward device architectural innovations for improved device performance as per ITRS projections for technology nodes up to 10 nm. Efficient integration of lower substrate temperatures (.
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Low Substrate Temperature Modeling Outlook of Scaled n-MOSFET
Sprache: Englisch
Verlag: Springer International Publishing, Springer International Publishing Jul 2018, 2018
ISBN 10: 3031009061 ISBN 13: 9783031009068
Anbieter: buchversandmimpf2000, Emtmannsberg, BAYE, Deutschland
Verkäuferbewertung 5 von 5 Sternen
Taschenbuch. Zustand: Neu. Neuware -Low substrate/lattice temperature (Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 92 pp. Englisch.
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Low Substrate Temperature Modeling Outlook of Scaled n-MOSFET
Sprache: Englisch
Verlag: Springer International Publishing, 2018
ISBN 10: 3031009061 ISBN 13: 9783031009068
Anbieter: AHA-BUCH GmbH, Einbeck, Deutschland
Verkäuferbewertung 5 von 5 Sternen
Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - Low substrate/lattice temperature (< 300 K) operation of n-MOSFET has been effectively studied by device research and integration professionals in CMOS logic and analog products from the early 1970s. The author of this book previously composed an Elektronisches Buch in this area where he and his co-authors performed original simulation and modeling work on MOSFET threshold voltage and demonstrated that through efficient manipulation of threshold voltage values at lower substrate temperatures, superior degrees of reduction of subthreshold and off-state leakage current can be implemented in high-density logic and microprocessor chips fabricated in a silicon die. In this book, the author explores other device parameters such as channel inversion carrier mobility and its characteristic evolution as temperature on the die varies from 100-300 K. Channel mobility affects both on-state drain current and subthreshold drain current and both drain current behaviors at lower temperatures have been modeled accurately and simulated for a 1 m channel length n-MOSFET. In addition, subthreshold slope which is an indicator of how speedily the device drain current can be switched between near off current and maximum drain current is an important device attribute to model at lower operating substrate temperatures. This book is the first to illustrate the fact that a single subthreshold slope value which is generally reported in textbook plots and research articles, is erroneous and at lower gate voltage below inversion, subthreshold slope value exhibits a variation tendency on applied gate voltage below threshold, i.e., varying depletion layer and vertical field induced surface band bending variations at the MOSFET channel surface. The author also will critically review the state-of-the art effectiveness of certain device architectures presently prevalent in the semiconductor industry below 45 nm node from the perspectives of device physical analysis at lower substrate temperature operating conditions. The book concludes with an emphasis on modeling simulations, inviting the device professionals to meet the performance bottlenecks emanating from inceptives present at these lower temperatures of operation of today's 10 nm device architectures.
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Parameter-Centric Scaled FET Devices : Physics Based Perspectives and Attributes
Sprache: Englisch
Verlag: Springer Nature Switzerland, Springer Nature Switzerland, 2025
ISBN 10: 3031842855 ISBN 13: 9783031842856
Anbieter: AHA-BUCH GmbH, Einbeck, Deutschland
Verkäuferbewertung 5 von 5 Sternen
Buch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - Parameters that determine the performance of silicon-based Field Effect Transistors (FET) devices in the presence of degenerate doping, often are not modeled properly and so require precise analysis to improve modeling accuracy. The book is focused on the extraction of parameters for silicon-based FET models that critically determine the FET performance at room temperature as well as at very low temperatures. Emphasize is put on analysis that is based on the device physics, especially at low (cryogenic) temperatures. Performance of gate-all-around (GAA) nanowire FETs, and stacked nanosheet complementary FETs (C-FET) are also discussed.
-
New Prospects of Integrating Low Substrate Temperatures with Scaling-Sustained Device Architectural Innovation (Synthesis Lectures on Emerging Engineering Technologies)
Anbieter: Majestic Books, Hounslow, Vereinigtes Königreich
Verkäuferbewertung 4 von 5 Sternen
EUR 39,95
EUR 7,46 shipping
Versand von Vereinigtes Königreich nach USAAnzahl: 4 verfügbar
In den WarenkorbZustand: New. Print on Demand.
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New Prospects of Integrating Low Substrate Temperatures with Scaling-Sustained Device Architectural Innovation (Synthesis Lectures on Emerging Engineering Technologies)
Anbieter: Biblios, Frankfurt am main, HESSE, Deutschland
Verkäuferbewertung 4 von 5 Sternen
Zustand: New. PRINT ON DEMAND.
