Sprache: Englisch
Verlag: Cambridge University Press, 1996
ISBN 10: 0521024455 ISBN 13: 9780521024457
Anbieter: Antiquariat Thomas Haker GmbH & Co. KG, Berlin, Deutschland
Verbandsmitglied: GIAQ
Softcover/Paperback. Zustand: Sehr gut. x, 217 p. Very good. Shrink wrapped. / Sehr guter Zustand. In Folie verschweißt. Sprache: Englisch Gewicht in Gramm: 371.
Sprache: Englisch
Verlag: Cambridge University Press, 2006
ISBN 10: 0521024455 ISBN 13: 9780521024457
Anbieter: Labyrinth Books, Princeton, NJ, USA
Zustand: Very Good.
Sprache: Englisch
Verlag: Cambridge University Press, 2006
ISBN 10: 0521024455 ISBN 13: 9780521024457
Anbieter: Phatpocket Limited, Waltham Abbey, HERTS, Vereinigtes Königreich
EUR 32,01
Anzahl: 1 verfügbar
In den WarenkorbZustand: Good. Used - Good. Your purchase helps support Sri Lankan Children's Charity 'The Rainbow Centre.' Ex-library, but has been well cared for. Our donations to The Rainbow Centre have helped provide an education and a safe haven to hundreds of children who live in appalling conditions.
Sprache: Englisch
Verlag: Cambridge University Press, 2006
ISBN 10: 0521024455 ISBN 13: 9780521024457
Anbieter: California Books, Miami, FL, USA
Zustand: New.
Sprache: Englisch
Verlag: Cambridge University Press, 2006
ISBN 10: 0521024455 ISBN 13: 9780521024457
Anbieter: Ria Christie Collections, Uxbridge, Vereinigtes Königreich
EUR 68,85
Anzahl: Mehr als 20 verfügbar
In den WarenkorbZustand: New. In.
Sprache: Englisch
Verlag: Cambridge University Press 2008-08-21, 2008
ISBN 10: 0521024455 ISBN 13: 9780521024457
Anbieter: Chiron Media, Wallingford, Vereinigtes Königreich
EUR 68,95
Anzahl: Mehr als 20 verfügbar
In den WarenkorbPaperback. Zustand: New.
Sprache: Englisch
Verlag: Cambridge University Press, 2008
ISBN 10: 0521024455 ISBN 13: 9780521024457
Anbieter: Kennys Bookshop and Art Galleries Ltd., Galway, GY, Irland
Erstausgabe
EUR 76,34
Anzahl: Mehr als 20 verfügbar
In den WarenkorbZustand: New. A thorough review of the properties of deep-level, localized defects in semiconductors. Series Editor(s): Ahmad, Haroon; Pepper, Michael; Broers, Alec. Series: Cambridge Studies in Semiconductor Physics & Microelectronic Engineering. Num Pages: 232 pages, 106 b/w illus. BIC Classification: PHK; TJFD5. Category: (P) Professional & Vocational. Dimension: 229 x 152 x 13. Weight in Grams: 350. . 2008. 1st Edition. paperback. . . . .
Sprache: Englisch
Verlag: Cambridge University Press, 2006
ISBN 10: 0521024455 ISBN 13: 9780521024457
Anbieter: Kennys Bookstore, Olney, MD, USA
Zustand: New. A thorough review of the properties of deep-level, localized defects in semiconductors. Series Editor(s): Ahmad, Haroon; Pepper, Michael; Broers, Alec. Series: Cambridge Studies in Semiconductor Physics & Microelectronic Engineering. Num Pages: 232 pages, 106 b/w illus. BIC Classification: PHK; TJFD5. Category: (P) Professional & Vocational. Dimension: 229 x 152 x 13. Weight in Grams: 350. . 2008. 1st Edition. paperback. . . . . Books ship from the US and Ireland.
