Sprache: Englisch
Verlag: World Scientific Publishing Company, 2007
ISBN 10: 9813203307 ISBN 13: 9789813203303
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Sprache: Englisch
Verlag: World Scientific Publishing Co Pte Ltd, SG, 2007
ISBN 10: 9813203307 ISBN 13: 9789813203303
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In den WarenkorbPaperback. Zustand: New. A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was the most cited among similar books in the area and remains the most frequently cited today. The coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor modeling. This is also the only book that discusses in detail how to measure device model parameters required for circuit simulations.The book deals with the MOS Field Effect Transistor (MOSFET) models that are derived from basic semiconductor theory. Various models are developed, ranging from simple to more sophisticated models that take into account new physical effects observed in submicron transistors used in today's (1993) MOS VLSI technology. The assumptions used to arrive at the models are emphasized so that the accuracy of the models in describing the device characteristics are clearly understood. Due to the importance of designing reliable circuits, device reliability models are also covered. Understanding these models is essential when designing circuits for state-of-the-art MOS ICs.
Sprache: Englisch
Verlag: World Scientific Publishing Co Pte Ltd, 2007
ISBN 10: 9813203307 ISBN 13: 9789813203303
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PAP. Zustand: New. New Book. Shipped from UK. Established seller since 2000.
Sprache: Englisch
Verlag: World Scientific Publishing Company, 2007
ISBN 10: 9813203307 ISBN 13: 9789813203303
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Sprache: Englisch
Verlag: World Scientific Publishing Co Pte Ltd, 2007
ISBN 10: 9813203307 ISBN 13: 9789813203303
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In den WarenkorbPAP. Zustand: New. New Book. Shipped from UK. Established seller since 2000.
Sprache: Englisch
Verlag: World Scientific Publishing Co Pte Ltd, SG, 2007
ISBN 10: 9813203307 ISBN 13: 9789813203303
Anbieter: Rarewaves USA, OSWEGO, IL, USA
Paperback. Zustand: New. A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was the most cited among similar books in the area and remains the most frequently cited today. The coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor modeling. This is also the only book that discusses in detail how to measure device model parameters required for circuit simulations.The book deals with the MOS Field Effect Transistor (MOSFET) models that are derived from basic semiconductor theory. Various models are developed, ranging from simple to more sophisticated models that take into account new physical effects observed in submicron transistors used in today's (1993) MOS VLSI technology. The assumptions used to arrive at the models are emphasized so that the accuracy of the models in describing the device characteristics are clearly understood. Due to the importance of designing reliable circuits, device reliability models are also covered. Understanding these models is essential when designing circuits for state-of-the-art MOS ICs.
Sprache: Englisch
Verlag: World Scientific Publishing Co Pte Ltd, Singapore, 2007
ISBN 10: 9813203307 ISBN 13: 9789813203303
Anbieter: Grand Eagle Retail, Bensenville, IL, USA
Paperback. Zustand: new. Paperback. A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was the most cited among similar books in the area and remains the most frequently cited today. The coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor modeling. This is also the only book that discusses in detail how to measure device model parameters required for circuit simulations.The book deals with the MOS Field Effect Transistor (MOSFET) models that are derived from basic semiconductor theory. Various models are developed, ranging from simple to more sophisticated models that take into account new physical effects observed in submicron transistors used in today's (1993) MOS VLSI technology. The assumptions used to arrive at the models are emphasized so that the accuracy of the models in describing the device characteristics are clearly understood. Due to the importance of designing reliable circuits, device reliability models are also covered. Understanding these models is essential when designing circuits for state-of-the-art MOS ICs. Shipping may be from multiple locations in the US or from the UK, depending on stock availability.
Sprache: Englisch
Verlag: World Scientific Publishing Company, 2007
ISBN 10: 9813203307 ISBN 13: 9789813203303
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Sprache: Englisch
Verlag: World Scientific Pub Co Inc, 2023
ISBN 10: 9811260176 ISBN 13: 9789811260179
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Sprache: Englisch
Verlag: World Scientific Pub Co Inc, 2023
ISBN 10: 9811260176 ISBN 13: 9789811260179
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Sprache: Englisch
Verlag: World Scientific Publishing Company, 2007
ISBN 10: 9813203307 ISBN 13: 9789813203303
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ISBN 10: 9811260176 ISBN 13: 9789811260179
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Verlag: World Scientific Pub Co Inc, 2023
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ISBN 10: 9811260176 ISBN 13: 9789811260179
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ISBN 10: 9811260176 ISBN 13: 9789811260179
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Sprache: Englisch
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ISBN 10: 9813203307 ISBN 13: 9789813203303
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In den WarenkorbPaperback. Zustand: Brand New. reprint edition. 632 pages. 9.02x6.22x1.30 inches. In Stock.
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Sprache: Englisch
Verlag: World Scientific Pub Co Inc, 2007
ISBN 10: 981256862X ISBN 13: 9789812568625
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