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In den WarenkorbHardcover. Zustand: Used: Very Good. Inkl. Rechnung nach §19; Buch stammt aus aufgelà ster Buchsammlung; Label, Stempel und Notizen mà glich.
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In den WarenkorbHardcover. Zustand: Very Good. Book is in very good plus condition, with crisp unmarked pages, tight binding, Light overall wear, a couple of smudges to front cover. Otherwise, a nice sturdy copy.
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In den WarenkorbTaschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - Device simulation has two main purposes: to understand and depict the physical processes in the interior of a device, and to make reliable predictions of the behavior of an anticipated new device generation. Towards these goals the quality of the physical models is decisive. The introductory chapter of this book contains a critical review on models for silicon device simulators, which rely on moments of the Boltzmann equation. With reference to fundamental experimental and theoretical work an extensive collection of widely used models is discussed in terms of physical accuracy and application results. This review shows that the quality and efficiency of the phys ical models, which have been developed for the purpose of numerical simulation over the last three decades, is sufficient for many applications. Nevertheless, the basic understanding of the microscopic processes, as well as the uniqueness and accuracy of the models are still unsatisfactory. Hence, the following chapters of the book deal with the derivation of physics-based models from a microscopic level, also using new approaches of 'taylored quantum-mechanics'. Each model is compared with experimental data and applied to a number of simulation exam ples. The problems when starting from 'first principles' and making the models suitable for a device simulator will also be demonstrated. We will show that demands for rapid computation and numerical robustness require a compromise between physical soundness and analytical simplicity, and that the attainable accuracy is limited by the complexity of the problems.
Verlag: Springer Vienna, Springer Vienna Okt 2012, 2012
ISBN 10: 3709173345 ISBN 13: 9783709173343
Sprache: Englisch
Anbieter: buchversandmimpf2000, Emtmannsberg, BAYE, Deutschland
EUR 160,49
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In den WarenkorbTaschenbuch. Zustand: Neu. Neuware -Device simulation has two main purposes: to understand and depict the physical processes in the interior of a device, and to make reliable predictions of the behavior of an anticipated new device generation. Towards these goals the quality of the physical models is decisive. The introductory chapter of this book contains a critical review on models for silicon device simulators, which rely on moments of the Boltzmann equation. With reference to fundamental experimental and theoretical work an extensive collection of widely used models is discussed in terms of physical accuracy and application results. This review shows that the quality and efficiency of the phys ical models, which have been developed for the purpose of numerical simulation over the last three decades, is sufficient for many applications. Nevertheless, the basic understanding of the microscopic processes, as well as the uniqueness and accuracy of the models are still unsatisfactory. Hence, the following chapters of the book deal with the derivation of physics-based models from a microscopic level, also using new approaches of 'taylored quantum-mechanics'. Each model is compared with experimental data and applied to a number of simulation exam ples. The problems when starting from 'first principles' and making the models suitable for a device simulator will also be demonstrated. We will show that demands for rapid computation and numerical robustness require a compromise between physical soundness and analytical simplicity, and that the attainable accuracy is limited by the complexity of the problems.Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 376 pp. Englisch.
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In den WarenkorbZustand: New. In.
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In den WarenkorbZustand: New. In.
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In den WarenkorbGebunden. Zustand: New. Excellent overview about the most widely used modelsDiscussion of accuracy and application resultsComparison of theory and experimental dataFrom the reviews: . this is a well produced book, written in a easy to read style, and will also be.
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In den WarenkorbZustand: New. pp. 376.
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In den WarenkorbZustand: New.
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In den WarenkorbZustand: New.
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In den WarenkorbPaperback. Zustand: Brand New. 367 pages. 9.61x6.69x0.85 inches. In Stock.
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In den WarenkorbHardcover. Zustand: Brand New. 1st edition. 348 pages. 9.75x7.00x0.75 inches. In Stock.
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In den WarenkorbPaperback. Zustand: Like New. Like New. book.
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In den WarenkorbZustand: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Excellent overview about the most widely used modelsDiscussion of accuracy and application resultsComparison of theory and experimental dataFrom the reviews: . this is a well produced book, written in a easy to read style, and will also be.
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In den WarenkorbTaschenbuch. Zustand: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -From the reviews: '. this is a well produced book, written in a easy to read style, and will also be a very useful primer for someone starting out the field [.], and a useful source of reference for experienced users .' Microelectronics Journal 376 pp. Englisch.
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In den WarenkorbZustand: New. Print on Demand pp. 376 52:B&W 6.14 x 9.21in or 234 x 156mm (Royal 8vo) Case Laminate on White w/Gloss Lam.
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In den WarenkorbZustand: New. PRINT ON DEMAND pp. 376.