Zustand: Buone. italiano Condizioni dell'esterno: Discrete con difetti, macchie Condizioni dell'interno: Discrete con Difetti, macchie.
Sprache: Englisch
Verlag: LAP LAMBERT Academic Publishing, 2012
ISBN 10: 3848492741 ISBN 13: 9783848492749
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Sprache: Englisch
Verlag: LAP Lambert Academic Publishing, 2012
ISBN 10: 3848492741 ISBN 13: 9783848492749
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Taschenbuch. Zustand: Neu. Compact modeling of spintronic devices | A physical description of spin-based transistors for electronic applications | Massimo Spina | Taschenbuch | Englisch | LAP Lambert Academic Publishing | EAN 9783848492749 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter: preigu.
Verlag: Pietrasanta: Comune di Pietrasanta,, 2010
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Sprache: Englisch
Verlag: LAP LAMBERT Academic Publishing, 2012
ISBN 10: 3848492741 ISBN 13: 9783848492749
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Sprache: Englisch
Verlag: J Paul Getty Museum Pubns, 2023
ISBN 10: 1606068903 ISBN 13: 9781606068908
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In den WarenkorbHardback. Zustand: New. Illustrated - Bilingual.
Sprache: Englisch
Verlag: LAP Lambert Academic Publishing, 2012
ISBN 10: 3848492741 ISBN 13: 9783848492749
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Taschenbuch. Zustand: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - Spintronics is an area of electronics that studies the design of electronic devices based on the spin properties of electrons, taking advantage of their full potential. To date, despite the extended theoretical work done on this class of components, models are mainly physical and, due to their extreme complexity, cannot be implemented in circuit simulators. The aim of this work is to address the critical problems of modeling spintronic devices in a compact form. The main goal is to make a bridge between a purely physical description and a more electrical counterpart of spintronic elements in order to enable their use in Computer Assisted Design tools, just as for CMOS devices. The first part of the book gives an introduction to the different kinds of spin-orbit interactions, the materials used for realizing spintronic devices and the main spin-based devices currently developed. The second part is then dedicated to the modeling of simple transistor structures where the current depends on spin-polarized carriers. Moreover, a brief outlook on possible future spintronic devices is given.