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New Prospects of Integrating Low Substrate Temperatures with Scaling-Sustained Device Architectural Innovation
Sprache: Englisch
Verlag: Springer International Publishing Feb 2016, 2016
ISBN 10: 3031008995 ISBN 13: 9783031008993
Anbieter: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Deutschland
Verkäuferbewertung 5 von 5 Sternen
Taschenbuch. Zustand: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -In order to sustain Moore's Law-based device scaling, principal attention has focused on toward device architectural innovations for improved device performance as per ITRS projections for technology nodes up to 10 nm. Efficient integration of lower substrate temperatures ( 84 pp. Englisch.
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Low Substrate Temperature Modeling Outlook of Scaled n-MOSFET (Synthesis Lectures on Emerging Engineering Technologies)
Anbieter: Majestic Books, Hounslow, Vereinigtes Königreich
Verkäuferbewertung 4 von 5 Sternen
EUR 47,35
EUR 7,46 shipping
Versand von Vereinigtes Königreich nach USAAnzahl: 4 verfügbar
In den WarenkorbZustand: New. Print on Demand.
-
Low Substrate Temperature Modeling Outlook of Scaled n-MOSFET
Sprache: Englisch
Verlag: Springer International Publishing Jul 2018, 2018
ISBN 10: 3031009061 ISBN 13: 9783031009068
Anbieter: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Deutschland
Verkäuferbewertung 5 von 5 Sternen
Taschenbuch. Zustand: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Low substrate/lattice temperature (< 300 K) operation of n-MOSFET has been effectively studied by device research and integration professionals in CMOS logic and analog products from the early 1970s. The author of this book previously composed an Elektronisches Buch in this area where he and his co-authors performed original simulation and modeling work on MOSFET threshold voltage and demonstrated that through efficient manipulation of threshold voltage values at lower substrate temperatures, superior degrees of reduction of subthreshold and off-state leakage current can be implemented in high-density logic and microprocessor chips fabricated in a silicon die. In this book, the author explores other device parameters such as channel inversion carrier mobility and its characteristic evolution as temperature on the die varies from 100-300 K. Channel mobility affects both on-state drain current and subthreshold drain current and both drain current behaviors at lower temperatures have been modeled accurately and simulated for a 1 m channel length n-MOSFET. In addition, subthreshold slope which is an indicator of how speedily the device drain current can be switched between near off current and maximum drain current is an important device attribute to model at lower operating substrate temperatures. This book is the first to illustrate the fact that a single subthreshold slope value which is generally reported in textbook plots and research articles, is erroneous and at lower gate voltage below inversion, subthreshold slope value exhibits a variation tendency on applied gate voltage below threshold, i.e., varying depletion layer and vertical field induced surface band bending variations at the MOSFET channel surface. The author also will critically review the state-of-the art effectiveness of certain device architectures presently prevalent in the semiconductor industry below 45 nm node from the perspectives of device physical analysis at lower substrate temperature operating conditions. The book concludes with an emphasis on modeling simulations, inviting the device professionals to meet the performance bottlenecks emanating from inceptives present at these lower temperatures of operation of today's 10 nm device architectures. 92 pp. Englisch.
-
Low Substrate Temperature Modeling Outlook of Scaled n-MOSFET (Synthesis Lectures on Emerging Engineering Technologies)
Anbieter: Biblios, Frankfurt am main, HESSE, Deutschland
Verkäuferbewertung 4 von 5 Sternen
Zustand: New. PRINT ON DEMAND.
-
Parameter-Centric Scaled FET Devices: Physics Based Perspectives and Attributes
Anbieter: Majestic Books, Hounslow, Vereinigtes Königreich
Verkäuferbewertung 4 von 5 Sternen
EUR 58,77
EUR 7,46 shipping
Versand von Vereinigtes Königreich nach USAAnzahl: 4 verfügbar
In den WarenkorbZustand: New. Print on Demand.
-
Parameter-Centric Scaled FET Devices
Sprache: Englisch
Verlag: Springer Nature Switzerland, Springer International Publishing Mär 2025, 2025
ISBN 10: 3031842855 ISBN 13: 9783031842856
Anbieter: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Deutschland
Verkäuferbewertung 5 von 5 Sternen
Buch. Zustand: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Parameters that determine the performance of silicon-based Field Effect Transistors (FET) devices in the presence of degenerate doping, often are not modeled properly and so require precise analysis to improve modeling accuracy. The book is focused on the extraction of parameters for silicon-based FET models that critically determine the FET performance at room temperature as well as at very low temperatures. Emphasize is put on analysis that is based on the device physics, especially at low (cryogenic) temperatures. Performance of gate-all-around (GAA) nanowire FETs, and stacked nanosheet complementary FETs (C-FET) are also discussed. 152 pp. Englisch.