Sprache: Englisch
Verlag: Cambridge University Press, 2006
ISBN 10: 0521024455 ISBN 13: 9780521024457
Anbieter: AHA-BUCH GmbH, Einbeck, Deutschland
Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - This is the first book to give a complete overview of the properties of deep-level, localized defects in semiconductors. Such comparatively long-lived (or metastable) defects exhibit complex interactions with the surrounding material, and can significantly affect the performance and stability of certain semiconductor devices. After an introductory discussion of metastable defects, the properties of DX and EL2 centres in III-V compounds are presented. Additional crystalline materials are also dealt with, before a detailed description is given of the properties and kinetics of photo-induced defects in amorphous semiconductors. The book closes with an examination of the effects of photo-induced defects in a range of practical applications. Throughout, unifying concepts and models are stressed, and the book will be of great use to graduate students and researchers interested in the physics and materials science of semiconductors.
Anbieter: Revaluation Books, Exeter, Vereinigtes Königreich
EUR 65,54
Anzahl: 1 verfügbar
In den WarenkorbPaperback. Zustand: Brand New. 1st edition. 217 pages. 8.75x6.00x0.50 inches. In Stock. This item is printed on demand.
Sprache: Englisch
Verlag: Cambridge University Press, 2006
ISBN 10: 0521024455 ISBN 13: 9780521024457
Anbieter: Majestic Books, Hounslow, Vereinigtes Königreich
EUR 79,11
Anzahl: 4 verfügbar
In den WarenkorbZustand: New. Print on Demand pp. 232 2:B&W 6 x 9 in or 229 x 152 mm Perfect Bound on Creme w/Gloss Lam.
Sprache: Englisch
Verlag: Cambridge University Press CUP, 2006
ISBN 10: 0521024455 ISBN 13: 9780521024457
Anbieter: Books Puddle, New York, NY, USA
Zustand: New. Print on Demand pp. 232.
Sprache: Englisch
Verlag: Cambridge University Press, 2006
ISBN 10: 0521024455 ISBN 13: 9780521024457
Anbieter: THE SAINT BOOKSTORE, Southport, Vereinigtes Königreich
EUR 72,75
Anzahl: Mehr als 20 verfügbar
In den WarenkorbPaperback / softback. Zustand: New. This item is printed on demand. New copy - Usually dispatched within 5-9 working days.
Sprache: Englisch
Verlag: Cambridge University Press, 2006
ISBN 10: 0521024455 ISBN 13: 9780521024457
Anbieter: Biblios, Frankfurt am main, HESSE, Deutschland
Zustand: New. PRINT ON DEMAND pp. 232.
Sprache: Englisch
Verlag: Cambridge University Press, Cambridge, 2006
ISBN 10: 0521024455 ISBN 13: 9780521024457
Anbieter: CitiRetail, Stevenage, Vereinigtes Königreich
Erstausgabe Print-on-Demand
EUR 79,17
Anzahl: 1 verfügbar
In den WarenkorbPaperback. Zustand: new. Paperback. This is the first book to give a complete overview of the properties of deep-level, localized defects in semiconductors. Such comparatively long-lived (or metastable) defects exhibit complex interactions with the surrounding material, and can significantly affect the performance and stability of certain semiconductor devices. After an introductory discussion of metastable defects, the properties of DX and EL2 centres in IIIV compounds are presented. Additional crystalline materials are also dealt with, before a detailed description is given of the properties and kinetics of photo-induced defects in amorphous semiconductors. The book closes with an examination of the effects of photo-induced defects in a range of practical applications. Throughout, unifying concepts and models are stressed, and the book will be of great use to graduate students and researchers interested in the physics and materials science of semiconductors. This is the first book to give a complete overview of the properties of deep-level, localized defects in semiconductors. These metastable defects exhibit complex interactions with the surrounding material, and can significantly affect the performance and stability of certain semiconductor devices. This item is printed on demand. Shipping may be from our UK warehouse or from our Australian or US warehouses, depending on stock availability.
Sprache: Englisch
Verlag: Cambridge University Press, 2006
ISBN 10: 0521024455 ISBN 13: 9780521024457
Anbieter: moluna, Greven, Deutschland
EUR 74,93
Anzahl: Mehr als 20 verfügbar
In den WarenkorbZustand: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. This is the first book to give a complete overview of the properties of deep-level, localized defects in semiconductors. These metastable defects exhibit complex interactions with the surrounding material, and can significantly affect the performance and st.