Isbn: 9786139858248 - stress induced voiding & electromigration analysis of cu-cu bonds (8 Ergebnisse)

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Taschenbuch. Zustand: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Face to Face Stacking on Wafer to Wafer (WoW) can be done for the Cu-Cu direct bonding interconnects. A good mechanical strength to sustain shear force during thinning can be achieved by Cu bonding. While making reliable interconnect structures has been a persistent challenge. Stress results from material deposition, thermal expansion mismatch, and electromigration. Material deposition inevitably generates stress. Materials in interconnect structures, selected to function as conductors, dielectrics, or barriers, have dissimilar thermal expansion coefficients. The driving force comes from the stress built up due to grain growth and the thermal expansion mismatch (CTE) between Cu interconnect and dielectrics. The void space is then created in order to release the resulting stress. Also the electromigration phenomena caused due to current stressing and creates a void. So in this project, I worked on Stress Induced Voiding and Electromigration of Cu-Cu direct bonding sample with bonding temperature of 300C. 60 pp. Englisch.…

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Taschenbuch. Zustand: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - Face to Face Stacking on Wafer to Wafer (WoW) can be done for the Cu-Cu direct bonding interconnects. A good mechanical strength to sustain shear force during thinning can be achieved by Cu bonding. While making reliable interconnect structures has been a persistent challenge. Stress results from material deposition, thermal expansion mismatch, and electromigration. Material deposition inevitably generates stress. Materials in interconnect structures, selected to function as conductors, dielectrics, or barriers, have dissimilar thermal expansion coefficients. The driving force comes from the stress built up due to grain growth and the thermal expansion mismatch (CTE) between Cu interconnect and dielectrics. The void space is then created in order to release the resulting stress. Also the electromigration phenomena caused due to current stressing and creates a void. So in this project, I worked on Stress Induced Voiding and Electromigration of Cu-Cu direct bonding sample with bonding temperature of 300C.…

Zustand: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Singh Dr. HarjinderDr. Harjinder Singh is Assistant Professor in department of electronics and communication at Punjabi University Patiala.Face to Face Stacking on Wafer to Wafer (WoW) can be done for the Cu-Cu direct bonding int.…

Taschenbuch. Zustand: Neu. This item is printed on demand - Print on Demand Titel. Neuware -Face to Face Stacking on Wafer to Wafer (WoW) can be done for the Cu-Cu direct bonding interconnects. A good mechanical strength to sustain shear force during thinning can be achieved by Cu bonding. While making reliable interconnect structures has been a persistent challenge. Stress results from material deposition, thermal expansion mismatch, and electromigration. Material deposition inevitably generates stress. Materials in interconnect structures, selected to function as conductors, dielectrics, or barriers, have dissimilar thermal expansion coefficients. The driving force comes from the stress built up due to grain growth and the thermal expansion mismatch (CTE) between Cu interconnect and dielectrics. The void space is then created in order to release the resulting stress. Also the electromigration phenomena caused due to current stressing and creates a void. So in this project, I worked on Stress Induced Voiding and Electromigration of Cu-Cu direct bonding sample with bonding temperature of 300C.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 60 pp. Englisch.…